JPS55128865A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS55128865A JPS55128865A JP3657679A JP3657679A JPS55128865A JP S55128865 A JPS55128865 A JP S55128865A JP 3657679 A JP3657679 A JP 3657679A JP 3657679 A JP3657679 A JP 3657679A JP S55128865 A JPS55128865 A JP S55128865A
- Authority
- JP
- Japan
- Prior art keywords
- etched
- readily
- plasma
- electrode
- semiconductor device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
PURPOSE: To readily increase the frequency and density of a semiconductor device by forming Al-Ti layer architecture at an electrode to form readily a fine electrode by a plasma etching process.
CONSTITUTION: An n-type epitaxial layer 2 is selectively suerimposed on a semi- insulating GaAs substrate 1, the layers 2, 1 are selectively etched to form a mesa structure, source and drain electrode Au-Ga-Ni alloys 6 are selectively formed and heat treated. An aluminum layer 4 is then evaporated, coated with a resist mask 7 thereon, and plasma etched. The aluminum is etched with mixture gas of CCl4 and Ar, and Ti is etched with CF4. Then, the etching process can be readily controlled. Finally, the resist is plasma etched with O2. Since a gate electrode can be plasma etched readily to be finely fabricated with this process, it can increase the frequency characteristics of a semiconductor device. In addition, it has strong electromigration with Al-Ti layer architecture is not readily alloyed at low temperature. The Ti is very stable against GaAs with high adherence. Therefore, this device has high reliability.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3657679A JPS55128865A (en) | 1979-03-27 | 1979-03-27 | Semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3657679A JPS55128865A (en) | 1979-03-27 | 1979-03-27 | Semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS55128865A true JPS55128865A (en) | 1980-10-06 |
Family
ID=12473586
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP3657679A Pending JPS55128865A (en) | 1979-03-27 | 1979-03-27 | Semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS55128865A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH03290931A (en) * | 1990-04-06 | 1991-12-20 | Matsushita Electron Corp | Semiconductor device and its manufacture |
DE19615663A1 (en) * | 1995-07-27 | 1997-01-30 | Mitsubishi Electric Corp | Semiconductor device and method for its production |
JP2015141979A (en) * | 2014-01-28 | 2015-08-03 | 豊田合成株式会社 | Semiconductor device manufacturing method and semiconductor device |
-
1979
- 1979-03-27 JP JP3657679A patent/JPS55128865A/en active Pending
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH03290931A (en) * | 1990-04-06 | 1991-12-20 | Matsushita Electron Corp | Semiconductor device and its manufacture |
DE19615663A1 (en) * | 1995-07-27 | 1997-01-30 | Mitsubishi Electric Corp | Semiconductor device and method for its production |
US5777389A (en) * | 1995-07-27 | 1998-07-07 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor device including ohmic contact to-n-type GaAs |
JP2015141979A (en) * | 2014-01-28 | 2015-08-03 | 豊田合成株式会社 | Semiconductor device manufacturing method and semiconductor device |
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