JPS5436185A - Etching method of gaas system compound semiconductor crystal - Google Patents
Etching method of gaas system compound semiconductor crystalInfo
- Publication number
- JPS5436185A JPS5436185A JP10169877A JP10169877A JPS5436185A JP S5436185 A JPS5436185 A JP S5436185A JP 10169877 A JP10169877 A JP 10169877A JP 10169877 A JP10169877 A JP 10169877A JP S5436185 A JPS5436185 A JP S5436185A
- Authority
- JP
- Japan
- Prior art keywords
- compound semiconductor
- etching method
- semiconductor crystal
- system compound
- gaas system
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Weting (AREA)
- Junction Field-Effect Transistors (AREA)
- Led Devices (AREA)
Abstract
PURPOSE: To etch GaAs system crystal without using special tool to obtain required etched section with small etching speed.
COPYRIGHT: (C)1979,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10169877A JPS5436185A (en) | 1977-08-26 | 1977-08-26 | Etching method of gaas system compound semiconductor crystal |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10169877A JPS5436185A (en) | 1977-08-26 | 1977-08-26 | Etching method of gaas system compound semiconductor crystal |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5436185A true JPS5436185A (en) | 1979-03-16 |
Family
ID=14307535
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP10169877A Pending JPS5436185A (en) | 1977-08-26 | 1977-08-26 | Etching method of gaas system compound semiconductor crystal |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5436185A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59222935A (en) * | 1983-06-01 | 1984-12-14 | Matsushita Electric Ind Co Ltd | Manufacture of gaas semiconductor device |
JP2871857B2 (en) * | 1993-03-25 | 1999-03-17 | ワトキンズ‐ジョンソン カンパニー | Method for manufacturing group III-V compound semiconductor device using selective etching |
US6093657A (en) * | 1996-05-20 | 2000-07-25 | Nec Corporation | Fabrication process of semiconductor device |
-
1977
- 1977-08-26 JP JP10169877A patent/JPS5436185A/en active Pending
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59222935A (en) * | 1983-06-01 | 1984-12-14 | Matsushita Electric Ind Co Ltd | Manufacture of gaas semiconductor device |
JP2871857B2 (en) * | 1993-03-25 | 1999-03-17 | ワトキンズ‐ジョンソン カンパニー | Method for manufacturing group III-V compound semiconductor device using selective etching |
US6093657A (en) * | 1996-05-20 | 2000-07-25 | Nec Corporation | Fabrication process of semiconductor device |
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