JPS5481090A - Manufacture of solar battery - Google Patents

Manufacture of solar battery

Info

Publication number
JPS5481090A
JPS5481090A JP14815877A JP14815877A JPS5481090A JP S5481090 A JPS5481090 A JP S5481090A JP 14815877 A JP14815877 A JP 14815877A JP 14815877 A JP14815877 A JP 14815877A JP S5481090 A JPS5481090 A JP S5481090A
Authority
JP
Japan
Prior art keywords
aluminum
layer
manufacture
solar battery
silicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP14815877A
Other languages
Japanese (ja)
Other versions
JPS5440911B2 (en
Inventor
Takeshi Saito
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Institute of Advanced Industrial Science and Technology AIST
Original Assignee
Agency of Industrial Science and Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agency of Industrial Science and Technology filed Critical Agency of Industrial Science and Technology
Priority to JP14815877A priority Critical patent/JPS5481090A/en
Publication of JPS5481090A publication Critical patent/JPS5481090A/en
Publication of JPS5440911B2 publication Critical patent/JPS5440911B2/ja
Granted legal-status Critical Current

Links

Classifications

    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Landscapes

  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Photovoltaic Devices (AREA)

Abstract

PURPOSE: To carry out formation of the junction and then formation of electrode in one process by forming the eutectic liquid layer of aluminum-silicon on the silicon substrate.
CONSTITUTION: The aluminum is deposited on n-type silicon substrate 1 to have the eutectic reaction growth. The silicon crystal growth layer and the aluminum surface layer formed through the solidification of the eutectic liquid layer are shown by 2' and 3' respectively. The aluminum layer on the surface is removed with grid- type electrode part 4, remaining.
COPYRIGHT: (C)1979,JPO&Japio
JP14815877A 1977-12-12 1977-12-12 Manufacture of solar battery Granted JPS5481090A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14815877A JPS5481090A (en) 1977-12-12 1977-12-12 Manufacture of solar battery

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14815877A JPS5481090A (en) 1977-12-12 1977-12-12 Manufacture of solar battery

Publications (2)

Publication Number Publication Date
JPS5481090A true JPS5481090A (en) 1979-06-28
JPS5440911B2 JPS5440911B2 (en) 1979-12-05

Family

ID=15446546

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14815877A Granted JPS5481090A (en) 1977-12-12 1977-12-12 Manufacture of solar battery

Country Status (1)

Country Link
JP (1) JPS5481090A (en)

Also Published As

Publication number Publication date
JPS5440911B2 (en) 1979-12-05

Similar Documents

Publication Publication Date Title
JPS5423386A (en) Manufacture of semiconductor device
JPS5481090A (en) Manufacture of solar battery
JPS53108389A (en) Manufacture for semiconductor device
JPS56137683A (en) Solar cell
JPS5389374A (en) Production of semiconductor device
JPS52124887A (en) Solar battery
JPS52124888A (en) Production of solar battery
JPS5333084A (en) Silicon solar battery
JPS5282087A (en) Production of solar cell
JPS5534470A (en) Production for solar battery
JPS5481092A (en) Manufacture of back field effect type solar battery
JPS5360171A (en) Electrode for silicon substrate and its production
JPS5351964A (en) Selective growth method for semiconductor crystal
JPS5436192A (en) Manufacture for semiconductor
JPS5286058A (en) Liquid phase epitaxial growth
JPS54107280A (en) Semiconductor integrated circuit unit
JPS57143873A (en) Manufacture of solar cell
JPS5564350A (en) Radioactive-ray receiving face
JPS5477085A (en) Production of solar batteries
JPS5387672A (en) Semiconductor device
JPS547867A (en) Manufacture for semiconductor device
JPS5334465A (en) Manufacture for semiconductor epitaxial grown layer
JPS53144690A (en) Production of semiconductor device
JPS5384585A (en) Solar cell
JPS5428566A (en) Manufacture of semiconductor device