JPS6489359A - Manufacture of bipolar semiconductor integrated circuit device - Google Patents

Manufacture of bipolar semiconductor integrated circuit device

Info

Publication number
JPS6489359A
JPS6489359A JP62244742A JP24474287A JPS6489359A JP S6489359 A JPS6489359 A JP S6489359A JP 62244742 A JP62244742 A JP 62244742A JP 24474287 A JP24474287 A JP 24474287A JP S6489359 A JPS6489359 A JP S6489359A
Authority
JP
Japan
Prior art keywords
type
layer
region
base layer
manufacture
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62244742A
Other languages
Japanese (ja)
Inventor
Katsunori Tsuda
Kanji Yamamura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to JP62244742A priority Critical patent/JPS6489359A/en
Publication of JPS6489359A publication Critical patent/JPS6489359A/en
Pending legal-status Critical Current

Links

Landscapes

  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)

Abstract

PURPOSE:To easily reduce a pattern by retaining an Si nitride film remaining on an N<+> type emitter layer forming region also on a P<+> type isolation layer and an N<+> type collector layer forming regions, thereby forming the layers in a self-alignment. CONSTITUTION:Si nitride films 5, 5A remaining on a region to be formed with an N<+> type emitter layer and an N<+> type collector layer of I<2>L are retained also on regions to be formed with a P<+> type isolation layer, an N<+> type collector layer and the N<+> type color diffused layer of I<2>L, and selectively oxidized. A silicon nitride film 5B remains on a region to be formed with a P<+> type isolation layer is retained in the hole of a resist pattern 7, and patterned. The films 5B, 4 are etched to expose the Si. Si nitride films 5C, 5D and its base oxide film 4 are etched. An N<+> type collector layer 10 and the N<+> type color diffused layer 10A are formed from the surface on which Si is exposed. A P<+> type base layer 11, a P<-> type active base layer 12, a P<+> type external base layer 13 and a P<-> type active base layer 14 are formed on a region to be formed with a base layer.
JP62244742A 1987-09-29 1987-09-29 Manufacture of bipolar semiconductor integrated circuit device Pending JPS6489359A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62244742A JPS6489359A (en) 1987-09-29 1987-09-29 Manufacture of bipolar semiconductor integrated circuit device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62244742A JPS6489359A (en) 1987-09-29 1987-09-29 Manufacture of bipolar semiconductor integrated circuit device

Publications (1)

Publication Number Publication Date
JPS6489359A true JPS6489359A (en) 1989-04-03

Family

ID=17123216

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62244742A Pending JPS6489359A (en) 1987-09-29 1987-09-29 Manufacture of bipolar semiconductor integrated circuit device

Country Status (1)

Country Link
JP (1) JPS6489359A (en)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02305467A (en) * 1989-05-19 1990-12-19 Sanyo Electric Co Ltd Manufacture of semiconductor integrate circuit
JPH02305465A (en) * 1989-05-19 1990-12-19 Sanyo Electric Co Ltd Manufacture of semiconductor integrated circuit
JPH02305463A (en) * 1989-05-19 1990-12-19 Sanyo Electric Co Ltd Manufacture of semiconductor integrated circuit
JPH02305464A (en) * 1989-05-19 1990-12-19 Sanyo Electric Co Ltd Manufacture of semiconductor integrated circuit
JPH02305466A (en) * 1989-05-19 1990-12-19 Sanyo Electric Co Ltd Manufacture of semiconductor integrated circuit
JPH02305462A (en) * 1989-05-19 1990-12-19 Sanyo Electric Co Ltd Manufacture of semiconductor integrated circuit
JPH02305461A (en) * 1989-05-19 1990-12-19 Sanyo Electric Co Ltd Manufacture of semiconductor integrated circuit

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02305467A (en) * 1989-05-19 1990-12-19 Sanyo Electric Co Ltd Manufacture of semiconductor integrate circuit
JPH02305465A (en) * 1989-05-19 1990-12-19 Sanyo Electric Co Ltd Manufacture of semiconductor integrated circuit
JPH02305463A (en) * 1989-05-19 1990-12-19 Sanyo Electric Co Ltd Manufacture of semiconductor integrated circuit
JPH02305464A (en) * 1989-05-19 1990-12-19 Sanyo Electric Co Ltd Manufacture of semiconductor integrated circuit
JPH02305466A (en) * 1989-05-19 1990-12-19 Sanyo Electric Co Ltd Manufacture of semiconductor integrated circuit
JPH02305462A (en) * 1989-05-19 1990-12-19 Sanyo Electric Co Ltd Manufacture of semiconductor integrated circuit
JPH02305461A (en) * 1989-05-19 1990-12-19 Sanyo Electric Co Ltd Manufacture of semiconductor integrated circuit

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