JPS6489359A - Manufacture of bipolar semiconductor integrated circuit device - Google Patents
Manufacture of bipolar semiconductor integrated circuit deviceInfo
- Publication number
- JPS6489359A JPS6489359A JP62244742A JP24474287A JPS6489359A JP S6489359 A JPS6489359 A JP S6489359A JP 62244742 A JP62244742 A JP 62244742A JP 24474287 A JP24474287 A JP 24474287A JP S6489359 A JPS6489359 A JP S6489359A
- Authority
- JP
- Japan
- Prior art keywords
- type
- layer
- region
- base layer
- manufacture
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Bipolar Transistors (AREA)
- Bipolar Integrated Circuits (AREA)
Abstract
PURPOSE:To easily reduce a pattern by retaining an Si nitride film remaining on an N<+> type emitter layer forming region also on a P<+> type isolation layer and an N<+> type collector layer forming regions, thereby forming the layers in a self-alignment. CONSTITUTION:Si nitride films 5, 5A remaining on a region to be formed with an N<+> type emitter layer and an N<+> type collector layer of I<2>L are retained also on regions to be formed with a P<+> type isolation layer, an N<+> type collector layer and the N<+> type color diffused layer of I<2>L, and selectively oxidized. A silicon nitride film 5B remains on a region to be formed with a P<+> type isolation layer is retained in the hole of a resist pattern 7, and patterned. The films 5B, 4 are etched to expose the Si. Si nitride films 5C, 5D and its base oxide film 4 are etched. An N<+> type collector layer 10 and the N<+> type color diffused layer 10A are formed from the surface on which Si is exposed. A P<+> type base layer 11, a P<-> type active base layer 12, a P<+> type external base layer 13 and a P<-> type active base layer 14 are formed on a region to be formed with a base layer.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62244742A JPS6489359A (en) | 1987-09-29 | 1987-09-29 | Manufacture of bipolar semiconductor integrated circuit device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62244742A JPS6489359A (en) | 1987-09-29 | 1987-09-29 | Manufacture of bipolar semiconductor integrated circuit device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6489359A true JPS6489359A (en) | 1989-04-03 |
Family
ID=17123216
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP62244742A Pending JPS6489359A (en) | 1987-09-29 | 1987-09-29 | Manufacture of bipolar semiconductor integrated circuit device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6489359A (en) |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02305467A (en) * | 1989-05-19 | 1990-12-19 | Sanyo Electric Co Ltd | Manufacture of semiconductor integrate circuit |
JPH02305465A (en) * | 1989-05-19 | 1990-12-19 | Sanyo Electric Co Ltd | Manufacture of semiconductor integrated circuit |
JPH02305463A (en) * | 1989-05-19 | 1990-12-19 | Sanyo Electric Co Ltd | Manufacture of semiconductor integrated circuit |
JPH02305464A (en) * | 1989-05-19 | 1990-12-19 | Sanyo Electric Co Ltd | Manufacture of semiconductor integrated circuit |
JPH02305466A (en) * | 1989-05-19 | 1990-12-19 | Sanyo Electric Co Ltd | Manufacture of semiconductor integrated circuit |
JPH02305462A (en) * | 1989-05-19 | 1990-12-19 | Sanyo Electric Co Ltd | Manufacture of semiconductor integrated circuit |
JPH02305461A (en) * | 1989-05-19 | 1990-12-19 | Sanyo Electric Co Ltd | Manufacture of semiconductor integrated circuit |
-
1987
- 1987-09-29 JP JP62244742A patent/JPS6489359A/en active Pending
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02305467A (en) * | 1989-05-19 | 1990-12-19 | Sanyo Electric Co Ltd | Manufacture of semiconductor integrate circuit |
JPH02305465A (en) * | 1989-05-19 | 1990-12-19 | Sanyo Electric Co Ltd | Manufacture of semiconductor integrated circuit |
JPH02305463A (en) * | 1989-05-19 | 1990-12-19 | Sanyo Electric Co Ltd | Manufacture of semiconductor integrated circuit |
JPH02305464A (en) * | 1989-05-19 | 1990-12-19 | Sanyo Electric Co Ltd | Manufacture of semiconductor integrated circuit |
JPH02305466A (en) * | 1989-05-19 | 1990-12-19 | Sanyo Electric Co Ltd | Manufacture of semiconductor integrated circuit |
JPH02305462A (en) * | 1989-05-19 | 1990-12-19 | Sanyo Electric Co Ltd | Manufacture of semiconductor integrated circuit |
JPH02305461A (en) * | 1989-05-19 | 1990-12-19 | Sanyo Electric Co Ltd | Manufacture of semiconductor integrated circuit |
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