JPS599978A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS599978A JPS599978A JP57120243A JP12024382A JPS599978A JP S599978 A JPS599978 A JP S599978A JP 57120243 A JP57120243 A JP 57120243A JP 12024382 A JP12024382 A JP 12024382A JP S599978 A JPS599978 A JP S599978A
- Authority
- JP
- Japan
- Prior art keywords
- amorphous
- composition ratio
- film
- semiconductor device
- photoconductivity
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 14
- 239000000203 mixture Substances 0.000 claims abstract description 16
- 229910021417 amorphous silicon Inorganic materials 0.000 claims abstract description 8
- 238000000034 method Methods 0.000 claims abstract description 8
- 239000000463 material Substances 0.000 claims description 5
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 claims description 3
- 229910052732 germanium Inorganic materials 0.000 claims description 3
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 2
- 230000000694 effects Effects 0.000 abstract description 4
- 229910006990 Si1-xGex Inorganic materials 0.000 abstract 2
- 229910007020 Si1−xGex Inorganic materials 0.000 abstract 2
- 230000015556 catabolic process Effects 0.000 abstract 2
- 230000003247 decreasing effect Effects 0.000 abstract 2
- 238000006731 degradation reaction Methods 0.000 abstract 2
- 239000010408 film Substances 0.000 description 13
- 230000007423 decrease Effects 0.000 description 12
- 239000000758 substrate Substances 0.000 description 12
- 238000010586 diagram Methods 0.000 description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000000354 decomposition reaction Methods 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 230000035605 chemotaxis Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 210000001161 mammalian embryo Anatomy 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 230000002123 temporal effect Effects 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/0312—Inorganic materials including, apart from doping materials or other impurities, only AIVBIV compounds, e.g. SiC
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
- H01L31/0376—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including amorphous semiconductors
- H01L31/03762—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including amorphous semiconductors including only elements of Group IV of the Periodic System
- H01L31/03765—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including amorphous semiconductors including only elements of Group IV of the Periodic System including AIVBIV compounds or alloys, e.g. SiGe, SiC
Abstract
Description
【発明の詳細な説明】
この発明はアモルファス半導体装置に関するものである
。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to an amorphous semiconductor device.
アモルファスシリコン（Ｓｉ）は光電変換材料トシて有
望視されておシ、ステンレス鋼、ガラス等ノ安価な基板
上への生成と大面積化が可能であることから太陽電池、
感光材料、 ＴＰＴ ）ランジスタ等への応用がなされ
ている。Amorphous silicon (Si) is considered to be a promising photoelectric conversion material, and is used in solar cells because it can be produced on inexpensive substrates such as stainless steel and glass, and can be grown over large areas.
It has been applied to photosensitive materials, TPT) transistors, etc.
特にグロー放電分解法にして生成したアモルファスＳ１
は膜質が良好であるが、膜中に多量の水素を含み、基板
上に厚いアモルファスＳ１膜を成長するような□゛場合
内部応力がかなり大きく、基板が歪んだり、アモルファ
スＳ１膜が基板から剥離し易いことが良く知られている
。In particular, amorphous S1 produced by glow discharge decomposition method
The film quality is good, but when the film contains a large amount of hydrogen and a thick amorphous S1 film is grown on the substrate, the internal stress is quite large, causing the substrate to become distorted or the amorphous S1 film to peel off from the substrate. It is well known that it is easy to do.
さらに、グロー放電分解法で作成したアモルファスＳ１
は光照射を行うと、光構造変化を起こし、照射後には伝
導度、光伝導度の低下という現象を起こす（Ｓｔａｅｂ
ｌｅｒ −ＷｒｏｎＩｌｌｋｉ効果）。これらの１模が
基板から剥離したり、光照射により膜質が変化する七い
うことはデバイスへの応用に大きな障害となり、また信
頼性という観点からも問題となる点である。Furthermore, amorphous S1 prepared by glow discharge decomposition method
When irradiated with light, it causes a change in the optical structure, and after irradiation, a phenomenon of a decrease in conductivity and photoconductivity occurs (Staeb
ler-WronIllki effect). The fact that one of these patterns peels off from the substrate or the film quality changes due to light irradiation is a major obstacle to application to devices, and also poses a problem from the viewpoint of reliability.
この発明は以上のような点に鑑みてなされたもので、ア
モルファス５ｉ（ａ−８ｉ）の代りに、これにゲルマニ
ウム（Ｇθ）を添加したアモルファス・シリコン・ゲル
マニウム（ａ−８ｉ□−ｘＧθＸ）を用いることによっ
て、その他の特性を余り劣化させることなく、上述のよ
うな問題点を大幅に改善した半導体装置を提供すること
を目的としている。This invention was made in view of the above points, and instead of amorphous 5i (a-8i), amorphous silicon germanium (a-8i□-xGθX), which is added with germanium (Gθ), is used. It is an object of the present invention to provide a semiconductor device in which the above-mentioned problems can be significantly improved by using the semiconductor device without significantly deteriorating other characteristics.
第１図はシリコン基板（１）の上にグロー放電法によっ
てアモルファス半導体膜（２）を堆積したときの歪の発
生を誇張して示す側面図で、図のΔｈで歪量を示すこと
ＶＣする。第２図はａ〜８１□−エＧｅ工膜をグロー放
電法によって８１基板上に堆積したときの基板の歪量Δ
ｈとＧｅ濃度との関係を概念的に示す図で、小破のＧｅ
の添加（Ｇｅの組成比Ｘの小さいゝ値）で歪の発生は著
しく減少することが判る。Figure 1 is a side view exaggerating the occurrence of strain when an amorphous semiconductor film (2) is deposited on a silicon substrate (1) by a glow discharge method, and the amount of strain is indicated by Δh in the figure. . Figure 2 shows the amount of strain Δ on the substrate when a ~ 81□-E Ge film was deposited on the 81 substrate by the glow discharge method.
This is a diagram conceptually showing the relationship between h and Ge concentration.
It can be seen that the occurrence of strain is significantly reduced by the addition of (a small value of the Ge composition ratio X).
第３図はａ−８ｉ＠を用いた光電素子に光照射したとき
の伝導度σの変化の一例をホす図で、時間０の光照射開
始時点の光体導度初期値σｐｈｏから時間とともに光体
導度σｐｈは減少していくこと（Ｓｔａｅｂｌｅｒ −
Ｗｒｏｎｅｋｉ効果）を示している。Figure 3 shows an example of the change in conductivity σ when a photoelectric element using a-8i@ is irradiated with light. The light conductivity σph decreases (Staebler −
Wroneki effect).
第４図はａ−８ｉＧθ膜の場合についてＡＭｌｌｏｏｌ
−Ｘ Ｘ
ｍｗ／ｃｍ２の光を４時間照射した場合の光体導度の初
期値からの低下の率（σｐｈ／σア。）とＧｅの組成比
Ｘとの関係を示す図で、ａ−８ｉでは光照射後は初期値
の２０％程度まで低下するが、ａ−８ｉ□−ＸＧｅＸで
はＧθ組成比Ｘの増加に伴ってその低下は急激に改善さ
れ、わずかのＧｅの添加で十分効果があることがこのよ
うニＧθの添加によって歪の発生、光体導度の低下は改
善されるが、その他の特性に対する影響を調べてみる。Figure 4 shows AMllool for the case of a-8iGθ film.
-X In 8i, the value decreases to about 20% of the initial value after light irradiation, but in a-8i□-XGeX, the decrease rapidly improves as the Gθ composition ratio X increases, and the addition of a small amount of Ge is sufficient. Although the addition of Gθ improves the occurrence of distortion and the decrease in optical conductivity, let us examine the effect on other characteristics.
第５図はａ−８ｉ□−ＸＧｅＸ膜についてＧθ組成比Ｘ
とバンドギャップＥｇｏ ｐｔとの関係を示す図で、Ｇ
ｅの添加によってバンドギャップＥｇｙｐｔは１．８５
〜１．１ ｅＶ程度の間で連続的に変化する。第６図は
伝導度と光体導菱とのＧｅ組成比Ｘに対する依存性の代
表的−例を示す図で、膜の作１戊法によっである程度の
バラツキはあるが、Ｇｅ＃度と共に伝導度は上り、光体
導度は低下する傾向にある。しかし、図でも判るように
、Ｇｅ濃度が小さい領域（Ｘが０〜０．１）ではａ−８
ｉ膜の特性とさほど変らない。第７区Ｉはａ−８ｉ□−
ＸＧｅ−を用いて単層の太陽電池を作成した場合の太１
湯電池特性のＧｅ組成比ＸＫ対する依存性を示す図で、
開放端電圧は第５図のバンドギャップに対応してＧθ組
成比Ｘとともに低下し、短絡電流はＧθ組成比Ｘの値０
．１〜０．４の点に最大値がある。そして、変換効率は
Ｇｅ組成比Ｘが小さい領域では低下は小さく、Ｘの大き
い鎖酸で低下が見られる。Figure 5 shows the Gθ composition ratio X for the a-8i□-XGeX film.
This is a diagram showing the relationship between G and bandgap Ego pt.
By adding e, the band gap Egypt becomes 1.85.
It changes continuously between approximately 1.1 eV and 1.1 eV. Figure 6 is a diagram showing a typical example of the dependence of conductivity and light conductor on the Ge composition ratio X. Although there is some variation depending on the method of film production, The conductivity tends to increase and the light conductivity tends to decrease. However, as can be seen in the figure, in the region where the Ge concentration is small (X is 0 to 0.1), a-8
The characteristics are not much different from those of the i-film. Ward 7 I is a-8i□-
Thickness 1 when creating a single layer solar cell using XGe-
A diagram showing the dependence of hot water battery characteristics on the Ge composition ratio XK,
The open circuit voltage decreases with the Gθ composition ratio X, corresponding to the band gap shown in FIG. 5, and the short circuit current decreases when the Gθ composition ratio X is 0.
．． The maximum value is between 1 and 0.4. The conversion efficiency decreases little in the region where the Ge composition ratio X is small, and decreases in the chain acid where X is large.
以上のように従来のａ−８ｉの代り１ＩｎＧｅ組成比Ｘ
が０．１以下のａ−８ｉ□、、ＸＧｅいを用いることに
よって、一般的特性をさほど低下さ仕ることｔ、Ｋ＜、
基板の走の発生、および元伝導胚の時間的低下を大幅に
改善できる。As mentioned above, instead of the conventional a-8i, 1InGe composition ratio
By using a-8i□, ,
The generation of substrate chemotaxis and the temporal decline of the original conducting embryo can be significantly improved.
ｆＳお、上記説明からこの発明は元電半導体系子に適し
ていることは勿論であるが、薄膜トランジスタ等の材料
としても効果がある。fS: From the above description, it goes without saying that the present invention is suitable for electronic semiconductor devices, but it is also effective as a material for thin film transistors and the like.
以上説明したように、この発明ではＧｅ組成比Ｘが帆１
以下のａ−８ｉ□、Ｇｅ Ｘを半導体材料としたので特
性の優れンと、かつ安定した半導体装置が得られる。As explained above, in this invention, the Ge composition ratio
Since the following a-8i□ and GeX are used as semiconductor materials, a semiconductor device with excellent characteristics and stability can be obtained.
第１図はシリコン基板上Ｖこグロー放電法によってアモ
ルファス半導体１漢を堆積したときの歪の発生を誇張し
て示す側面図、第２図はａ−８ｉ□−ＸＧｅＸ膜をグロ
ー放電法によって８１基板上に堆積したときの基板の歪
とＧｅ濃度との関係を概念的に示す図、第３図はａ−８
ｉ膜を用いた光゛屯素子に光照射したときの伝導度の変
化の一例を示す図、第４図はａ−８ｉ□−ＸＧｅＸ膜に
ついて所定の光通を照射した場合の光体導度の初期値か
らの低下率とＧｏ組成比Ｘとの関係をボす図、第５図は
ａ−８ｉ□−ＸＧｅＸ膜について、Ｇｅｉ成比Ｘとバン
ドギャップとの関係を示す図、第６図は伝導度と光体導
度とのＧｅ組成比ｘｌｃ対する依存性の代表的−例を示
す図、第７代理人 Ｓ 野 価 −（外１名）
第２図
第３図 第４図
時間 ｃＩｅ紐戒比Ｘ
第す図
（ｉｅ瓶へ化石
第７図
ａｅ紐八へて
手続捕正書（自発）
’４！＋’ ｊ’ｌ’ ｌｉ： Ｌ＜信殿１、・１０′
１の人示 ！１１″願昭５７−１２０２４３号２
発明の名ｆ＋、 半導体装置
３、 ｔｉｌｉｉｌをするに
・Ｉｆｔ’ｌとの関係 ’Ｉ’５’１ｔ’ｌ出願人
５、補正の対象
明細書の発明の詳細な説明の欄
６、補正の内容
明細書をつぎのとおり訂正する。
以上Figure 1 is a side view exaggerating the occurrence of strain when one amorphous semiconductor is deposited on a silicon substrate by the glow discharge method. A diagram conceptually showing the relationship between substrate strain and Ge concentration when deposited on a substrate, Figure 3 is a-8
A diagram showing an example of the change in conductivity when a light beam element using an i film is irradiated with light. Figure 4 shows the light conductivity when the a-8i□-XGeX film is irradiated with a predetermined light beam. Figure 5 is a diagram showing the relationship between the rate of decrease from the initial value and the Go composition ratio X, and Figure 5 is a diagram showing the relationship between the Ge composition ratio Figure 2 shows a typical example of the dependence of conductivity and light conductivity on the Ge composition ratio xlc. String command ratio
1 person demonstration! 11″ Application No. 57-120243 No. 2
Name of the invention f+, Semiconductor device 3, Relationship between tiliil and If'l 'I'5'1t'l Applicant 5, Detailed description of the invention column 6 of the specification subject to amendment, Contents of the amendment The specification is amended as follows. that's all
Claims (2)
り太きく０．１以下のアモルファス・シリコン・ゲルマ
ニウム膜を用いたことを特徴とする半導体装置。(1) A semiconductor device characterized in that an amorphous silicon germanium film having a germanium composition ratio greater than 0 and less than 0.1 is used as a semiconductor material.
Ｅはグロー放電法で形成されたものであることを特徴と
する特許請求の範囲第１項記載の半導体装置。(2) Amorphous silicon germanium II
2. The semiconductor device according to claim 1, wherein E is formed by a glow discharge method.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57120243A JPS599978A (en) | 1982-07-08 | 1982-07-08 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57120243A JPS599978A (en) | 1982-07-08 | 1982-07-08 | Semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS599978A true JPS599978A (en) | 1984-01-19 |
Family
ID=14781374
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57120243A Pending JPS599978A (en) | 1982-07-08 | 1982-07-08 | Semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS599978A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63102035U (en) * | 1986-12-20 | 1988-07-02 | ||
| JPH01143363A (en) * | 1987-11-30 | 1989-06-05 | Hitachi Ltd | Manufacture of amorphous solar cell |
| JPH0262079A (en) * | 1988-08-29 | 1990-03-01 | Hitachi Ltd | Silicon amorphous solar cell |
| JP2007050858A (en) * | 2005-08-19 | 2007-03-01 | Yanmar Co Ltd | Vehicle frame |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS558092A (en) * | 1978-07-04 | 1980-01-21 | Nec Corp | Fine film solar cell and its production method |
-
1982
- 1982-07-08 JP JP57120243A patent/JPS599978A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS558092A (en) * | 1978-07-04 | 1980-01-21 | Nec Corp | Fine film solar cell and its production method |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63102035U (en) * | 1986-12-20 | 1988-07-02 | ||
| JPH01143363A (en) * | 1987-11-30 | 1989-06-05 | Hitachi Ltd | Manufacture of amorphous solar cell |
| JPH0262079A (en) * | 1988-08-29 | 1990-03-01 | Hitachi Ltd | Silicon amorphous solar cell |
| JP2007050858A (en) * | 2005-08-19 | 2007-03-01 | Yanmar Co Ltd | Vehicle frame |
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