JPS5381069A - Production of susceptor in cvd device - Google Patents

Production of susceptor in cvd device

Info

Publication number
JPS5381069A
JPS5381069A JP15653376A JP15653376A JPS5381069A JP S5381069 A JPS5381069 A JP S5381069A JP 15653376 A JP15653376 A JP 15653376A JP 15653376 A JP15653376 A JP 15653376A JP S5381069 A JPS5381069 A JP S5381069A
Authority
JP
Japan
Prior art keywords
susceptor
production
cvd device
sic
lapping
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP15653376A
Other languages
Japanese (ja)
Other versions
JPS5512733B2 (en
Inventor
Masashi Yamamoto
Takashi Naganuma
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP15653376A priority Critical patent/JPS5381069A/en
Publication of JPS5381069A publication Critical patent/JPS5381069A/en
Publication of JPS5512733B2 publication Critical patent/JPS5512733B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

PURPOSE: To produce a susceptor of an extremely flat surface by lapping the SiC layer on a C substrate with a SiC stock material, thereafter removing surface foreign matter through the use of a poly-Si film and covering the surface with SiC.
COPYRIGHT: (C)1978,JPO&Japio
JP15653376A 1976-12-27 1976-12-27 Production of susceptor in cvd device Granted JPS5381069A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15653376A JPS5381069A (en) 1976-12-27 1976-12-27 Production of susceptor in cvd device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15653376A JPS5381069A (en) 1976-12-27 1976-12-27 Production of susceptor in cvd device

Publications (2)

Publication Number Publication Date
JPS5381069A true JPS5381069A (en) 1978-07-18
JPS5512733B2 JPS5512733B2 (en) 1980-04-03

Family

ID=15629863

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15653376A Granted JPS5381069A (en) 1976-12-27 1976-12-27 Production of susceptor in cvd device

Country Status (1)

Country Link
JP (1) JPS5381069A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5670907U (en) * 1979-11-06 1981-06-11
JPS5987037A (en) * 1982-10-06 1984-05-19 ゼネラル・インスツルメント・コ−ポレ−シヨン Sensor element used in chemical vapor deposition process performed in radiant absorbing type heater system
US5119541A (en) * 1987-01-28 1992-06-09 Tadahiro Ohmi Wafer succeptor apparatus
CN111235633A (en) * 2020-01-16 2020-06-05 中国科学院半导体研究所 A method for preparing self-supporting silicon carbide wafers by CVD on the surface of silicon melt

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5670907U (en) * 1979-11-06 1981-06-11
JPS5987037A (en) * 1982-10-06 1984-05-19 ゼネラル・インスツルメント・コ−ポレ−シヨン Sensor element used in chemical vapor deposition process performed in radiant absorbing type heater system
US5119541A (en) * 1987-01-28 1992-06-09 Tadahiro Ohmi Wafer succeptor apparatus
WO1993013548A1 (en) * 1987-01-28 1993-07-08 Tadahiro Ohmi Wafer susceptor
CN111235633A (en) * 2020-01-16 2020-06-05 中国科学院半导体研究所 A method for preparing self-supporting silicon carbide wafers by CVD on the surface of silicon melt

Also Published As

Publication number Publication date
JPS5512733B2 (en) 1980-04-03

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