JPS5784168A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5784168A
JPS5784168A JP16035180A JP16035180A JPS5784168A JP S5784168 A JPS5784168 A JP S5784168A JP 16035180 A JP16035180 A JP 16035180A JP 16035180 A JP16035180 A JP 16035180A JP S5784168 A JPS5784168 A JP S5784168A
Authority
JP
Japan
Prior art keywords
layer
semiconductor device
etching
integration
constitution
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP16035180A
Other languages
Japanese (ja)
Inventor
Shunji Otani
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Electric Industries Ltd
Original Assignee
Sumitomo Electric Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Electric Industries Ltd filed Critical Sumitomo Electric Industries Ltd
Priority to JP16035180A priority Critical patent/JPS5784168A/en
Publication of JPS5784168A publication Critical patent/JPS5784168A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
    • H01L29/812—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with a Schottky gate

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Junction Field-Effect Transistors (AREA)

Abstract

PURPOSE:To facilitate the use in high frequency and the integration of a semiconductor device by using two layer structure coated film comprising a Ta layer and an Al layer provided on the side of a semiconductor substrate as at least an electrode. CONSTITUTION:After an N type GaAs layer 2 is grown by epitaxial method on a semiinsulating GaAs substrate 1 said layer 2 is subjected to mesa etching, and then an Au-Ga-Ni alloy is provided on the mesa side part. After that, a Ta layer 3 and an Al layer 4 are evaporated over the entire surface, and then a Schottky-barrier electrode comprising a Ta-Al two layer structure film is formed on the central part by etching using a photoresist. With such constitution, it is possible to perform fine processing easilly by using plasma etching, and thereby the use in high frequency and the integration of a semiconductor device are facilitated.
JP16035180A 1980-11-13 1980-11-13 Semiconductor device Pending JPS5784168A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16035180A JPS5784168A (en) 1980-11-13 1980-11-13 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16035180A JPS5784168A (en) 1980-11-13 1980-11-13 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS5784168A true JPS5784168A (en) 1982-05-26

Family

ID=15713093

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16035180A Pending JPS5784168A (en) 1980-11-13 1980-11-13 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5784168A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59136974A (en) * 1983-01-26 1984-08-06 Nec Corp Semiconductor device
JPS6081859A (en) * 1983-10-11 1985-05-09 Matsushita Electric Ind Co Ltd Schottky barrier semiconductor device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59136974A (en) * 1983-01-26 1984-08-06 Nec Corp Semiconductor device
JPH029452B2 (en) * 1983-01-26 1990-03-02 Nippon Electric Co
JPS6081859A (en) * 1983-10-11 1985-05-09 Matsushita Electric Ind Co Ltd Schottky barrier semiconductor device

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