JPS5481092A - Manufacture of back field effect type solar battery - Google Patents

Manufacture of back field effect type solar battery

Info

Publication number
JPS5481092A
JPS5481092A JP14816177A JP14816177A JPS5481092A JP S5481092 A JPS5481092 A JP S5481092A JP 14816177 A JP14816177 A JP 14816177A JP 14816177 A JP14816177 A JP 14816177A JP S5481092 A JPS5481092 A JP S5481092A
Authority
JP
Japan
Prior art keywords
type
solar battery
manufacture
field effect
type solar
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP14816177A
Other languages
Japanese (ja)
Other versions
JPS5440912B2 (en
Inventor
Takeshi Saito
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Institute of Advanced Industrial Science and Technology AIST
Original Assignee
Agency of Industrial Science and Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agency of Industrial Science and Technology filed Critical Agency of Industrial Science and Technology
Priority to JP14816177A priority Critical patent/JPS5481092A/en
Publication of JPS5481092A publication Critical patent/JPS5481092A/en
Publication of JPS5440912B2 publication Critical patent/JPS5440912B2/ja
Granted legal-status Critical Current

Links

Classifications

    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy

Landscapes

  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Photovoltaic Devices (AREA)

Abstract

PURPOSE: To realize the manufacturing process of the solar battery, through which the formation of the back high-impurity density layer and the formation of the back electrode in one process for the back field type solar battery.
CONSTITUTION: P+-type surface layer 1 is formed on n-type Si substrate 2, and then eutectic liquid layer 3' of P- or N-type impurity and Si is formed on the back of substrate 2. The si thin film of a high-impurity density featuring the same conductive type as P- or n-type substrate is deposited and formed from the eutectic liquid layer, and at the same time metal solidified layer 4' is formed on the Si thin film.
COPYRIGHT: (C)1979,JPO&Japio
JP14816177A 1977-12-12 1977-12-12 Manufacture of back field effect type solar battery Granted JPS5481092A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14816177A JPS5481092A (en) 1977-12-12 1977-12-12 Manufacture of back field effect type solar battery

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14816177A JPS5481092A (en) 1977-12-12 1977-12-12 Manufacture of back field effect type solar battery

Publications (2)

Publication Number Publication Date
JPS5481092A true JPS5481092A (en) 1979-06-28
JPS5440912B2 JPS5440912B2 (en) 1979-12-05

Family

ID=15446609

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14816177A Granted JPS5481092A (en) 1977-12-12 1977-12-12 Manufacture of back field effect type solar battery

Country Status (1)

Country Link
JP (1) JPS5481092A (en)

Also Published As

Publication number Publication date
JPS5440912B2 (en) 1979-12-05

Similar Documents

Publication Publication Date Title
JPS5481092A (en) Manufacture of back field effect type solar battery
JPS5389374A (en) Production of semiconductor device
JPS52124860A (en) Electrode formation method for semiconductor devices
JPS5360171A (en) Electrode for silicon substrate and its production
JPS53115181A (en) Production of semiconductor device
JPS5282087A (en) Production of solar cell
JPS5441673A (en) Semiconductor device and its manufacture
JPS5481090A (en) Manufacture of solar battery
JPS5376752A (en) Production of semionductor device
JPS52146176A (en) Formation of electrode in semiconductor device
JPS5351964A (en) Selective growth method for semiconductor crystal
JPS5333084A (en) Silicon solar battery
JPS5380161A (en) Electrode formation of semiconductor
JPS5440073A (en) Film forming method
JPS538081A (en) Production of semiconductor device
JPS547867A (en) Manufacture for semiconductor device
JPS533785A (en) Thin film solar battery
JPS52117550A (en) Electrode formation method
JPS5329668A (en) Production of semiconductor device
JPS54977A (en) Manufacture for semiconductor device
JPS53118389A (en) Solar battery device and its manufacture
JPS5322382A (en) Production of dielectric isolating substrate
JPS53104159A (en) Impurity diffusing method
JPS53135266A (en) Production of semiconductor device
JPS5240986A (en) Process for production of semiconductor element