JPS55115376A - Semiconductor device and manufacturing thereof - Google Patents

Abstract

PURPOSE: To provide a photoelectric converter which has not only a flat face but also a face of desired shape, by producing a non-single-crystal semiconductor layer by a pressure reduction gas phase method, a plasma gas phase method, a glow discharge method or the like on a substrate which has an optional shape and has recesses and projections on at least part of the surface.

CONSTITUTION: An electroconductive film 2 of SnO₂ or the like is coated on a light permeable substrate 3 of glass, sapphire or the like. A semiconductor layer 1 is made of a metal, an intrinsic semiconductor are an n-type semiconductor, a p-type semiconductor, an intrinsic semiconductor and an n-type semiconductor or the like on the film 2. An electrode 4 is fitted on the layer 1. An electromotive force caused by irraidating light 5 upon the exposed face of the substrate 3 is picked out through the layer 2 and the electrode 4. A photoelectric converter is thus manufactured. Minute recesses and projections are previously provided on the semiconductor layer coated face of the substrate. A flexible substrate made of polyimide resin may be used as necessary. The semiconductor layer is made of non-single crystal. This results in making the photoelectric converter appropriate in manufacturing a timepiece or the like.

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