JPS558092A - Fine film solar cell and its production method - Google Patents

Fine film solar cell and its production method

Info

Publication number
JPS558092A
JPS558092A JP8168278A JP8168278A JPS558092A JP S558092 A JPS558092 A JP S558092A JP 8168278 A JP8168278 A JP 8168278A JP 8168278 A JP8168278 A JP 8168278A JP S558092 A JPS558092 A JP S558092A
Authority
JP
Japan
Prior art keywords
fine film
solar cell
film solar
crystal
production method
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP8168278A
Other languages
Japanese (ja)
Other versions
JPS6111475B2 (en
Inventor
Setsuo Kaneko
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP8168278A priority Critical patent/JPS558092A/en
Publication of JPS558092A publication Critical patent/JPS558092A/en
Publication of JPS6111475B2 publication Critical patent/JPS6111475B2/ja
Granted legal-status Critical Current

Links

Classifications

    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/548—Amorphous silicon PV cells

Landscapes

  • Photovoltaic Devices (AREA)

Abstract

PURPOSE: To enhance sensitivity of long wave and long side by making P layer Si thickness of P-i-n constructed SixGe1-x non-crystal fine film higher than; and n layer.
CONSTITUTION: By a glow discharge resolution of a mixtured gas including SiH4 and GeH4 on a plate 1, n type SixGe1-x non-crystal fine film 2 and then i-non- crystal SixGe1-x fine film 3 are groun respectively. Then by the glow discharge resolution of the mixtured gas including SiH4 and GeH4, P type SixGe1-x non- crystal fine film 4 groun to form a P-i-n joint. The feature of a spectrum sensitivity of a fine film solar cell obtained thus can enhance greatly the sensitivity of long wave and long side without reducing that of short wave and long side.
COPYRIGHT: (C)1980,JPO&Japio
JP8168278A 1978-07-04 1978-07-04 Fine film solar cell and its production method Granted JPS558092A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8168278A JPS558092A (en) 1978-07-04 1978-07-04 Fine film solar cell and its production method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8168278A JPS558092A (en) 1978-07-04 1978-07-04 Fine film solar cell and its production method

Publications (2)

Publication Number Publication Date
JPS558092A true JPS558092A (en) 1980-01-21
JPS6111475B2 JPS6111475B2 (en) 1986-04-03

Family

ID=13753118

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8168278A Granted JPS558092A (en) 1978-07-04 1978-07-04 Fine film solar cell and its production method

Country Status (1)

Country Link
JP (1) JPS558092A (en)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5778135A (en) * 1980-11-01 1982-05-15 Semiconductor Energy Lab Co Ltd Semiconductor device and manufacture thereof
JPS599978A (en) * 1982-07-08 1984-01-19 Mitsubishi Electric Corp Semiconductor device
JPS59141278A (en) * 1983-02-02 1984-08-13 Fuji Xerox Co Ltd Photoelectric conversion element and manufacture thereof
JPS604274A (en) * 1983-06-22 1985-01-10 Toshiba Corp Photoelectric conversion member
JPS604273A (en) * 1983-06-22 1985-01-10 Toshiba Corp Photoelectric conversion member
JPS6066876A (en) * 1983-09-22 1985-04-17 Fuji Xerox Co Ltd Photoelectric conversion element
JPS60210884A (en) * 1984-06-29 1985-10-23 Hitachi Ltd Photo reception surface

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63240477A (en) * 1987-03-26 1988-10-06 Nissan Motor Co Ltd Roof panel mounting part structure for automobile

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5778135A (en) * 1980-11-01 1982-05-15 Semiconductor Energy Lab Co Ltd Semiconductor device and manufacture thereof
JPH0345555B2 (en) * 1980-11-01 1991-07-11 Handotai Energy Kenkyusho
JPS599978A (en) * 1982-07-08 1984-01-19 Mitsubishi Electric Corp Semiconductor device
JPS59141278A (en) * 1983-02-02 1984-08-13 Fuji Xerox Co Ltd Photoelectric conversion element and manufacture thereof
JPS604274A (en) * 1983-06-22 1985-01-10 Toshiba Corp Photoelectric conversion member
JPS604273A (en) * 1983-06-22 1985-01-10 Toshiba Corp Photoelectric conversion member
JPH0473312B2 (en) * 1983-06-22 1992-11-20 Tokyo Shibaura Electric Co
JPH0473311B2 (en) * 1983-06-22 1992-11-20 Tokyo Shibaura Electric Co
JPS6066876A (en) * 1983-09-22 1985-04-17 Fuji Xerox Co Ltd Photoelectric conversion element
JPS60210884A (en) * 1984-06-29 1985-10-23 Hitachi Ltd Photo reception surface
JPH051634B2 (en) * 1984-06-29 1993-01-08 Hitachi Ltd

Also Published As

Publication number Publication date
JPS6111475B2 (en) 1986-04-03

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