JPS5436185A - Etching method of gaas system compound semiconductor crystal - Google Patents

Etching method of gaas system compound semiconductor crystal

Info

Publication number
JPS5436185A
JPS5436185A JP10169877A JP10169877A JPS5436185A JP S5436185 A JPS5436185 A JP S5436185A JP 10169877 A JP10169877 A JP 10169877A JP 10169877 A JP10169877 A JP 10169877A JP S5436185 A JPS5436185 A JP S5436185A
Authority
JP
Japan
Prior art keywords
compound semiconductor
etching method
semiconductor crystal
system compound
gaas system
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10169877A
Other languages
Japanese (ja)
Inventor
Takashi Udagawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP10169877A priority Critical patent/JPS5436185A/en
Publication of JPS5436185A publication Critical patent/JPS5436185A/en
Pending legal-status Critical Current

Links

Landscapes

  • Weting (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Led Devices (AREA)

Abstract

PURPOSE: To etch GaAs system crystal without using special tool to obtain required etched section with small etching speed.
COPYRIGHT: (C)1979,JPO&Japio
JP10169877A 1977-08-26 1977-08-26 Etching method of gaas system compound semiconductor crystal Pending JPS5436185A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10169877A JPS5436185A (en) 1977-08-26 1977-08-26 Etching method of gaas system compound semiconductor crystal

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10169877A JPS5436185A (en) 1977-08-26 1977-08-26 Etching method of gaas system compound semiconductor crystal

Publications (1)

Publication Number Publication Date
JPS5436185A true JPS5436185A (en) 1979-03-16

Family

ID=14307535

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10169877A Pending JPS5436185A (en) 1977-08-26 1977-08-26 Etching method of gaas system compound semiconductor crystal

Country Status (1)

Country Link
JP (1) JPS5436185A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59222935A (en) * 1983-06-01 1984-12-14 Matsushita Electric Ind Co Ltd Manufacture of gaas semiconductor device
JP2871857B2 (en) * 1993-03-25 1999-03-17 ワトキンズ‐ジョンソン カンパニー Method for manufacturing group III-V compound semiconductor device using selective etching
US6093657A (en) * 1996-05-20 2000-07-25 Nec Corporation Fabrication process of semiconductor device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59222935A (en) * 1983-06-01 1984-12-14 Matsushita Electric Ind Co Ltd Manufacture of gaas semiconductor device
JP2871857B2 (en) * 1993-03-25 1999-03-17 ワトキンズ‐ジョンソン カンパニー Method for manufacturing group III-V compound semiconductor device using selective etching
US6093657A (en) * 1996-05-20 2000-07-25 Nec Corporation Fabrication process of semiconductor device

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