JPS6445139A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS6445139A
JPS6445139A JP20270687A JP20270687A JPS6445139A JP S6445139 A JPS6445139 A JP S6445139A JP 20270687 A JP20270687 A JP 20270687A JP 20270687 A JP20270687 A JP 20270687A JP S6445139 A JPS6445139 A JP S6445139A
Authority
JP
Japan
Prior art keywords
single crystal
substrate
silicon
oxide film
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP20270687A
Other languages
Japanese (ja)
Inventor
Takashi Sato
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Original Assignee
Seiko Epson Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp filed Critical Seiko Epson Corp
Priority to JP20270687A priority Critical patent/JPS6445139A/en
Publication of JPS6445139A publication Critical patent/JPS6445139A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE:To obtain a single crystal silicon layer having a high quality over a large area, by using an epitaxially grown single crystal silicon substrate on a single crystal silicon substrate as a silicon layer on an SOI substrate. CONSTITUTION:A silicon oxide film 2 is formed on a single crystal silicon substrate 1 by thermal oxidation method. Then, a resist layer 3 is formed, and a pattern is transferred. After the silicon oxide film 2 is etched, the resist layer 3 is removed. Then, a silicon layer 4 is epitaxially grown on the substrate 1, which is exposed by patterning, by a CVD method. A silicon oxide film 5 including Al is grown on the silicon layer 4 and on the exposed surface of the silicon oxide film 2. The silicon substrate 1 is removed by using one of or the combination of an etching method, a mechanical polishing method and a chemical mechanical method. Thus, the single crystal silicon layer having a high quality can be obtained over a large area.
JP20270687A 1987-08-14 1987-08-14 Manufacture of semiconductor device Pending JPS6445139A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP20270687A JPS6445139A (en) 1987-08-14 1987-08-14 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP20270687A JPS6445139A (en) 1987-08-14 1987-08-14 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS6445139A true JPS6445139A (en) 1989-02-17

Family

ID=16461805

Family Applications (1)

Application Number Title Priority Date Filing Date
JP20270687A Pending JPS6445139A (en) 1987-08-14 1987-08-14 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS6445139A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100569881B1 (en) * 2004-08-31 2006-04-11 한국과학기술원 Method for Transfer of High-Quality Thin Silicon Film Using Epitaxial Silicide Layer

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100569881B1 (en) * 2004-08-31 2006-04-11 한국과학기술원 Method for Transfer of High-Quality Thin Silicon Film Using Epitaxial Silicide Layer

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