Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
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Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co LtdfiledCriticalToshiba Corp
Priority to JP7614277ApriorityCriticalpatent/JPS5411675A/en
Publication of JPS5411675ApublicationCriticalpatent/JPS5411675A/en
PURPOSE: To correctly etch the surface layer extremely thin of GaAs group compound semiconductor crystal, without using any precise and special tool to obtain required cross section.
COPYRIGHT: (C)1979,JPO&Japio
JP7614277A1977-06-281977-06-28Etching method of gaas group compound semiconductor crystal
PendingJPS5411675A
(en)