JPS57143873A - Manufacture of solar cell - Google Patents
Manufacture of solar cellInfo
- Publication number
- JPS57143873A JPS57143873A JP56028420A JP2842081A JPS57143873A JP S57143873 A JPS57143873 A JP S57143873A JP 56028420 A JP56028420 A JP 56028420A JP 2842081 A JP2842081 A JP 2842081A JP S57143873 A JPS57143873 A JP S57143873A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- solar cell
- aluminum
- shaped
- eutectic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000000758 substrate Substances 0.000 abstract 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 3
- 229910052782 aluminium Inorganic materials 0.000 abstract 3
- 230000005496 eutectics Effects 0.000 abstract 3
- 229910052710 silicon Inorganic materials 0.000 abstract 3
- 239000010703 silicon Substances 0.000 abstract 3
- 239000007788 liquid Substances 0.000 abstract 2
- 239000007791 liquid phase Substances 0.000 abstract 2
- 229910052787 antimony Inorganic materials 0.000 abstract 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 abstract 1
- 238000005266 casting Methods 0.000 abstract 1
- 238000009792 diffusion process Methods 0.000 abstract 1
- 238000005530 etching Methods 0.000 abstract 1
- 229910052751 metal Inorganic materials 0.000 abstract 1
- 239000002184 metal Substances 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0236—Special surface textures
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photovoltaic Devices (AREA)
Abstract
PURPOSE:To obtain the solar cell having high efficiency by forming unevenness to the surface of a polycrystal silicon substrate. CONSTITUTION:An aluminum melted liquid is sprayed onto the surface of the N type silicon polycrystal substrate 1 shaped through a casting method, and innumerable aluminum metal grains 3 having several mum diameters are formed. The substrate 1 is held at a high temperature and a eutectic liquid phase 4 is shaped, and the substrate is eroded by the eutectic liquid phase. The substrate for the solar cell, the surface thereof has numerous minute unevennesses and to which a P-N junction 5 through the diffusion of aluminum is formed, is obtained by removing the eutectic layer 4 of the surface by a proper etching liquid. A grid-shaped electrode is shaped to the surface, an electrode metal is also evaporated onto the back, and the solar cell is acquired. Antimony is used for a P type silicon substrate in place of aluminum.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56028420A JPS57143873A (en) | 1981-03-02 | 1981-03-02 | Manufacture of solar cell |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56028420A JPS57143873A (en) | 1981-03-02 | 1981-03-02 | Manufacture of solar cell |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS57143873A true JPS57143873A (en) | 1982-09-06 |
| JPS6113395B2 JPS6113395B2 (en) | 1986-04-12 |
Family
ID=12248157
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56028420A Granted JPS57143873A (en) | 1981-03-02 | 1981-03-02 | Manufacture of solar cell |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57143873A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6088481A (en) * | 1983-10-20 | 1985-05-18 | Kanegafuchi Chem Ind Co Ltd | Solar battery |
| JPH03218684A (en) * | 1990-01-24 | 1991-09-26 | Hitachi Ltd | Solar cell element and manufacture thereof |
-
1981
- 1981-03-02 JP JP56028420A patent/JPS57143873A/en active Granted
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6088481A (en) * | 1983-10-20 | 1985-05-18 | Kanegafuchi Chem Ind Co Ltd | Solar battery |
| JPH03218684A (en) * | 1990-01-24 | 1991-09-26 | Hitachi Ltd | Solar cell element and manufacture thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6113395B2 (en) | 1986-04-12 |
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