JPS57126175A - Amorphous silicon carbide/amorophous silicon hetero junction optoelectric element - Google Patents

Amorphous silicon carbide/amorophous silicon hetero junction optoelectric element

Info

Publication number
JPS57126175A
JPS57126175A JP56012313A JP1231381A JPS57126175A JP S57126175 A JPS57126175 A JP S57126175A JP 56012313 A JP56012313 A JP 56012313A JP 1231381 A JP1231381 A JP 1231381A JP S57126175 A JPS57126175 A JP S57126175A
Authority
JP
Japan
Prior art keywords
layer
type
light
silicon carbide
amorphous silicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56012313A
Other languages
Japanese (ja)
Other versions
JPH0363229B2 (en
Inventor
Yoshihiro Hamakawa
Yoshihisa Owada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kanegafuchi Chemical Industry Co Ltd
Original Assignee
Kanegafuchi Chemical Industry Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kanegafuchi Chemical Industry Co Ltd filed Critical Kanegafuchi Chemical Industry Co Ltd
Priority to JP56012313A priority Critical patent/JPS57126175A/en
Priority to US06/253,141 priority patent/US4385199A/en
Priority to US06/266,064 priority patent/US4388482A/en
Priority to CA000391378A priority patent/CA1176740A/en
Priority to EP81110111A priority patent/EP0053402B1/en
Priority to DE8181110111T priority patent/DE3176919D1/en
Priority to AT81110111T priority patent/ATE38296T1/en
Priority to AU78224/81A priority patent/AU558650B2/en
Publication of JPS57126175A publication Critical patent/JPS57126175A/en
Priority to US06/420,711 priority patent/US4385200A/en
Priority to SG65589A priority patent/SG65589G/en
Priority to HK796/89A priority patent/HK79689A/en
Publication of JPH0363229B2 publication Critical patent/JPH0363229B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/20—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials
    • H01L31/202—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials including only elements of Group IV of the Periodic Table
    • H01L31/204—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials including only elements of Group IV of the Periodic Table including AIVBIV alloys, e.g. SiGe, SiC
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/075—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PIN type, e.g. amorphous silicon PIN solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/20—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/20—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials
    • H01L31/202—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials including only elements of Group IV of the Periodic Table
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/548—Amorphous silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Photovoltaic Devices (AREA)

Abstract

PURPOSE:To obtain high optoelectric conversion efficiency when a hetero junction optoelectric element is to be formed by a method wherein a thin film doped with amorphous silicon carbide is ued at least for one side of the P type layer or the N type layer of a P-I-N junction. CONSTITUTION:When the hetero junction optoelectric element is to be formed, the element having the form to be injected with light from the P type layer side is constituted of glass 19, a transparent electrode 20, a P type a-Si1-xCx layer 21, an I type a- Si layer 22, an N type a-Si layer 23, and an electrode 24 from the injecting side of light. When light is to be injected in the N type layer side, the element is constituted of a transparent electrode 29, an N type a-Si1-xCx layer 28, an I type a-Si layer 27, a P type a-Si layer 26, and an electrode substrate 25 from the light injecting side. In this constitution, the layer indicated with a general expression of a-Si1-xCx layer is the layer doped with amorphous silicon carbide, x is selected as 0.05-0.95, and electric conductivity is made as 10<-8>-10<-7>OMEGAcm<-1>. Moreover silane, silane fluoride, hydrocarbon, hydrocarbon fluoride, etc., is used as the material, and is formed to have thickness of 30-300Angstrom by plasma decomposition, etc.
JP56012313A 1980-12-03 1981-01-29 Amorphous silicon carbide/amorophous silicon hetero junction optoelectric element Granted JPS57126175A (en)

Priority Applications (11)

Application Number Priority Date Filing Date Title
JP56012313A JPS57126175A (en) 1981-01-29 1981-01-29 Amorphous silicon carbide/amorophous silicon hetero junction optoelectric element
US06/253,141 US4385199A (en) 1980-12-03 1981-04-10 Photovoltaic cell having a hetero junction of amorphous silicon carbide and amorphous silicon
US06/266,064 US4388482A (en) 1981-01-29 1981-05-19 High-voltage photovoltaic cell having a heterojunction of amorphous semiconductor and amorphous silicon
CA000391378A CA1176740A (en) 1980-12-03 1981-12-02 High-voltage photovoltaic cell having a hetero junction of amorphous semiconductor and amorphous silicon
DE8181110111T DE3176919D1 (en) 1980-12-03 1981-12-03 Pin photovoltaic cell having a hetero junction of amorphous siliconcompound and amorphous silicon
EP81110111A EP0053402B1 (en) 1980-12-03 1981-12-03 Pin photovoltaic cell having a hetero junction of amorphous siliconcompound and amorphous silicon
AT81110111T ATE38296T1 (en) 1980-12-03 1981-12-03 PIN TYPE PHOTOVOLTIC CELL WITH HETEROJUNION BETWEEN AN AMORPHOUS SILICON COMPOUND AND AMORPHEN SILICON.
AU78224/81A AU558650B2 (en) 1980-12-03 1981-12-03 Amorphous semiconductor high-voltage photovoltaic cell
US06/420,711 US4385200A (en) 1980-12-03 1982-09-21 Photovoltaic cell having a hetero junction of amorphous silicon carbide and amorphous silicon
SG65589A SG65589G (en) 1980-12-03 1989-09-20 Pin photovoltaic cell having a hetero junction of amorphous silicon compound and amorphous silicon
HK796/89A HK79689A (en) 1980-12-03 1989-10-05 Pin photovoltaic cell having a hetero junction of amorphous silicon compound and amorphous silicon

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56012313A JPS57126175A (en) 1981-01-29 1981-01-29 Amorphous silicon carbide/amorophous silicon hetero junction optoelectric element

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP58044692A Division JPS58217414A (en) 1983-03-16 1983-03-16 Novel amorphous silicon carbide

Publications (2)

Publication Number Publication Date
JPS57126175A true JPS57126175A (en) 1982-08-05
JPH0363229B2 JPH0363229B2 (en) 1991-09-30

Family

ID=11801821

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56012313A Granted JPS57126175A (en) 1980-12-03 1981-01-29 Amorphous silicon carbide/amorophous silicon hetero junction optoelectric element

Country Status (1)

Country Link
JP (1) JPS57126175A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57160175A (en) * 1981-03-28 1982-10-02 Semiconductor Energy Lab Co Ltd Photoelectric converter
JPS60247965A (en) * 1984-05-23 1985-12-07 Seiko Epson Corp Solid-state image pickup element
JPS60251275A (en) * 1984-05-29 1985-12-11 Mitsui Toatsu Chem Inc Manufacture of thin silicon fluoride film
US6383898B1 (en) 1999-05-28 2002-05-07 Sharp Kabushiki Kaisha Method for manufacturing photoelectric conversion device
US6731531B1 (en) 1997-07-29 2004-05-04 Micron Technology, Inc. Carburized silicon gate insulators for integrated circuits
US6835638B1 (en) 1997-07-29 2004-12-28 Micron Technology, Inc. Silicon carbide gate transistor and fabrication process

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4109271A (en) * 1977-05-27 1978-08-22 Rca Corporation Amorphous silicon-amorphous silicon carbide photovoltaic device
JPS554040A (en) * 1978-06-26 1980-01-12 Hitachi Ltd Photoconductive material
JPS5664476A (en) * 1979-08-30 1981-06-01 Plessey Overseas Armophous silicon solar battery

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4109271A (en) * 1977-05-27 1978-08-22 Rca Corporation Amorphous silicon-amorphous silicon carbide photovoltaic device
JPS554040A (en) * 1978-06-26 1980-01-12 Hitachi Ltd Photoconductive material
JPS5664476A (en) * 1979-08-30 1981-06-01 Plessey Overseas Armophous silicon solar battery

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57160175A (en) * 1981-03-28 1982-10-02 Semiconductor Energy Lab Co Ltd Photoelectric converter
JPS6230714B2 (en) * 1981-03-28 1987-07-03 Handotai Energy Kenkyusho
JPS60247965A (en) * 1984-05-23 1985-12-07 Seiko Epson Corp Solid-state image pickup element
JPS60251275A (en) * 1984-05-29 1985-12-11 Mitsui Toatsu Chem Inc Manufacture of thin silicon fluoride film
US6731531B1 (en) 1997-07-29 2004-05-04 Micron Technology, Inc. Carburized silicon gate insulators for integrated circuits
US6794255B1 (en) 1997-07-29 2004-09-21 Micron Technology, Inc. Carburized silicon gate insulators for integrated circuits
US6835638B1 (en) 1997-07-29 2004-12-28 Micron Technology, Inc. Silicon carbide gate transistor and fabrication process
US6383898B1 (en) 1999-05-28 2002-05-07 Sharp Kabushiki Kaisha Method for manufacturing photoelectric conversion device

Also Published As

Publication number Publication date
JPH0363229B2 (en) 1991-09-30

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