JPS55121675A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS55121675A
JPS55121675A JP2855979A JP2855979A JPS55121675A JP S55121675 A JPS55121675 A JP S55121675A JP 2855979 A JP2855979 A JP 2855979A JP 2855979 A JP2855979 A JP 2855979A JP S55121675 A JPS55121675 A JP S55121675A
Authority
JP
Japan
Prior art keywords
region
emitter
base
substrate
type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2855979A
Other languages
Japanese (ja)
Inventor
Osamu Hataishi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP2855979A priority Critical patent/JPS55121675A/en
Publication of JPS55121675A publication Critical patent/JPS55121675A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Bipolar Transistors (AREA)

Abstract

PURPOSE:To enhance the reliability of a bipolar transistor by eliminating the projection of an emitter region through a base region at the peripheral edges of the base and emitter regions. CONSTITUTION:A thick oxide film 11 is formed at the field portion of an n-type semiconductor substrate 10, and a thin oxide film 11' is formed at the other portion of the substrate 10. Then, a p-type base region 12 is formed on the substrate, and a negative resist pattern 16 is formed in an emitter contact opening. Thereafter, the film 11' is etched, and an n-type emitter region 17 is formed by an ion implantation process. When the emitter region 17 is thus formed, it can eliminate the projection of the emitter region 17 through the base region 12 to short with the collector region (semiconductor substrate).
JP2855979A 1979-03-12 1979-03-12 Manufacture of semiconductor device Pending JPS55121675A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2855979A JPS55121675A (en) 1979-03-12 1979-03-12 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2855979A JPS55121675A (en) 1979-03-12 1979-03-12 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS55121675A true JPS55121675A (en) 1980-09-18

Family

ID=12251994

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2855979A Pending JPS55121675A (en) 1979-03-12 1979-03-12 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS55121675A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59191372A (en) * 1983-04-14 1984-10-30 Nec Corp Semiconductor device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59191372A (en) * 1983-04-14 1984-10-30 Nec Corp Semiconductor device
JPH0425705B2 (en) * 1983-04-14 1992-05-01 Nippon Electric Co

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