JPS5784168A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS5784168A JPS5784168A JP16035180A JP16035180A JPS5784168A JP S5784168 A JPS5784168 A JP S5784168A JP 16035180 A JP16035180 A JP 16035180A JP 16035180 A JP16035180 A JP 16035180A JP S5784168 A JPS5784168 A JP S5784168A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- semiconductor device
- etching
- integration
- constitution
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title abstract 4
- 229910001218 Gallium arsenide Inorganic materials 0.000 abstract 2
- 238000005530 etching Methods 0.000 abstract 2
- 230000010354 integration Effects 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- 229910000990 Ni alloy Inorganic materials 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 229920002120 photoresistant polymer Polymers 0.000 abstract 1
- 238000001020 plasma etching Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
- H01L29/812—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with a Schottky gate
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Electrodes Of Semiconductors (AREA)
- Junction Field-Effect Transistors (AREA)
Abstract
PURPOSE:To facilitate the use in high frequency and the integration of a semiconductor device by using two layer structure coated film comprising a Ta layer and an Al layer provided on the side of a semiconductor substrate as at least an electrode. CONSTITUTION:After an N type GaAs layer 2 is grown by epitaxial method on a semiinsulating GaAs substrate 1 said layer 2 is subjected to mesa etching, and then an Au-Ga-Ni alloy is provided on the mesa side part. After that, a Ta layer 3 and an Al layer 4 are evaporated over the entire surface, and then a Schottky-barrier electrode comprising a Ta-Al two layer structure film is formed on the central part by etching using a photoresist. With such constitution, it is possible to perform fine processing easilly by using plasma etching, and thereby the use in high frequency and the integration of a semiconductor device are facilitated.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP16035180A JPS5784168A (en) | 1980-11-13 | 1980-11-13 | Semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP16035180A JPS5784168A (en) | 1980-11-13 | 1980-11-13 | Semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5784168A true JPS5784168A (en) | 1982-05-26 |
Family
ID=15713093
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP16035180A Pending JPS5784168A (en) | 1980-11-13 | 1980-11-13 | Semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5784168A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59136974A (en) * | 1983-01-26 | 1984-08-06 | Nec Corp | Semiconductor device |
JPS6081859A (en) * | 1983-10-11 | 1985-05-09 | Matsushita Electric Ind Co Ltd | Schottky barrier semiconductor device |
-
1980
- 1980-11-13 JP JP16035180A patent/JPS5784168A/en active Pending
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59136974A (en) * | 1983-01-26 | 1984-08-06 | Nec Corp | Semiconductor device |
JPH029452B2 (en) * | 1983-01-26 | 1990-03-02 | Nippon Electric Co | |
JPS6081859A (en) * | 1983-10-11 | 1985-05-09 | Matsushita Electric Ind Co Ltd | Schottky barrier semiconductor device |
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