JPS57106086A - Solar cell and manufacture thereof - Google Patents
Solar cell and manufacture thereofInfo
- Publication number
- JPS57106086A JPS57106086A JP55182657A JP18265780A JPS57106086A JP S57106086 A JPS57106086 A JP S57106086A JP 55182657 A JP55182657 A JP 55182657A JP 18265780 A JP18265780 A JP 18265780A JP S57106086 A JPS57106086 A JP S57106086A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- oxide semiconductor
- type oxide
- porcelain
- multicrystal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 abstract 6
- 229910052573 porcelain Inorganic materials 0.000 abstract 5
- 239000000758 substrate Substances 0.000 abstract 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 238000000034 method Methods 0.000 abstract 2
- 229910002370 SrTiO3 Inorganic materials 0.000 abstract 1
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 239000013078 crystal Substances 0.000 abstract 1
- 238000007606 doctor blade method Methods 0.000 abstract 1
- 230000002401 inhibitory effect Effects 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
Landscapes
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photovoltaic Devices (AREA)
Abstract
PURPOSE:To provide a solar cell which has a less change with time, by a method wherein one of a N type and a P type conductive semiconductor percelain is made of a multicrystal and the other of a non-crystal. CONSTITUTION:A substrate 11 is of a P type oxide semiconductor porcelain and consists of a multicrystal P type oxide semiconductor porcelain and consists of a multicrystal P type oxide semiconductor porcelain whose main component is Pb0.94Sr0.06Zr0.53Ti0.47O3 and in which a minute amount of SiO2 is added to said basic component. The substrate 11 is obtained by forming it into a thin layer by, for example, a doctor blade method for burning. An N type oxide semiconductor porcelain 12 is formed in a non-crystalline state using, for example, SrTiO3 on the substrate 11 by a spattering method. This forms a P-N junction 13. Electrodes 14 and 15 are then formed on the substrate 11 and porcelain 12, respectively. If a solar light 17 is caused to enter the solar cell, an incident light, having a larger energy than an inhibiting band of a semiconductor, of incident lights pair-generates an electron and a positive hole by a P-N junction 13 to produce a current.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP55182657A JPS57106086A (en) | 1980-12-23 | 1980-12-23 | Solar cell and manufacture thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP55182657A JPS57106086A (en) | 1980-12-23 | 1980-12-23 | Solar cell and manufacture thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS57106086A true JPS57106086A (en) | 1982-07-01 |
Family
ID=16122146
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP55182657A Pending JPS57106086A (en) | 1980-12-23 | 1980-12-23 | Solar cell and manufacture thereof |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57106086A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1992016022A1 (en) * | 1991-03-07 | 1992-09-17 | Centre National De La Recherche Scientifique (Cnrs) | Photodetecting device including a transparent electrode of low electrical resistance |
| WO2004047187A1 (en) * | 2002-11-15 | 2004-06-03 | Zenji Hiroi | Optical sensor |
| JP2015130464A (en) * | 2013-12-03 | 2015-07-16 | セイコーエプソン株式会社 | Photoelectric conversion element, method for manufacturing the same, optical sensor, and solar battery cell |
-
1980
- 1980-12-23 JP JP55182657A patent/JPS57106086A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1992016022A1 (en) * | 1991-03-07 | 1992-09-17 | Centre National De La Recherche Scientifique (Cnrs) | Photodetecting device including a transparent electrode of low electrical resistance |
| WO2004047187A1 (en) * | 2002-11-15 | 2004-06-03 | Zenji Hiroi | Optical sensor |
| JP2015130464A (en) * | 2013-12-03 | 2015-07-16 | セイコーエプソン株式会社 | Photoelectric conversion element, method for manufacturing the same, optical sensor, and solar battery cell |
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