JPS6445139A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS6445139A JPS6445139A JP20270687A JP20270687A JPS6445139A JP S6445139 A JPS6445139 A JP S6445139A JP 20270687 A JP20270687 A JP 20270687A JP 20270687 A JP20270687 A JP 20270687A JP S6445139 A JPS6445139 A JP S6445139A
- Authority
- JP
- Japan
- Prior art keywords
- single crystal
- substrate
- silicon
- oxide film
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
PURPOSE:To obtain a single crystal silicon layer having a high quality over a large area, by using an epitaxially grown single crystal silicon substrate on a single crystal silicon substrate as a silicon layer on an SOI substrate. CONSTITUTION:A silicon oxide film 2 is formed on a single crystal silicon substrate 1 by thermal oxidation method. Then, a resist layer 3 is formed, and a pattern is transferred. After the silicon oxide film 2 is etched, the resist layer 3 is removed. Then, a silicon layer 4 is epitaxially grown on the substrate 1, which is exposed by patterning, by a CVD method. A silicon oxide film 5 including Al is grown on the silicon layer 4 and on the exposed surface of the silicon oxide film 2. The silicon substrate 1 is removed by using one of or the combination of an etching method, a mechanical polishing method and a chemical mechanical method. Thus, the single crystal silicon layer having a high quality can be obtained over a large area.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP20270687A JPS6445139A (en) | 1987-08-14 | 1987-08-14 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP20270687A JPS6445139A (en) | 1987-08-14 | 1987-08-14 | Manufacture of semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6445139A true JPS6445139A (en) | 1989-02-17 |
Family
ID=16461805
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP20270687A Pending JPS6445139A (en) | 1987-08-14 | 1987-08-14 | Manufacture of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6445139A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100569881B1 (en) * | 2004-08-31 | 2006-04-11 | 한국과학기술원 | Method for Transfer of High-Quality Thin Silicon Film Using Epitaxial Silicide Layer |
-
1987
- 1987-08-14 JP JP20270687A patent/JPS6445139A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100569881B1 (en) * | 2004-08-31 | 2006-04-11 | 한국과학기술원 | Method for Transfer of High-Quality Thin Silicon Film Using Epitaxial Silicide Layer |
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