JPS6191972A - Solar battery - Google Patents
Solar batteryInfo
- Publication number
- JPS6191972A JPS6191972A JP59213798A JP21379884A JPS6191972A JP S6191972 A JPS6191972 A JP S6191972A JP 59213798 A JP59213798 A JP 59213798A JP 21379884 A JP21379884 A JP 21379884A JP S6191972 A JPS6191972 A JP S6191972A
- Authority
- JP
- Japan
- Prior art keywords
- type
- film
- tio2
- junction
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000758 substrate Substances 0.000 claims abstract description 19
- 239000004065 semiconductor Substances 0.000 claims abstract description 17
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 16
- 239000010703 silicon Substances 0.000 claims abstract description 16
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 abstract description 31
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 15
- 238000000034 method Methods 0.000 abstract description 7
- 238000006243 chemical reaction Methods 0.000 abstract description 6
- 239000012535 impurity Substances 0.000 abstract description 4
- 125000005842 heteroatom Chemical group 0.000 abstract 1
- 239000011810 insulating material Substances 0.000 abstract 1
- 238000010438 heat treatment Methods 0.000 description 4
- 239000001257 hydrogen Substances 0.000 description 3
- 229910052739 hydrogen Inorganic materials 0.000 description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 150000002894 organic compounds Chemical class 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 230000002195 synergetic effect Effects 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/078—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers including different types of potential barriers provided for in two or more of groups H01L31/062 - H01L31/075
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Sustainable Energy (AREA)
- Photovoltaic Devices (AREA)
Abstract
Description
【発明の詳細な説明】
く技術分野〉
本発明は太陽電池に関し、特にエネルギの変換効率の向
上を図った太陽電池に関するものである。DETAILED DESCRIPTION OF THE INVENTION Technical Field The present invention relates to a solar cell, and particularly to a solar cell with improved energy conversion efficiency.
〈従来技術〉
光エネルギを電気エネルギに変換する半導体装置として
太陽電池が広く用いられている。従来から用いられてい
る太陽電池は、第４図に示す如く、例えばｐ型シリコン
基板１の一生表面にｎ型不純物を拡散してＰＮ接合２を
形成し、ｐ型層１及びｎ型層３には発生した電力を取り
出すだめの裏面電極４及び表面電極５が夫々作製←呼伜
÷されている。尚表面電極５が作製された受光面側は、
照射された光の利用率を高めるために反射防止膜６で被
われている。<Prior Art> Solar cells are widely used as semiconductor devices that convert light energy into electrical energy. As shown in FIG. 4, conventionally used solar cells are made by, for example, diffusing n-type impurities into the surface of a p-type silicon substrate 1 to form a PN junction 2, and forming a p-type layer 1 and an n-type layer 3. In the figure, a back electrode 4 and a front electrode 5 for extracting the generated electric power are prepared respectively. The light-receiving surface side where the surface electrode 5 is made is as follows.
It is covered with an anti-reflection film 6 to increase the utilization rate of the irradiated light.
処で反射防止膜６は一般にＴ ｉ０２膜が用いられてい
るが、該Ｔ ｉｏｚ膜は絶縁膜として形成され、単に反
射防止機能と表面保穫機能が期待されているだけに過ぎ
ず、有効利用が図られているとはいい難かった。Generally, the antireflection film 6 is a Ti02 film, but the Tioz film is formed as an insulating film and is only expected to have an antireflection function and a surface protection function, so it cannot be used effectively. It was difficult to say that this was planned.
〈発明の目的〉
本発明は上記従来の太陽電池の欠点を除去し、Ｔｉ（ｈ
膜を改良してより変換効率の高い太陽電池を提供するも
ので、受光面を被うＴｉＯ２膜を還元処理してｎ型化し
、シリ−コン半導体基板本体との間にヘテロ接合を形成
し、短波長光の吸収率を高める。<Object of the invention> The present invention eliminates the drawbacks of the conventional solar cells and
This method improves the film to provide a solar cell with higher conversion efficiency.The TiO2 film covering the light-receiving surface is reduced to become n-type, and a heterojunction is formed between it and the silicon semiconductor substrate body. Increases the absorption rate of short wavelength light.
〈実施例〉
第１図は本発明による一実施例を示す太陽電池の断面図
である。図において、従来装置と同様にｐ型シリコン基
板１の一主表面はｎ型不純物が拡散されてＰＮ接合２が
形成されている。ｐ型シリコン基板１は続いて拡散され
たｎｕ層３の表面を被ってｎ型ＴｉＯ２膜７が形成され
る。該ｎ型ＴｉＯ２膜７は、電気的絶縁性の膜として形
成されたＴｉ０ｚをｎ型に半導体化することによって作
製される。<Example> FIG. 1 is a sectional view of a solar cell showing an example according to the present invention. In the figure, as in the conventional device, n-type impurities are diffused into one main surface of a p-type silicon substrate 1 to form a PN junction 2. Next, an n-type TiO2 film 7 is formed on the p-type silicon substrate 1, covering the surface of the diffused nu layer 3. The n-type TiO2 film 7 is produced by converting Ti0z, which is formed as an electrically insulating film, into an n-type semiconductor.
即ちＰＮ接合２が形成されたシリコン半導体基板１を加
熱し、該加熱保持されたｎ型層３０表面に、ｆタン酸イ
ソプロピル等のチタン化合物をソースとしてＣＶＤによ
りまず絶縁性のＴｉ（ｈ膜７を形成する。That is, the silicon semiconductor substrate 1 on which the PN junction 2 has been formed is heated, and an insulating Ti (h film 7 form.
上記ｎ型シリコン基板３の表面に積層される電気的絶縁
性のＴｉＯ２膜７の作製方法としては、上述の如（ＣＶ
Ｄ法による他、Ｔｉを含む有機化合物溶液を塗布して化
学反応によりＴｉＯ２膜を作製する方法、或いは蒸着法
を利用することができる。The method for producing the electrically insulating TiO2 film 7 to be laminated on the surface of the n-type silicon substrate 3 is as described above (CV
In addition to method D, a method of applying an organic compound solution containing Ti and producing a TiO2 film through a chemical reaction, or a vapor deposition method can be used.
上記シリコン基板表面に積層されたＴ ｉ（ｈ膜をｎ型
半導体に変換する処理は、ＣＶＤによって形成さハ′た
Ｔ’ｉＣｈ膜７を還元処理することによって絶縁性から
半導体に変換される。該還元処理としては、真空中での
熱処理（約７００℃）、減圧水素中下での熱処理（約Ｉ
Ｔｏｒｒ ＋約７００℃）、常圧水素中での熱処理、
或いは水素プ２ズマ中での熱処理（約Ｉ Ｔｏｒｒ ｗ
約４００℃）等を施こすことができ、該還元処理によっ
てＴｉＯ２膜中の酸素が抜−けて空格子点となり、絶縁
性Ｔｉ（ｈ膜がｎ型ＴｉＯ２半導体層に変換される。そ
の結果ｎ＋７９３７層３との間にｎ−ＴｉＯ２／ｎ−３
ｔのへテロ接合が形成される。In the process of converting the Ti(h film laminated on the surface of the silicon substrate) into an n-type semiconductor, the T'iCh film 7 formed by CVD is reduced from an insulating property to a semiconductor. The reduction treatment includes heat treatment in vacuum (approximately 700°C), heat treatment in reduced pressure hydrogen (approximately I
Torr + about 700°C), heat treatment in normal pressure hydrogen,
Alternatively, heat treatment in a hydrogen plasma (about I Torr w
By this reduction treatment, the oxygen in the TiO2 film is removed and becomes a vacancy, and the insulating Ti (h film is converted to an n-type TiO2 semiconductor layer. As a result, n-TiO2/n-3 between n+7937 layer 3
A t heterojunction is formed.
上記変換されたｎ型Ｔｉ（ｈ層７′の表面に受光面側電
極８が例えば格子状に形成され、ｐ型シリコン基板ｌ側
に形成された裏面電極４との間で発生した電力が取り出
される。A light-receiving surface side electrode 8 is formed, for example, in a grid shape on the surface of the converted n-type Ti (h layer 7'), and the power generated between it and the back surface electrode 4 formed on the p-type silicon substrate l side is extracted. It will be done.
上記構造の太陽電池において、入射した光エネルギはｎ
−Ｔｉ０ｚ／ｎ＋ｐ−８ｉのへテロ接合でも光電流を発
生し、従来のシリコン基板におけるｎ＋ｐ接合のみで光
電流を発生させていた構造に比べて光出力電流は大きく
なる。即ち第２図を用いて模型的に示す如く、ｎ−Ｔｉ
０ｚのバンドギャップは３．２０ｅＶを示し、第・３図
の従来の素子構造に示すシリコンのバンドギャップ１．
１０６ｅＶに比べて非常に大きな値をもち、シリコン基
板に対して感度の小さかった短波長光を有効にオリ用す
ることができ、短絡光電流の増大を図り得る。In the solar cell with the above structure, the incident light energy is n
A photocurrent is also generated at the -Ti0z/n+p-8i heterojunction, and the optical output current is larger than that of a conventional structure in which a photocurrent is generated only at an n+p junction in a silicon substrate. That is, as shown schematically in FIG. 2, n-Ti
The band gap of 0z is 3.20 eV, which is the band gap of silicon shown in the conventional device structure of FIG.
Short wavelength light, which has a much larger value than 106 eV and has low sensitivity to silicon substrates, can be effectively used, and the short-circuit photocurrent can be increased.
またＴ ｉｏ２膜はｎ型半導体に変換されることにより
、負電荷を帯びて導電性が良好となシ、面抵抗が減少し
て電流−電圧曲線における曲率因子が著しく向上する。Furthermore, by being converted into an n-type semiconductor, the Tio2 film is negatively charged and has good conductivity, and its sheet resistance is reduced and the curvature factor in the current-voltage curve is significantly improved.
尚ＴｉＯ２膜は上述の如くヘテロ接合のための半導体層
として機能すると共に、本来の反射防止膜としての機能
を果しているつ
上記実施例は半導体基板としてシリコン基板をＺｎＳ、
＊ Ｚｎ５ｅ Ｌ Ｇｅ ｒ ＧａＰ等を用いた太陽電
池に対して、受光面側に上記実施例と同様にｎ型ＴｉＯ
２膜を被着することにより、ヘテロ接合が付加された高
光電変換効率の太陽電池とな名。Note that the TiO2 film functions as a semiconductor layer for the heterojunction as described above, and also functions as an original antireflection film.
* For solar cells using Zn5e L Ger GaP etc., n-type TiO is placed on the light-receiving surface side as in the above example.
A solar cell with high photoelectric conversion efficiency that has a heterojunction added by depositing two films.
〈効 果〉
以上本発明によれば、ＰＮ接合を備えた半導体基板の受
光面側にｎ型ＴｉＯ２膜を被着して太陽電池を構成する
ことによシ、簡単な構成を付加するのみで、短絡光電流
の増加と、電流−電圧曲線における曲率因子の増加によ
る相乗効果に伴ない、光電変換効率を著しく向上させる
ことができる。<Effects> According to the present invention, by forming a solar cell by depositing an n-type TiO2 film on the light-receiving surface side of a semiconductor substrate provided with a PN junction, it is possible to obtain solar cells by simply adding a simple structure. , the photoelectric conversion efficiency can be significantly improved due to the synergistic effect of increasing the short-circuit photocurrent and increasing the curvature factor in the current-voltage curve.
第１図は本発明７による一実施例を示す素子の断面図、
第２図は同実施例のバンドギャップ模型図、第３図は従
来素子のバンドギャップ模型図、第４図は従来素子の断
掌図である。
１：ｐ型シリコン基板 ３：ｎ型シリコン基板７′：ｎ
型ＴｉＯ２膜 ８：電極。FIG. 1 is a sectional view of an element showing an embodiment according to the present invention 7,
FIG. 2 is a bandgap model diagram of the same embodiment, FIG. 3 is a bandgap model diagram of a conventional device, and FIG. 4 is a sectional view of the conventional device. 1: P-type silicon substrate 3: N-type silicon substrate 7': n
Type TiO2 film 8: Electrode.
Claims (1)
層が表面に形成され、ｐ型半導体基板との間にＰＮ接合
を形成してなる半導体基板と、上記ｎ型半導体層の表面
に形成されてヘテロ接合をなすｎ型ＴｉＯ＿２膜とを備
えてなる太陽電池。 ２）前記半導体基板はシリコンからなることを特徴とす
る請求の範囲第１項記載の太陽電池。 ３）前記ｎ型ＴｉＯ＿２膜は絶縁性ＴｉＯ＿２膜を還元
処理してｎ型化されていることを特徴とする請求の範囲
第２項記載の太陽電池。[Claims] 1) A semiconductor substrate having an n-type semiconductor layer with a smaller band gap than TiO_2 formed on the surface and forming a PN junction with the p-type semiconductor substrate, and a surface of the n-type semiconductor layer. A solar cell comprising: an n-type TiO_2 film which is formed to form a heterojunction; 2) The solar cell according to claim 1, wherein the semiconductor substrate is made of silicon. 3) The solar cell according to claim 2, wherein the n-type TiO_2 film is made n-type by reducing an insulating TiO_2 film.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59213798A JPS6191972A (en) | 1984-10-11 | 1984-10-11 | Solar battery |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59213798A JPS6191972A (en) | 1984-10-11 | 1984-10-11 | Solar battery |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6191972A true JPS6191972A (en) | 1986-05-10 |
| JPH0213938B2 JPH0213938B2 (en) | 1990-04-05 |
Family
ID=16645219
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59213798A Granted JPS6191972A (en) | 1984-10-11 | 1984-10-11 | Solar battery |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6191972A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2011093360A1 (en) * | 2010-02-01 | 2011-08-04 | シャープ株式会社 | Process for production of back-electrode-type solar cell, back-electrode-type solar cell, and back-electrode-type solar cell module |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0320236U (en) * | 1989-06-30 | 1991-02-27 |
-
1984
- 1984-10-11 JP JP59213798A patent/JPS6191972A/en active Granted
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2011093360A1 (en) * | 2010-02-01 | 2011-08-04 | シャープ株式会社 | Process for production of back-electrode-type solar cell, back-electrode-type solar cell, and back-electrode-type solar cell module |
| JP2011159783A (en) * | 2010-02-01 | 2011-08-18 | Sharp Corp | Process for production of back-electrode-type solar cell, back-electrode-type solar cell, and back-electrode-type solar cell module |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0213938B2 (en) | 1990-04-05 |
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