JPS5491068A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS5491068A
JPS5491068A JP15798577A JP15798577A JPS5491068A JP S5491068 A JPS5491068 A JP S5491068A JP 15798577 A JP15798577 A JP 15798577A JP 15798577 A JP15798577 A JP 15798577A JP S5491068 A JPS5491068 A JP S5491068A
Authority
JP
Japan
Prior art keywords
electrode
mask
layers
sio
gate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP15798577A
Other languages
Japanese (ja)
Inventor
Hidekazu Okabayashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP15798577A priority Critical patent/JPS5491068A/en
Publication of JPS5491068A publication Critical patent/JPS5491068A/en
Pending legal-status Critical Current

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  • Electrodes Of Semiconductors (AREA)

Abstract

PURPOSE: To manufacture a high-density IC by easily forming a canopy part of approximate 0.5μ to an electrode interval of 0.5μ when forming a gate electrode.
CONSTITUTION: On gate oxidized film 23, phosphorus-added poly-Si 24 is formed. Resist mask 25 is provided and layer 24 is plasma-etched to form gate electrode 241. At this time, the etching time is controlled to make a canopy with electrode 241 made narrower than mask 25. Next, n-type layers 27 and 28 are made through ion injection. Ion-irradiated SiO2 is etched faster and layers 27 and 28 can be exposed selectively, so that gate dielectric strength will improve. Next, double-layer film 29 of Ti and Mo is stuck. With mask 25 lifted off, electrodes 291 and 292 are made by self-matching. Next, electrode 241 is used as a mask for ion injection and projecting n-type layers 271 and 281 are formed through annealing. Lastly, unneeded parts of metal layers 291 and 292 on oxidized film 22 are removed and those metal layers are covered with SiO2 31. In this way, an IC of high density is formed.
COPYRIGHT: (C)1979,JPO&Japio
JP15798577A 1977-12-28 1977-12-28 Manufacture of semiconductor device Pending JPS5491068A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15798577A JPS5491068A (en) 1977-12-28 1977-12-28 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15798577A JPS5491068A (en) 1977-12-28 1977-12-28 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS5491068A true JPS5491068A (en) 1979-07-19

Family

ID=15661713

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15798577A Pending JPS5491068A (en) 1977-12-28 1977-12-28 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5491068A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5789255A (en) * 1980-11-25 1982-06-03 Nec Corp Manufacture of insulation gate type field effect transistor
JPS6313377A (en) * 1986-07-03 1988-01-20 Nec Corp Manufacture of ldd type field-effect transistor

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5789255A (en) * 1980-11-25 1982-06-03 Nec Corp Manufacture of insulation gate type field effect transistor
JPS6313377A (en) * 1986-07-03 1988-01-20 Nec Corp Manufacture of ldd type field-effect transistor

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