JPS57136377A - Amorphous silicon nitride/amorphous silicon heterojunction photoelectric element - Google Patents

Amorphous silicon nitride/amorphous silicon heterojunction photoelectric element

Info

Publication number
JPS57136377A
JPS57136377A JP56022690A JP2269081A JPS57136377A JP S57136377 A JPS57136377 A JP S57136377A JP 56022690 A JP56022690 A JP 56022690A JP 2269081 A JP2269081 A JP 2269081A JP S57136377 A JPS57136377 A JP S57136377A
Authority
JP
Japan
Prior art keywords
amorphous silicon
photoelectric element
silicon nitride
silane
type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56022690A
Other languages
Japanese (ja)
Other versions
JPH0544198B2 (en
Inventor
Yoshihiro Hamakawa
Yoshihisa Owada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kanegafuchi Chemical Industry Co Ltd
Original Assignee
Kanegafuchi Chemical Industry Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kanegafuchi Chemical Industry Co Ltd filed Critical Kanegafuchi Chemical Industry Co Ltd
Priority to JP56022690A priority Critical patent/JPS57136377A/en
Priority to US06/266,064 priority patent/US4388482A/en
Priority to CA000391378A priority patent/CA1176740A/en
Priority to EP81110111A priority patent/EP0053402B1/en
Priority to AU78224/81A priority patent/AU558650B2/en
Priority to DE8181110111T priority patent/DE3176919D1/en
Priority to AT81110111T priority patent/ATE38296T1/en
Priority to MX81190403A priority patent/MX157367A/en
Publication of JPS57136377A publication Critical patent/JPS57136377A/en
Priority to SG65589A priority patent/SG65589G/en
Priority to HK796/89A priority patent/HK79689A/en
Publication of JPH0544198B2 publication Critical patent/JPH0544198B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/075—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PIN type, e.g. amorphous silicon PIN solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/20—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/20—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials
    • H01L31/202—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials including only elements of Group IV of the Periodic Table
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/20—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials
    • H01L31/202—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials including only elements of Group IV of the Periodic Table
    • H01L31/204—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials including only elements of Group IV of the Periodic Table including AIVBIV alloys, e.g. SiGe, SiC
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/548—Amorphous silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Photovoltaic Devices (AREA)

Abstract

PURPOSE:To improve efficiency by a method wherein a doped thin film of amorphous silicon nitride which is obtained by plasma decomposing mixture of hydrogenated compounds of silane and silane fluoride is used as one of P type and N type layers in a P-i-N junction photoelectric element. CONSTITUTION:When a P-I-N junction structure in which P type and N type doped semiconductors are brought into a junction with an I-layer made from intrinsic amorphous silicon (a-Si) which is obtained by glow discharge decomposition of silane or its derivatives or silane fluoride or its derivatives or their mixture is formed, at least on one irradiated side, amorphous silicon nitride is used to form a heterojunction photoelectric element of (a-Si1-xNx) and (a-Si). By this method an efficiency of solar battery or the like is improved.
JP56022690A 1980-02-04 1981-02-17 Amorphous silicon nitride/amorphous silicon heterojunction photoelectric element Granted JPS57136377A (en)

Priority Applications (10)

Application Number Priority Date Filing Date Title
JP56022690A JPS57136377A (en) 1981-02-17 1981-02-17 Amorphous silicon nitride/amorphous silicon heterojunction photoelectric element
US06/266,064 US4388482A (en) 1981-01-29 1981-05-19 High-voltage photovoltaic cell having a heterojunction of amorphous semiconductor and amorphous silicon
CA000391378A CA1176740A (en) 1980-12-03 1981-12-02 High-voltage photovoltaic cell having a hetero junction of amorphous semiconductor and amorphous silicon
DE8181110111T DE3176919D1 (en) 1980-12-03 1981-12-03 Pin photovoltaic cell having a hetero junction of amorphous siliconcompound and amorphous silicon
AU78224/81A AU558650B2 (en) 1980-12-03 1981-12-03 Amorphous semiconductor high-voltage photovoltaic cell
EP81110111A EP0053402B1 (en) 1980-12-03 1981-12-03 Pin photovoltaic cell having a hetero junction of amorphous siliconcompound and amorphous silicon
AT81110111T ATE38296T1 (en) 1980-12-03 1981-12-03 PIN TYPE PHOTOVOLTIC CELL WITH HETEROJUNION BETWEEN AN AMORPHOUS SILICON COMPOUND AND AMORPHEN SILICON.
MX81190403A MX157367A (en) 1980-02-04 1981-12-03 IMPROVEMENTS TO AMORPHO P-I-N SILICON PHOTOVOLTAIC CELL
SG65589A SG65589G (en) 1980-12-03 1989-09-20 Pin photovoltaic cell having a hetero junction of amorphous silicon compound and amorphous silicon
HK796/89A HK79689A (en) 1980-12-03 1989-10-05 Pin photovoltaic cell having a hetero junction of amorphous silicon compound and amorphous silicon

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56022690A JPS57136377A (en) 1981-02-17 1981-02-17 Amorphous silicon nitride/amorphous silicon heterojunction photoelectric element

Publications (2)

Publication Number Publication Date
JPS57136377A true JPS57136377A (en) 1982-08-23
JPH0544198B2 JPH0544198B2 (en) 1993-07-05

Family

ID=12089863

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56022690A Granted JPS57136377A (en) 1980-02-04 1981-02-17 Amorphous silicon nitride/amorphous silicon heterojunction photoelectric element

Country Status (1)

Country Link
JP (1) JPS57136377A (en)

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57160175A (en) * 1981-03-28 1982-10-02 Semiconductor Energy Lab Co Ltd Photoelectric converter
JPS5868046U (en) * 1981-11-02 1983-05-09 工業技術院長 photovoltaic element
US4726851A (en) * 1984-11-27 1988-02-23 Toa Nenryo Kogyo K.K. Amorphous silicon semiconductor film and production process thereof
JPS6384074A (en) * 1986-09-26 1988-04-14 Sanyo Electric Co Ltd Photovoltaic device
JPH0370185A (en) * 1989-08-09 1991-03-26 Sanyo Electric Co Ltd Amorphous semiconductor device
JP2009076939A (en) * 2008-12-22 2009-04-09 Sharp Corp Photoelectric conversion device and its manufacturing method
WO2009081713A1 (en) * 2007-12-26 2009-07-02 Mitsubishi Heavy Industries, Ltd. Photoelectric converting device and process for producing the photoelectric converting device
JP2010118695A (en) * 2010-02-22 2010-05-27 Mitsubishi Heavy Ind Ltd Photoelectric conversion apparatus, and method of manufacturing the same
US7915520B2 (en) 2004-03-24 2011-03-29 Sharp Kabushiki Kaisha Photoelectric conversion device and manufacturing method thereof

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5464981A (en) * 1977-10-12 1979-05-25 Energy Conversion Devices Inc High temperature amorphous semiconductor member and method of producing same
JPS5513938A (en) * 1978-07-17 1980-01-31 Shunpei Yamazaki Photoelectronic conversion semiconductor device and its manufacturing method
JPS5513939A (en) * 1978-07-17 1980-01-31 Shunpei Yamazaki Photoelectronic conversion semiconductor device

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5464981A (en) * 1977-10-12 1979-05-25 Energy Conversion Devices Inc High temperature amorphous semiconductor member and method of producing same
JPS5513938A (en) * 1978-07-17 1980-01-31 Shunpei Yamazaki Photoelectronic conversion semiconductor device and its manufacturing method
JPS5513939A (en) * 1978-07-17 1980-01-31 Shunpei Yamazaki Photoelectronic conversion semiconductor device

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57160175A (en) * 1981-03-28 1982-10-02 Semiconductor Energy Lab Co Ltd Photoelectric converter
JPS6230714B2 (en) * 1981-03-28 1987-07-03 Handotai Energy Kenkyusho
JPS5868046U (en) * 1981-11-02 1983-05-09 工業技術院長 photovoltaic element
JPS629747Y2 (en) * 1981-11-02 1987-03-06
US4726851A (en) * 1984-11-27 1988-02-23 Toa Nenryo Kogyo K.K. Amorphous silicon semiconductor film and production process thereof
JPS6384074A (en) * 1986-09-26 1988-04-14 Sanyo Electric Co Ltd Photovoltaic device
JPH0370185A (en) * 1989-08-09 1991-03-26 Sanyo Electric Co Ltd Amorphous semiconductor device
US7915520B2 (en) 2004-03-24 2011-03-29 Sharp Kabushiki Kaisha Photoelectric conversion device and manufacturing method thereof
WO2009081713A1 (en) * 2007-12-26 2009-07-02 Mitsubishi Heavy Industries, Ltd. Photoelectric converting device and process for producing the photoelectric converting device
JP2009158667A (en) * 2007-12-26 2009-07-16 Mitsubishi Heavy Ind Ltd Photoelectric converter and method of producing the same
JP2009076939A (en) * 2008-12-22 2009-04-09 Sharp Corp Photoelectric conversion device and its manufacturing method
JP2010118695A (en) * 2010-02-22 2010-05-27 Mitsubishi Heavy Ind Ltd Photoelectric conversion apparatus, and method of manufacturing the same

Also Published As

Publication number Publication date
JPH0544198B2 (en) 1993-07-05

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