JPS55128879A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS55128879A JPS55128879A JP3600579A JP3600579A JPS55128879A JP S55128879 A JPS55128879 A JP S55128879A JP 3600579 A JP3600579 A JP 3600579A JP 3600579 A JP3600579 A JP 3600579A JP S55128879 A JPS55128879 A JP S55128879A
- Authority
- JP
- Japan
- Prior art keywords
- film
- schottky barrier
- coated
- breakdown voltage
- barrier metal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Electrodes Of Semiconductors (AREA)
Abstract
PURPOSE: To enhance the breakdown voltage of a diode by forming a reverse diffused layer to a substrate around a mesa portion formed on the substrate and attaching a Schottky barrier metal to the top thereof.
CONSTITUTION: A p-type epitaxial layer 2 is superimposed on a p+-type silicon 1, and SiO2 film 6 and Si3N4 film 7 is laminated thereon. A resist mask is coated thereon, the films 7, 6 are sequentially etched to form an n-type layer 9 thereon, and pressed to the desired position under the film 6 by thermal diffusion process. A protective film 10 is selectively formed by oxidation to chemically mesa etch it. Thereafter, the film 10 is thermally oxidized, and a protective film 11 is coated thereon, an opening is perforated at the film 11, a Schottky barrier metal 4 is formed thereon. According to this configuration any capacity can be obtained and a Schottky barrier diode having high breakdown voltage can be provided.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3600579A JPS55128879A (en) | 1979-03-27 | 1979-03-27 | Semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3600579A JPS55128879A (en) | 1979-03-27 | 1979-03-27 | Semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS55128879A true JPS55128879A (en) | 1980-10-06 |
Family
ID=12457648
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP3600579A Pending JPS55128879A (en) | 1979-03-27 | 1979-03-27 | Semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS55128879A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4720734A (en) * | 1981-09-11 | 1988-01-19 | Nippon Telegraph And Telephone Public Corporation | Low loss and high speed diodes |
EP0712167A3 (en) * | 1994-11-11 | 1996-07-31 | Murata Manufacturing Co | Schottky barrier diode |
US5686753A (en) * | 1994-11-11 | 1997-11-11 | Murata Manufacturing Co., Ltd. | Schottky barrier diode having a mesa structure |
-
1979
- 1979-03-27 JP JP3600579A patent/JPS55128879A/en active Pending
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4720734A (en) * | 1981-09-11 | 1988-01-19 | Nippon Telegraph And Telephone Public Corporation | Low loss and high speed diodes |
EP0712167A3 (en) * | 1994-11-11 | 1996-07-31 | Murata Manufacturing Co | Schottky barrier diode |
US5686753A (en) * | 1994-11-11 | 1997-11-11 | Murata Manufacturing Co., Ltd. | Schottky barrier diode having a mesa structure |
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