JPS5466091A - Formation method of conductive path of semiconductor device - Google Patents

Formation method of conductive path of semiconductor device

Info

Publication number
JPS5466091A
JPS5466091A JP13289977A JP13289977A JPS5466091A JP S5466091 A JPS5466091 A JP S5466091A JP 13289977 A JP13289977 A JP 13289977A JP 13289977 A JP13289977 A JP 13289977A JP S5466091 A JPS5466091 A JP S5466091A
Authority
JP
Japan
Prior art keywords
substrate
film
layer
etching
conductive
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP13289977A
Other languages
Japanese (ja)
Inventor
Takeshi Suzuki
Hironobu Hatakeyama
Takashi Ishii
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP13289977A priority Critical patent/JPS5466091A/en
Publication of JPS5466091A publication Critical patent/JPS5466091A/en
Pending legal-status Critical Current

Links

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Weting (AREA)

Abstract

PURPOSE: To obtain a fine pattern at high efficiency in operation without causing side-etching by making mesa-etching easy to progress, by forming conductive paths, which are provided onto a semiconductor substrate, apart mutually from the substrate surface to the upper part.
CONSTITUTION: On N+-type GaAs substrate 1, N--type layer 2 is grown, and on it, P--type layer 3 is formed to generate a PN junction. Next, electrode 4 of desired size is vapor-deposited or plated on layer 3 through a photoengraving process, and the remaining surface of layer 3 is covered with lst resist film 7. Then, metal thin film 8 is vapor-deposeted, the conductive-path formation region on it is covered with the 2nd resist film 9, and conductive path 5 is adhered onto film 8 by plating. Next, film 9, and films 8 and 7 are removed sequentially, and mesa etching is done reaching even substrate 1, so that the elements can be obtained which have conductive paths 5 away from the surface 1 of its substrate.
COPYRIGHT: (C)1979,JPO&Japio
JP13289977A 1977-11-05 1977-11-05 Formation method of conductive path of semiconductor device Pending JPS5466091A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13289977A JPS5466091A (en) 1977-11-05 1977-11-05 Formation method of conductive path of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13289977A JPS5466091A (en) 1977-11-05 1977-11-05 Formation method of conductive path of semiconductor device

Publications (1)

Publication Number Publication Date
JPS5466091A true JPS5466091A (en) 1979-05-28

Family

ID=15092141

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13289977A Pending JPS5466091A (en) 1977-11-05 1977-11-05 Formation method of conductive path of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5466091A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5619636A (en) * 1979-07-26 1981-02-24 Nec Corp Integrated circuit semiconductor device
JPH0563098A (en) * 1991-09-05 1993-03-12 Matsushita Electric Ind Co Ltd Semiconductor device and manufacture thereof

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5619636A (en) * 1979-07-26 1981-02-24 Nec Corp Integrated circuit semiconductor device
JPH0563098A (en) * 1991-09-05 1993-03-12 Matsushita Electric Ind Co Ltd Semiconductor device and manufacture thereof

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