JPS53146300A - Production of silicon carbide substrate - Google Patents

Production of silicon carbide substrate

Info

Publication number
JPS53146300A
JPS53146300A JP6248977A JP6248977A JPS53146300A JP S53146300 A JPS53146300 A JP S53146300A JP 6248977 A JP6248977 A JP 6248977A JP 6248977 A JP6248977 A JP 6248977A JP S53146300 A JPS53146300 A JP S53146300A
Authority
JP
Japan
Prior art keywords
production
silicon carbide
carbide substrate
sic
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP6248977A
Other languages
Japanese (ja)
Inventor
Takeshi Sakurai
Toshiki Inooku
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to JP6248977A priority Critical patent/JPS53146300A/en
Publication of JPS53146300A publication Critical patent/JPS53146300A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE: To produce a SiC semiconductor material of large area with good reproducibility by coating the surface of a SiC thin film formed on a Si substrate with a metal or resin and removing the Si substrate by dissolution after which a SiC epitaxial layer is formed on the surface of the SiC thin film.
COPYRIGHT: (C)1978,JPO&Japio
JP6248977A 1977-05-25 1977-05-25 Production of silicon carbide substrate Pending JPS53146300A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6248977A JPS53146300A (en) 1977-05-25 1977-05-25 Production of silicon carbide substrate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6248977A JPS53146300A (en) 1977-05-25 1977-05-25 Production of silicon carbide substrate

Publications (1)

Publication Number Publication Date
JPS53146300A true JPS53146300A (en) 1978-12-20

Family

ID=13201627

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6248977A Pending JPS53146300A (en) 1977-05-25 1977-05-25 Production of silicon carbide substrate

Country Status (1)

Country Link
JP (1) JPS53146300A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4983538A (en) * 1987-11-20 1991-01-08 Fujitsu Limited Method for fabricating a silicon carbide substrate
JP2002338395A (en) * 2001-05-10 2002-11-27 Hoya Corp Compound crystal and method for producing the same
CN103043606A (en) * 2012-12-06 2013-04-17 中国电子科技集团公司第五十五研究所 Method for machining large-size and high-depth-to-width ratio three-dimensional structure for SiC material
WO2024029217A1 (en) * 2022-08-03 2024-02-08 信越半導体株式会社 Method for manufacturing 3c-sic laminated substrate, 3c-sic laminated substrate, and 3c-sic independent substrate

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4983538A (en) * 1987-11-20 1991-01-08 Fujitsu Limited Method for fabricating a silicon carbide substrate
JP2002338395A (en) * 2001-05-10 2002-11-27 Hoya Corp Compound crystal and method for producing the same
CN103043606A (en) * 2012-12-06 2013-04-17 中国电子科技集团公司第五十五研究所 Method for machining large-size and high-depth-to-width ratio three-dimensional structure for SiC material
WO2024029217A1 (en) * 2022-08-03 2024-02-08 信越半導体株式会社 Method for manufacturing 3c-sic laminated substrate, 3c-sic laminated substrate, and 3c-sic independent substrate

Similar Documents

Publication Publication Date Title
JPS57204133A (en) Manufacture of semiconductor integrated circuit
JPS5320767A (en) X-ray mask supporting underlayer and its production
JPS53146300A (en) Production of silicon carbide substrate
JPS5247673A (en) Process for production of silicon crystal film
JPS53108389A (en) Manufacture for semiconductor device
JPS53149194A (en) Coating method for graphite substrate with silicon carbide
JPS53146299A (en) Production of silicon carbide substrate
JPS52117558A (en) Soft x-ray exposure mask and its manufacturing method
JPS5381069A (en) Production of susceptor in cvd device
JPS5512735A (en) Semiconductor device
JPS52130575A (en) Semiconductor device and its preparation
JPS543473A (en) Manufacture of semiconductor device
JPS5353280A (en) Manufacture for semiconductor device
JPS53139476A (en) Manufacture of semiconductor device
JPS5223265A (en) Method of processing semiconductor materials
JPS542658A (en) Semiconductor device and its manufacture
JPS5353263A (en) Manufacture of semiconductor element
JPS52117550A (en) Electrode formation method
JPS5231665A (en) Growing method of semiconductor crystal
JPS5283164A (en) Production of thin film semiconductor substrate
JPS5358978A (en) Growing method for crystal
JPS5389656A (en) Production of semiconductor device
JPS52113674A (en) Production of semiconductor element
JPS543478A (en) Manufacture of semiconductor device
JPS5243369A (en) Flat etching method for silicon