JPS57120389A - Planar type semiconductor - Google Patents

Planar type semiconductor

Info

Publication number
JPS57120389A
JPS57120389A JP56005878A JP587881A JPS57120389A JP S57120389 A JPS57120389 A JP S57120389A JP 56005878 A JP56005878 A JP 56005878A JP 587881 A JP587881 A JP 587881A JP S57120389 A JPS57120389 A JP S57120389A
Authority
JP
Japan
Prior art keywords
film
opened
ion implantation
electrodes
resist
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP56005878A
Other languages
Japanese (ja)
Inventor
Akimichi Hojo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP56005878A priority Critical patent/JPS57120389A/en
Publication of JPS57120389A publication Critical patent/JPS57120389A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N52/00—Hall-effect devices
    • H10N52/01—Manufacture or treatment

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Formation Of Insulating Films (AREA)
  • Hall/Mr Elements (AREA)
  • Junction Field-Effect Transistors (AREA)

Abstract

PURPOSE:To obtain a stable and high quality semiconductor by selectively using a SiO2 film and a SiN film having different stress directions, moderating effects on GaAs crystal surface thereby removing by a dry etching an insulation layer in the predetermined region at the time of forming element electrodes. CONSTITUTION:A SiO2 film 2 is formed on the surface of an semi-insulative GaAs crystal substrate of (100) and a window is opened for ion implantation region by the photo etching method. The Si injection layer 4 is formed leaving a resist 3 on the film 2, and a SiN film 5 is formed after removing the resist film. Element electrodes are opened by the photo etching method and the Si injection layer 6 is formed by ion implanting Si<+>. An active layers 4a, 4b are formed by activating the ion implantation layer and by heat treatment. Au, Ta and Au are consecutively vapor deposites as ohmic electrodes in the element electrode region to make a GaAs hole element.
JP56005878A 1981-01-20 1981-01-20 Planar type semiconductor Pending JPS57120389A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56005878A JPS57120389A (en) 1981-01-20 1981-01-20 Planar type semiconductor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56005878A JPS57120389A (en) 1981-01-20 1981-01-20 Planar type semiconductor

Publications (1)

Publication Number Publication Date
JPS57120389A true JPS57120389A (en) 1982-07-27

Family

ID=11623159

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56005878A Pending JPS57120389A (en) 1981-01-20 1981-01-20 Planar type semiconductor

Country Status (1)

Country Link
JP (1) JPS57120389A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63229720A (en) * 1987-03-18 1988-09-26 Nec Corp Compound semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63229720A (en) * 1987-03-18 1988-09-26 Nec Corp Compound semiconductor device

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