JPS53146300A - Production of silicon carbide substrate - Google Patents
Production of silicon carbide substrateInfo
- Publication number
- JPS53146300A JPS53146300A JP6248977A JP6248977A JPS53146300A JP S53146300 A JPS53146300 A JP S53146300A JP 6248977 A JP6248977 A JP 6248977A JP 6248977 A JP6248977 A JP 6248977A JP S53146300 A JPS53146300 A JP S53146300A
- Authority
- JP
- Japan
- Prior art keywords
- production
- silicon carbide
- carbide substrate
- sic
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
PURPOSE: To produce a SiC semiconductor material of large area with good reproducibility by coating the surface of a SiC thin film formed on a Si substrate with a metal or resin and removing the Si substrate by dissolution after which a SiC epitaxial layer is formed on the surface of the SiC thin film.
COPYRIGHT: (C)1978,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP6248977A JPS53146300A (en) | 1977-05-25 | 1977-05-25 | Production of silicon carbide substrate |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP6248977A JPS53146300A (en) | 1977-05-25 | 1977-05-25 | Production of silicon carbide substrate |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS53146300A true JPS53146300A (en) | 1978-12-20 |
Family
ID=13201627
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP6248977A Pending JPS53146300A (en) | 1977-05-25 | 1977-05-25 | Production of silicon carbide substrate |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS53146300A (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4983538A (en) * | 1987-11-20 | 1991-01-08 | Fujitsu Limited | Method for fabricating a silicon carbide substrate |
JP2002338395A (en) * | 2001-05-10 | 2002-11-27 | Hoya Corp | Compound crystal and method for producing the same |
CN103043606A (en) * | 2012-12-06 | 2013-04-17 | 中国电子科技集团公司第五十五研究所 | Method for machining large-size and high-depth-to-width ratio three-dimensional structure for SiC material |
WO2024029217A1 (en) * | 2022-08-03 | 2024-02-08 | 信越半導体株式会社 | Method for manufacturing 3c-sic laminated substrate, 3c-sic laminated substrate, and 3c-sic independent substrate |
-
1977
- 1977-05-25 JP JP6248977A patent/JPS53146300A/en active Pending
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4983538A (en) * | 1987-11-20 | 1991-01-08 | Fujitsu Limited | Method for fabricating a silicon carbide substrate |
JP2002338395A (en) * | 2001-05-10 | 2002-11-27 | Hoya Corp | Compound crystal and method for producing the same |
CN103043606A (en) * | 2012-12-06 | 2013-04-17 | 中国电子科技集团公司第五十五研究所 | Method for machining large-size and high-depth-to-width ratio three-dimensional structure for SiC material |
WO2024029217A1 (en) * | 2022-08-03 | 2024-02-08 | 信越半導体株式会社 | Method for manufacturing 3c-sic laminated substrate, 3c-sic laminated substrate, and 3c-sic independent substrate |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS57204133A (en) | Manufacture of semiconductor integrated circuit | |
JPS5320767A (en) | X-ray mask supporting underlayer and its production | |
JPS53146300A (en) | Production of silicon carbide substrate | |
JPS5247673A (en) | Process for production of silicon crystal film | |
JPS53108389A (en) | Manufacture for semiconductor device | |
JPS53149194A (en) | Coating method for graphite substrate with silicon carbide | |
JPS53146299A (en) | Production of silicon carbide substrate | |
JPS52117558A (en) | Soft x-ray exposure mask and its manufacturing method | |
JPS5381069A (en) | Production of susceptor in cvd device | |
JPS5512735A (en) | Semiconductor device | |
JPS52130575A (en) | Semiconductor device and its preparation | |
JPS543473A (en) | Manufacture of semiconductor device | |
JPS5353280A (en) | Manufacture for semiconductor device | |
JPS53139476A (en) | Manufacture of semiconductor device | |
JPS5223265A (en) | Method of processing semiconductor materials | |
JPS542658A (en) | Semiconductor device and its manufacture | |
JPS5353263A (en) | Manufacture of semiconductor element | |
JPS52117550A (en) | Electrode formation method | |
JPS5231665A (en) | Growing method of semiconductor crystal | |
JPS5283164A (en) | Production of thin film semiconductor substrate | |
JPS5358978A (en) | Growing method for crystal | |
JPS5389656A (en) | Production of semiconductor device | |
JPS52113674A (en) | Production of semiconductor element | |
JPS543478A (en) | Manufacture of semiconductor device | |
JPS5243369A (en) | Flat etching method for silicon |