SE8504828D0 - INFRAROD DETECTOR - Google Patents

INFRAROD DETECTOR

Info

Publication number
SE8504828D0
SE8504828D0 SE8504828A SE8504828A SE8504828D0 SE 8504828 D0 SE8504828 D0 SE 8504828D0 SE 8504828 A SE8504828 A SE 8504828A SE 8504828 A SE8504828 A SE 8504828A SE 8504828 D0 SE8504828 D0 SE 8504828D0
Authority
SE
Sweden
Prior art keywords
layer
telluride
cadmium
substrate
infrarod
Prior art date
Application number
SE8504828A
Other languages
Swedish (sv)
Inventor
M J Bevan
S P Singh
A W Gurnell
L K Nicholson
M J Hyliands
Original Assignee
Marconi Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Marconi Co Ltd filed Critical Marconi Co Ltd
Publication of SE8504828D0 publication Critical patent/SE8504828D0/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30604—Chemical etching
    • H01L21/30612—Etching of AIIIBV compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
    • H01L21/46—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428
    • H01L21/461—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/465—Chemical or electrical treatment, e.g. electrolytic etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/0296—Inorganic materials including, apart from doping material or other impurities, only AIIBVI compounds, e.g. CdS, ZnS, HgCdTe
    • H01L31/02966—Inorganic materials including, apart from doping material or other impurities, only AIIBVI compounds, e.g. CdS, ZnS, HgCdTe including ternary compounds, e.g. HgCdTe
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1828—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe
    • H01L31/1832—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe comprising ternary compounds, e.g. Hg Cd Te

Abstract

A cadmium mercury telluride (C.M.T.) layer (5) is epitaxially grown on a substrate (1, 2) of, for example, cadmium telluride. The substrate (3) is subsequently etched away with a mixture of nitric, hydrofluoric and lactic acids. A thin barrier layer (3) of mercury telluride is provided which is not attacked by the above etching solution. This barrier layer is removed by polishing to leave an optically flat C.M.T. layer which may incorporate a cadmium telluride passivating layer on its surface. <IMAGE>
SE8504828A 1983-09-13 1985-10-16 INFRAROD DETECTOR SE8504828D0 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB8324512 1983-09-13

Publications (1)

Publication Number Publication Date
SE8504828D0 true SE8504828D0 (en) 1985-10-16

Family

ID=10548717

Family Applications (1)

Application Number Title Priority Date Filing Date
SE8504828A SE8504828D0 (en) 1983-09-13 1985-10-16 INFRAROD DETECTOR

Country Status (8)

Country Link
DE (1) DE3447954A1 (en)
DK (1) DK436984A (en)
FR (1) FR2571896B1 (en)
GB (1) GB2165089B (en)
IT (1) IT8567524A0 (en)
NL (1) NL8415005A (en)
NO (1) NO843614L (en)
SE (1) SE8504828D0 (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2833757B1 (en) * 2001-12-13 2004-11-05 Commissariat Energie Atomique LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING SUCH A DEVICE
CN115197705B (en) * 2022-05-30 2023-08-15 北京智创芯源科技有限公司 Etching solution and thinning method of tellurium-cadmium-mercury infrared focal plane hybrid chip

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL6910274A (en) * 1969-07-04 1971-01-06
US4037311A (en) * 1976-07-14 1977-07-26 U.S. Philips Corporation Methods of manufacturing infra-red detector elements
GB2027986B (en) * 1978-07-31 1983-01-19 Philips Electronic Associated Infra-red detectors
GB2027556B (en) * 1978-07-31 1983-01-19 Philips Electronic Associated Manufacturing infra-red detectors

Also Published As

Publication number Publication date
DK436984A (en) 1985-07-15
DE3447954A1 (en) 1987-01-02
NL8415005A (en) 1986-07-01
FR2571896B1 (en) 1988-07-22
GB2165089A (en) 1986-04-03
GB2165089B (en) 1987-06-03
FR2571896A1 (en) 1986-04-18
IT8567524A0 (en) 1985-06-06
NO843614L (en) 1986-06-23

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