JPS57197834A - Manufacture of insulated and isolated substrate - Google Patents

Manufacture of insulated and isolated substrate

Info

Publication number
JPS57197834A
JPS57197834A JP8368681A JP8368681A JPS57197834A JP S57197834 A JPS57197834 A JP S57197834A JP 8368681 A JP8368681 A JP 8368681A JP 8368681 A JP8368681 A JP 8368681A JP S57197834 A JPS57197834 A JP S57197834A
Authority
JP
Japan
Prior art keywords
substrate
crystal
end part
dioxide
polycrystalline
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP8368681A
Other languages
Japanese (ja)
Other versions
JPS6226182B2 (en
Inventor
Takanobu Satou
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
TOUKOU KK
Toko Inc
Original Assignee
TOUKOU KK
Toko Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by TOUKOU KK, Toko Inc filed Critical TOUKOU KK
Priority to JP8368681A priority Critical patent/JPS57197834A/en
Publication of JPS57197834A publication Critical patent/JPS57197834A/en
Publication of JPS6226182B2 publication Critical patent/JPS6226182B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers

Abstract

PURPOSE:To prevent the growth of abnormal rise on the end part of polycrystalline silicon for the elimination of cracks or chip of a substrate, by forming a slant on the end part of a single-crystal silicon substrate by anisotropic etching. CONSTITUTION:An Si dioxide film 21 is formed on the surface of the single- crystal Si substrate 20 to remove a V-shaped groove part of the Si dioxide film 21 with the surface of the substrate exposed for the etching of the single-crystal Si substrate 20 with the Si dioxide film 21 as a mask. Thus, a V-shaped groove 22 is formed by the anisotropy of crystal axis threat with the end part of the single-crystal Si substrate 20 etched for slant. Then, Si dioxide covers again the entire surface thereon to form the first polycrystalline Si film 23a thereon. Thereafter, after the removal of the Si dioxide on the end part, the second polycrystalline Si layer 23b is formed.
JP8368681A 1981-05-29 1981-05-29 Manufacture of insulated and isolated substrate Granted JPS57197834A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8368681A JPS57197834A (en) 1981-05-29 1981-05-29 Manufacture of insulated and isolated substrate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8368681A JPS57197834A (en) 1981-05-29 1981-05-29 Manufacture of insulated and isolated substrate

Publications (2)

Publication Number Publication Date
JPS57197834A true JPS57197834A (en) 1982-12-04
JPS6226182B2 JPS6226182B2 (en) 1987-06-08

Family

ID=13809369

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8368681A Granted JPS57197834A (en) 1981-05-29 1981-05-29 Manufacture of insulated and isolated substrate

Country Status (1)

Country Link
JP (1) JPS57197834A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4925809A (en) * 1987-05-23 1990-05-15 Osaka Titanium Co., Ltd. Semiconductor wafer and epitaxial growth on the semiconductor wafer with autodoping control and manufacturing method therefor
US5225235A (en) * 1987-05-18 1993-07-06 Osaka Titanium Co., Ltd. Semiconductor wafer and manufacturing method therefor
WO2023199656A1 (en) * 2022-04-15 2023-10-19 信越半導体株式会社 Method for producing polysilicon wafer

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5029423U (en) * 1973-07-09 1975-04-03
JPS5386775A (en) * 1976-11-08 1978-07-31 Raychem Sa Nv Thermal recovery hollow part andits using method and its making method

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5029423U (en) * 1973-07-09 1975-04-03
JPS5386775A (en) * 1976-11-08 1978-07-31 Raychem Sa Nv Thermal recovery hollow part andits using method and its making method

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5225235A (en) * 1987-05-18 1993-07-06 Osaka Titanium Co., Ltd. Semiconductor wafer and manufacturing method therefor
US4925809A (en) * 1987-05-23 1990-05-15 Osaka Titanium Co., Ltd. Semiconductor wafer and epitaxial growth on the semiconductor wafer with autodoping control and manufacturing method therefor
WO2023199656A1 (en) * 2022-04-15 2023-10-19 信越半導体株式会社 Method for producing polysilicon wafer

Also Published As

Publication number Publication date
JPS6226182B2 (en) 1987-06-08

Similar Documents

Publication Publication Date Title
AU6180690A (en) Method of preparing silicon carbide surfaces for crystal growth
AU2590699A (en) Crystal ion-slicing of single-crystal films
KR880014691A (en) Manufacturing Method of Semiconductor Device
JPS57197834A (en) Manufacture of insulated and isolated substrate
JPS57124440A (en) Compound etching method
JPS6430245A (en) Manufacture of semiconductor device
JPS57100733A (en) Etching method for semiconductor substrate
JPS5688356A (en) Manufacture of memory cell
JPS5530844A (en) Semiconductor device and its manufacturing method
JPS57204146A (en) Manufacture of semiconductor device
JPS57148344A (en) Manufacturing equipment for semiconductor
JPS53146300A (en) Production of silicon carbide substrate
JPS57120672A (en) Plasma etching method
JPS5243369A (en) Flat etching method for silicon
JPS57109353A (en) Semiconductor device
EP0067738A3 (en) Method of reducing encroachment in a semiconductor device
JPS5742143A (en) Manufacture of semiconductor device
JPS57138162A (en) Manufacture of semiconductor device
JPS5783042A (en) Manufacture of semiconductor device
SE8504828D0 (en) INFRAROD DETECTOR
JPS57104224A (en) Forming method of insulating thin film
JPS57196794A (en) Epitaxial growth method
JPS5527680A (en) Manufacture of dielectric insulating and separating substrate
JPS5575221A (en) Manufacturing semiconductor
JPS57196793A (en) Epitaxial growth method