JPS5518055A - Method of fabricating semiconductor device - Google Patents
Method of fabricating semiconductor deviceInfo
- Publication number
- JPS5518055A JPS5518055A JP9108978A JP9108978A JPS5518055A JP S5518055 A JPS5518055 A JP S5518055A JP 9108978 A JP9108978 A JP 9108978A JP 9108978 A JP9108978 A JP 9108978A JP S5518055 A JPS5518055 A JP S5518055A
- Authority
- JP
- Japan
- Prior art keywords
- film
- layer
- mask
- etching
- coated
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Weting (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
PURPOSE: To obtain a gate electrode having equivalent length to the gate length on a photomask in a semiconductor device by side-etching a silicon nitride film at a photoetching step to thereby compensate the reduction in the gate length due to the side-etching of polycrystal silicon.
CONSTITUTION: A field insulating film 2 is formed on a semiconductor substrate 1, and a gate insulating film 3 is coated on the film 2, and a polycrystal silicon layer 4 is coated further on the film 3. A silicon nitride film 5 is further coated on the entire surface of the substrate. Photoresists 6 are formed on the portion except for the portion to become the gate electrode of the layer 4 to thereby etch the film 5 with the photoresists 6 as a mask. In this case, the side etching amount of the film 5 is equal to that of the layer 4. An oxide film 7 is formed with the film 5 as a mask. Then, the film 5 is removed to etch the layer 4 with the film 7 as a mask. In this case, the layer 4 is side-etched. Since the film 7 is formed longer in the amount to be etched as a mask, the layer 4 can be substantially equal in size to the photomask.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9108978A JPS5518055A (en) | 1978-07-25 | 1978-07-25 | Method of fabricating semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9108978A JPS5518055A (en) | 1978-07-25 | 1978-07-25 | Method of fabricating semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5518055A true JPS5518055A (en) | 1980-02-07 |
Family
ID=14016787
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP9108978A Pending JPS5518055A (en) | 1978-07-25 | 1978-07-25 | Method of fabricating semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5518055A (en) |
-
1978
- 1978-07-25 JP JP9108978A patent/JPS5518055A/en active Pending
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