JPS57104224A - Forming method of insulating thin film - Google Patents

Forming method of insulating thin film

Info

Publication number
JPS57104224A
JPS57104224A JP55180395A JP18039580A JPS57104224A JP S57104224 A JPS57104224 A JP S57104224A JP 55180395 A JP55180395 A JP 55180395A JP 18039580 A JP18039580 A JP 18039580A JP S57104224 A JPS57104224 A JP S57104224A
Authority
JP
Japan
Prior art keywords
substrate
substrate temperature
thin film
maintained
effect
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP55180395A
Other languages
Japanese (ja)
Inventor
Sukeyoshi Tsunekawa
Yoshio Honma
Hiroshi Morizaki
Yukiyoshi Harada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP55180395A priority Critical patent/JPS57104224A/en
Publication of JPS57104224A publication Critical patent/JPS57104224A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02164—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon oxide, e.g. SiO2
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • C23C14/541—Heating or cooling of the substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02266—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by physical ablation of a target, e.g. sputtering, reactive sputtering, physical vapour deposition or pulsed laser deposition

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Materials Engineering (AREA)
  • Optics & Photonics (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)

Abstract

PURPOSE:To reduce damage affected on a semiconductor element even if a negative voltage is induced in a substrate during thin film formation by a method wherein in the formation of an insulating thin film by a high frequency sputtering method, a temperature of a substrate is maintained at a specific value. CONSTITUTION:According to the experimental result on the effect of a substrate temperature on a high frequency sputtering method, when the substrate temperature is maintained to be 200 deg.C or below, a variation in a flat band voltage after formation of an SiO2 film is high, but because of restoration of the flat band voltage to an initial value through heat-treatment, a substrate temperature should be maintained at or below approximately 250 deg.C to minimize an effect on a characteristics of an element. On the other hand, because an etching speed is heightened and the film is degraded when the substrate temperature is lowered, a lowest limit of the substrate temperature should be set at or above 150 deg.C that is within a range in whcih an effect on a substrate bias by a fine configuration of an SiO2 film is not canceled.
JP55180395A 1980-12-22 1980-12-22 Forming method of insulating thin film Pending JPS57104224A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55180395A JPS57104224A (en) 1980-12-22 1980-12-22 Forming method of insulating thin film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55180395A JPS57104224A (en) 1980-12-22 1980-12-22 Forming method of insulating thin film

Publications (1)

Publication Number Publication Date
JPS57104224A true JPS57104224A (en) 1982-06-29

Family

ID=16082481

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55180395A Pending JPS57104224A (en) 1980-12-22 1980-12-22 Forming method of insulating thin film

Country Status (1)

Country Link
JP (1) JPS57104224A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60198730A (en) * 1984-03-22 1985-10-08 Sanyo Electric Co Ltd Forming method of thin-film
JPS62166530A (en) * 1986-01-20 1987-07-23 Toshiba Corp Manufacture of semiconductor device
JPH0193172A (en) * 1987-10-05 1989-04-12 Matsushita Electric Ind Co Ltd Thin-film transistor

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60198730A (en) * 1984-03-22 1985-10-08 Sanyo Electric Co Ltd Forming method of thin-film
JPS62166530A (en) * 1986-01-20 1987-07-23 Toshiba Corp Manufacture of semiconductor device
JPH0193172A (en) * 1987-10-05 1989-04-12 Matsushita Electric Ind Co Ltd Thin-film transistor

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