JPS56162839A - Silicon etchant and etching method for silicon single crystal using the same - Google Patents
Silicon etchant and etching method for silicon single crystal using the sameInfo
- Publication number
- JPS56162839A JPS56162839A JP6676980A JP6676980A JPS56162839A JP S56162839 A JPS56162839 A JP S56162839A JP 6676980 A JP6676980 A JP 6676980A JP 6676980 A JP6676980 A JP 6676980A JP S56162839 A JPS56162839 A JP S56162839A
- Authority
- JP
- Japan
- Prior art keywords
- silicon
- etchant
- plane
- same
- single crystal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
Abstract
PURPOSE:To obtain a flat (100) plane in an anisotropic etching for a silicon sigle crystal by adding a surfactant to an etchant. CONSTITUTION:An oxidized film is formed on an Si single crystalline substrate having a (100) plane, a rectangular window such as a gate of an MOSFET is opened at the film, the (100) plane is exposed, and is etched. An etchant employs an aqueous ammonia saturated solution, and 0.01vol% of surfactant is mixed with the aqueous solution. Thus, it can eliminate the projection generated on the etching surface to form a flat etching surface.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP6676980A JPS56162839A (en) | 1980-05-19 | 1980-05-19 | Silicon etchant and etching method for silicon single crystal using the same |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP6676980A JPS56162839A (en) | 1980-05-19 | 1980-05-19 | Silicon etchant and etching method for silicon single crystal using the same |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS56162839A true JPS56162839A (en) | 1981-12-15 |
JPH0243333B2 JPH0243333B2 (en) | 1990-09-28 |
Family
ID=13325408
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP6676980A Granted JPS56162839A (en) | 1980-05-19 | 1980-05-19 | Silicon etchant and etching method for silicon single crystal using the same |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS56162839A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5855323A (en) * | 1981-09-26 | 1983-04-01 | Toshiba Corp | Etching solution for silicon and silicon oxide film |
KR100612985B1 (en) * | 1998-03-12 | 2006-10-31 | 삼성전자주식회사 | Manufacturing Method Of Liquid Crystal Display |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS50134770A (en) * | 1974-04-15 | 1975-10-25 | ||
JPS50147281A (en) * | 1974-05-15 | 1975-11-26 |
-
1980
- 1980-05-19 JP JP6676980A patent/JPS56162839A/en active Granted
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS50134770A (en) * | 1974-04-15 | 1975-10-25 | ||
JPS50147281A (en) * | 1974-05-15 | 1975-11-26 |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5855323A (en) * | 1981-09-26 | 1983-04-01 | Toshiba Corp | Etching solution for silicon and silicon oxide film |
KR100612985B1 (en) * | 1998-03-12 | 2006-10-31 | 삼성전자주식회사 | Manufacturing Method Of Liquid Crystal Display |
Also Published As
Publication number | Publication date |
---|---|
JPH0243333B2 (en) | 1990-09-28 |
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