JPS57197834A - Manufacture of insulated and isolated substrate - Google Patents
Manufacture of insulated and isolated substrateInfo
- Publication number
- JPS57197834A JPS57197834A JP8368681A JP8368681A JPS57197834A JP S57197834 A JPS57197834 A JP S57197834A JP 8368681 A JP8368681 A JP 8368681A JP 8368681 A JP8368681 A JP 8368681A JP S57197834 A JPS57197834 A JP S57197834A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- crystal
- end part
- dioxide
- polycrystalline
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Element Separation (AREA)
- Weting (AREA)
- Recrystallisation Techniques (AREA)
- Local Oxidation Of Silicon (AREA)
Abstract
PURPOSE:To prevent the growth of abnormal rise on the end part of polycrystalline silicon for the elimination of cracks or chip of a substrate, by forming a slant on the end part of a single-crystal silicon substrate by anisotropic etching. CONSTITUTION:An Si dioxide film 21 is formed on the surface of the single- crystal Si substrate 20 to remove a V-shaped groove part of the Si dioxide film 21 with the surface of the substrate exposed for the etching of the single-crystal Si substrate 20 with the Si dioxide film 21 as a mask. Thus, a V-shaped groove 22 is formed by the anisotropy of crystal axis threat with the end part of the single-crystal Si substrate 20 etched for slant. Then, Si dioxide covers again the entire surface thereon to form the first polycrystalline Si film 23a thereon. Thereafter, after the removal of the Si dioxide on the end part, the second polycrystalline Si layer 23b is formed.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8368681A JPS57197834A (en) | 1981-05-29 | 1981-05-29 | Manufacture of insulated and isolated substrate |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8368681A JPS57197834A (en) | 1981-05-29 | 1981-05-29 | Manufacture of insulated and isolated substrate |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS57197834A true JPS57197834A (en) | 1982-12-04 |
JPS6226182B2 JPS6226182B2 (en) | 1987-06-08 |
Family
ID=13809369
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP8368681A Granted JPS57197834A (en) | 1981-05-29 | 1981-05-29 | Manufacture of insulated and isolated substrate |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS57197834A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4925809A (en) * | 1987-05-23 | 1990-05-15 | Osaka Titanium Co., Ltd. | Semiconductor wafer and epitaxial growth on the semiconductor wafer with autodoping control and manufacturing method therefor |
US5225235A (en) * | 1987-05-18 | 1993-07-06 | Osaka Titanium Co., Ltd. | Semiconductor wafer and manufacturing method therefor |
WO2023199656A1 (en) * | 2022-04-15 | 2023-10-19 | 信越半導体株式会社 | Method for producing polysilicon wafer |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5029423U (en) * | 1973-07-09 | 1975-04-03 | ||
JPS5386775A (en) * | 1976-11-08 | 1978-07-31 | Raychem Sa Nv | Thermal recovery hollow part andits using method and its making method |
-
1981
- 1981-05-29 JP JP8368681A patent/JPS57197834A/en active Granted
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5029423U (en) * | 1973-07-09 | 1975-04-03 | ||
JPS5386775A (en) * | 1976-11-08 | 1978-07-31 | Raychem Sa Nv | Thermal recovery hollow part andits using method and its making method |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5225235A (en) * | 1987-05-18 | 1993-07-06 | Osaka Titanium Co., Ltd. | Semiconductor wafer and manufacturing method therefor |
US4925809A (en) * | 1987-05-23 | 1990-05-15 | Osaka Titanium Co., Ltd. | Semiconductor wafer and epitaxial growth on the semiconductor wafer with autodoping control and manufacturing method therefor |
WO2023199656A1 (en) * | 2022-04-15 | 2023-10-19 | 信越半導体株式会社 | Method for producing polysilicon wafer |
Also Published As
Publication number | Publication date |
---|---|
JPS6226182B2 (en) | 1987-06-08 |
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