JPS5469382A - Production of semiconductor device - Google Patents
Production of semiconductor deviceInfo
- Publication number
- JPS5469382A JPS5469382A JP13705577A JP13705577A JPS5469382A JP S5469382 A JPS5469382 A JP S5469382A JP 13705577 A JP13705577 A JP 13705577A JP 13705577 A JP13705577 A JP 13705577A JP S5469382 A JPS5469382 A JP S5469382A
- Authority
- JP
- Japan
- Prior art keywords
- film
- plating
- evaporation
- films
- bump
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/11—Manufacturing methods
Landscapes
- Weting (AREA)
Abstract
PURPOSE: To make Ti and Pt films in an oxide film step good and restore the interface damage between the substrate and the insulating film generated at an Al evaporation time by performing the Al evaporation for plating electrodes in the process before the Ti and Pt sputter evaporation process in the bump forming process.
CONSTITUTION: Al electrode 12 and SiO2 film 13 dependent upon CVD method are grown on field oxide film 11 provided on the semiconductor substrate, and a through- hole is opened in film 13. Next, Al film 17 is evaporated as a plating electrode throughout the surface, and damages are restored beforehand by heat treatment when there are no Ti and Pt. After that, mask 14 of a photo resistor film is provided to cause Ti film 15 and Pt film 16 to adhere onto film 17 by continuous sputtering. Next, films 15 and 16 in the part other than bump forming positions are removed by the lift-off method, and the surface is covered with resistor film 18 to form Au bump 19 by plating. After that, film 18 is removed, and protruded surplus of film 17 is removed by etching.
COPYRIGHT: (C)1979,JPO&Japio
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP52137055A JPS6059742B2 (en) | 1977-11-14 | 1977-11-14 | Semiconductor device and its manufacturing method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP52137055A JPS6059742B2 (en) | 1977-11-14 | 1977-11-14 | Semiconductor device and its manufacturing method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5469382A true JPS5469382A (en) | 1979-06-04 |
| JPS6059742B2 JPS6059742B2 (en) | 1985-12-26 |
Family
ID=15189818
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP52137055A Expired JPS6059742B2 (en) | 1977-11-14 | 1977-11-14 | Semiconductor device and its manufacturing method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6059742B2 (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5932154A (en) * | 1982-08-18 | 1984-02-21 | Seiko Instr & Electronics Ltd | Forming method for solder bump |
| JPS6396943A (en) * | 1986-10-13 | 1988-04-27 | Sanyo Electric Co Ltd | Manufacture of semiconductor device |
| JPH0290622A (en) * | 1988-09-28 | 1990-03-30 | Seiko Instr Inc | Gold bump forming method |
-
1977
- 1977-11-14 JP JP52137055A patent/JPS6059742B2/en not_active Expired
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5932154A (en) * | 1982-08-18 | 1984-02-21 | Seiko Instr & Electronics Ltd | Forming method for solder bump |
| JPH0226780B2 (en) * | 1982-08-18 | 1990-06-12 | Seiko Instr & Electronics | |
| JPS6396943A (en) * | 1986-10-13 | 1988-04-27 | Sanyo Electric Co Ltd | Manufacture of semiconductor device |
| JPH0290622A (en) * | 1988-09-28 | 1990-03-30 | Seiko Instr Inc | Gold bump forming method |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6059742B2 (en) | 1985-12-26 |
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