JPS55128865A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS55128865A
JPS55128865A JP3657679A JP3657679A JPS55128865A JP S55128865 A JPS55128865 A JP S55128865A JP 3657679 A JP3657679 A JP 3657679A JP 3657679 A JP3657679 A JP 3657679A JP S55128865 A JPS55128865 A JP S55128865A
Authority
JP
Japan
Prior art keywords
etched
readily
plasma
electrode
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP3657679A
Other languages
Japanese (ja)
Inventor
Shunji Otani
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Electric Industries Ltd
Original Assignee
Sumitomo Electric Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Electric Industries Ltd filed Critical Sumitomo Electric Industries Ltd
Priority to JP3657679A priority Critical patent/JPS55128865A/en
Publication of JPS55128865A publication Critical patent/JPS55128865A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE: To readily increase the frequency and density of a semiconductor device by forming Al-Ti layer architecture at an electrode to form readily a fine electrode by a plasma etching process.
CONSTITUTION: An n-type epitaxial layer 2 is selectively suerimposed on a semi- insulating GaAs substrate 1, the layers 2, 1 are selectively etched to form a mesa structure, source and drain electrode Au-Ga-Ni alloys 6 are selectively formed and heat treated. An aluminum layer 4 is then evaporated, coated with a resist mask 7 thereon, and plasma etched. The aluminum is etched with mixture gas of CCl4 and Ar, and Ti is etched with CF4. Then, the etching process can be readily controlled. Finally, the resist is plasma etched with O2. Since a gate electrode can be plasma etched readily to be finely fabricated with this process, it can increase the frequency characteristics of a semiconductor device. In addition, it has strong electromigration with Al-Ti layer architecture is not readily alloyed at low temperature. The Ti is very stable against GaAs with high adherence. Therefore, this device has high reliability.
COPYRIGHT: (C)1980,JPO&Japio
JP3657679A 1979-03-27 1979-03-27 Semiconductor device Pending JPS55128865A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3657679A JPS55128865A (en) 1979-03-27 1979-03-27 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3657679A JPS55128865A (en) 1979-03-27 1979-03-27 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS55128865A true JPS55128865A (en) 1980-10-06

Family

ID=12473586

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3657679A Pending JPS55128865A (en) 1979-03-27 1979-03-27 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS55128865A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03290931A (en) * 1990-04-06 1991-12-20 Matsushita Electron Corp Semiconductor device and its manufacture
DE19615663A1 (en) * 1995-07-27 1997-01-30 Mitsubishi Electric Corp Semiconductor device and method for its production
JP2015141979A (en) * 2014-01-28 2015-08-03 豊田合成株式会社 Semiconductor device manufacturing method and semiconductor device

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03290931A (en) * 1990-04-06 1991-12-20 Matsushita Electron Corp Semiconductor device and its manufacture
DE19615663A1 (en) * 1995-07-27 1997-01-30 Mitsubishi Electric Corp Semiconductor device and method for its production
US5777389A (en) * 1995-07-27 1998-07-07 Mitsubishi Denki Kabushiki Kaisha Semiconductor device including ohmic contact to-n-type GaAs
JP2015141979A (en) * 2014-01-28 2015-08-03 豊田合成株式会社 Semiconductor device manufacturing method and semiconductor device

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