JPS54148481A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS54148481A JPS54148481A JP5657178A JP5657178A JPS54148481A JP S54148481 A JPS54148481 A JP S54148481A JP 5657178 A JP5657178 A JP 5657178A JP 5657178 A JP5657178 A JP 5657178A JP S54148481 A JPS54148481 A JP S54148481A
- Authority
- JP
- Japan
- Prior art keywords
- film
- sio
- layer
- coated
- psg
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Formation Of Insulating Films (AREA)
Abstract
PURPOSE: To avoid the electric deterioration of the PN junction by limiting formation of the PSG film functioning as the 1st protective film of a high etching speed only on the N-type layer and avoiding etching the PSG film when the contact hole is formed.
CONSTITUTION: P+-type layer 1a is formed by diffusion on the surface of wafer 1 the N-type layer of which is epitaxial-grown on N+-type Si substrate, and then the entire surface of the wafer is covered with SiO2 film 2. An opening is drilled to dilm 2, and Si3N4 film 4a is coated over remaining film 2. Using film 4a as the mask, the mesa etching is applied to layer 1a and the epitaxial layer. And SiO2 film 2c protects the mesa-etched area. After this, PSG film 3 is coated only on the surface of film 2c plus coating of SiO2 film 4b. The contact hole is drilled to film 4a via the photolithography method. In such way, the hole is formed while film 3 is protected with film 4b, and electrode metal 5 is coated to the hole.
COPYRIGHT: (C)1979,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP5657178A JPS54148481A (en) | 1978-05-15 | 1978-05-15 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP5657178A JPS54148481A (en) | 1978-05-15 | 1978-05-15 | Manufacture of semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS54148481A true JPS54148481A (en) | 1979-11-20 |
Family
ID=13030819
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP5657178A Pending JPS54148481A (en) | 1978-05-15 | 1978-05-15 | Manufacture of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS54148481A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2009258721A (en) * | 2008-04-11 | 2009-11-05 | National Taiwan Univ Of Science & Technology | Illusionary light source device |
-
1978
- 1978-05-15 JP JP5657178A patent/JPS54148481A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2009258721A (en) * | 2008-04-11 | 2009-11-05 | National Taiwan Univ Of Science & Technology | Illusionary light source device |
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