JPS6473767A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS6473767A JPS6473767A JP23131187A JP23131187A JPS6473767A JP S6473767 A JPS6473767 A JP S6473767A JP 23131187 A JP23131187 A JP 23131187A JP 23131187 A JP23131187 A JP 23131187A JP S6473767 A JPS6473767 A JP S6473767A
- Authority
- JP
- Japan
- Prior art keywords
- film
- base
- poly
- self
- collector
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Bipolar Transistors (AREA)
Abstract
PURPOSE:To make base resistance and base-collector capacity to be small for producing a high-density high-speed device by forming base and emitter regions with one mask matching using a self-alignment technology after forming collector region in a bipolar transistor. CONSTITUTION:An N-type Si substrate 1 is separated by an oxide film 2 as collector, poly Si3 and Si3N4 film 4 are superposed, a resist mask 5 is provided on it, dry etching is performed, and then an opening 6 is produced at the substrate 1. A mask 5 is removed and it is covered with a CVD-SiO2 film 7. A dry etching with high anisotropy is applied and CVD-SiO2 films 7a and 7b are left on the side surface of the opening 6 in self-alignment manner. A B-added poly Si 8 and a photoresist 9 are superposed on it. When the flat surface is etched and Si3N4 film 4 is exposed, only the film 7a is separated from the poly Si3 and the B-added poly Si 8a is left in self-alignment manner. A SiO2 film 10 and P<+> layer 11 are formed by heat oxidation and the Si3N4 film 4 is removed and B is added to the poly Si3 for diffusion to produce an active base 12 and an emitter 13. With this configuration, the base resistor and base collector capacity can be minimized.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP23131187A JPS6473767A (en) | 1987-09-16 | 1987-09-16 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP23131187A JPS6473767A (en) | 1987-09-16 | 1987-09-16 | Manufacture of semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6473767A true JPS6473767A (en) | 1989-03-20 |
Family
ID=16921639
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP23131187A Pending JPS6473767A (en) | 1987-09-16 | 1987-09-16 | Manufacture of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6473767A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100274604B1 (en) * | 1997-01-21 | 2001-01-15 | 윤종용 | Method for fabricating semiconductor device |
-
1987
- 1987-09-16 JP JP23131187A patent/JPS6473767A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100274604B1 (en) * | 1997-01-21 | 2001-01-15 | 윤종용 | Method for fabricating semiconductor device |
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