JPS55128879A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS55128879A
JPS55128879A JP3600579A JP3600579A JPS55128879A JP S55128879 A JPS55128879 A JP S55128879A JP 3600579 A JP3600579 A JP 3600579A JP 3600579 A JP3600579 A JP 3600579A JP S55128879 A JPS55128879 A JP S55128879A
Authority
JP
Japan
Prior art keywords
film
schottky barrier
coated
breakdown voltage
barrier metal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP3600579A
Other languages
Japanese (ja)
Inventor
Shigenari Endo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP3600579A priority Critical patent/JPS55128879A/en
Publication of JPS55128879A publication Critical patent/JPS55128879A/en
Pending legal-status Critical Current

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  • Electrodes Of Semiconductors (AREA)

Abstract

PURPOSE: To enhance the breakdown voltage of a diode by forming a reverse diffused layer to a substrate around a mesa portion formed on the substrate and attaching a Schottky barrier metal to the top thereof.
CONSTITUTION: A p-type epitaxial layer 2 is superimposed on a p+-type silicon 1, and SiO2 film 6 and Si3N4 film 7 is laminated thereon. A resist mask is coated thereon, the films 7, 6 are sequentially etched to form an n-type layer 9 thereon, and pressed to the desired position under the film 6 by thermal diffusion process. A protective film 10 is selectively formed by oxidation to chemically mesa etch it. Thereafter, the film 10 is thermally oxidized, and a protective film 11 is coated thereon, an opening is perforated at the film 11, a Schottky barrier metal 4 is formed thereon. According to this configuration any capacity can be obtained and a Schottky barrier diode having high breakdown voltage can be provided.
COPYRIGHT: (C)1980,JPO&Japio
JP3600579A 1979-03-27 1979-03-27 Semiconductor device Pending JPS55128879A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3600579A JPS55128879A (en) 1979-03-27 1979-03-27 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3600579A JPS55128879A (en) 1979-03-27 1979-03-27 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS55128879A true JPS55128879A (en) 1980-10-06

Family

ID=12457648

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3600579A Pending JPS55128879A (en) 1979-03-27 1979-03-27 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS55128879A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4720734A (en) * 1981-09-11 1988-01-19 Nippon Telegraph And Telephone Public Corporation Low loss and high speed diodes
EP0712167A3 (en) * 1994-11-11 1996-07-31 Murata Manufacturing Co Schottky barrier diode
US5686753A (en) * 1994-11-11 1997-11-11 Murata Manufacturing Co., Ltd. Schottky barrier diode having a mesa structure

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4720734A (en) * 1981-09-11 1988-01-19 Nippon Telegraph And Telephone Public Corporation Low loss and high speed diodes
EP0712167A3 (en) * 1994-11-11 1996-07-31 Murata Manufacturing Co Schottky barrier diode
US5686753A (en) * 1994-11-11 1997-11-11 Murata Manufacturing Co., Ltd. Schottky barrier diode having a mesa structure

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