JPS57115865A - Semiconductor integrated circuit - Google Patents
Semiconductor integrated circuitInfo
- Publication number
- JPS57115865A JPS57115865A JP196781A JP196781A JPS57115865A JP S57115865 A JPS57115865 A JP S57115865A JP 196781 A JP196781 A JP 196781A JP 196781 A JP196781 A JP 196781A JP S57115865 A JPS57115865 A JP S57115865A
- Authority
- JP
- Japan
- Prior art keywords
- type
- oxide film
- layer
- region
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 4
- 229910052681 coesite Inorganic materials 0.000 abstract 2
- 229910052906 cristobalite Inorganic materials 0.000 abstract 2
- 239000000377 silicon dioxide Substances 0.000 abstract 2
- 235000012239 silicon dioxide Nutrition 0.000 abstract 2
- 229910052682 stishovite Inorganic materials 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- 229910052905 tridymite Inorganic materials 0.000 abstract 2
- 229910052581 Si3N4 Inorganic materials 0.000 abstract 1
- 239000007792 gaseous phase Substances 0.000 abstract 1
- 238000010438 heat treatment Methods 0.000 abstract 1
- 238000009413 insulation Methods 0.000 abstract 1
- 238000005468 ion implantation Methods 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 229920002120 photoresistant polymer Polymers 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Bipolar Transistors (AREA)
Abstract
PURPOSE:To obtain a compact IC whose withstanding voltage between a collector and an emitter is high, by providin a thick oxide film among the electrode lead out regions for the emitter, a base, and the collector. CONSTITUTION:An N type layer 11 is epitaxially grown on a P type Si substrate 11' in which N<+> type embedded layer 11'' is provided. SiO2 film 13, 13', and 13'' are provided thereon by gaseous phase growth and a photoresist process and Si3N4 films 14, 14', and 14'' are likewise provided on said SiO2 layer. Then heat treatment is performed and a thick partial oxide film 15 is provided on a layer 11 which is exposed between said layered films. The layered film 13'' and 14'' are removed, and a P<+> type separating insulation region 12 reaching the substrate 11' is diffused and formed. Thereafter a P type base region 17 is formed by ion implantation with a resist film 16 as a mask. The layered films 13 and 14 on the central part are removed, and a thick partial oxide film 22 is formed on the removed parts. A thick oxide film 21 is also formed on the region 12. Then, as usual, a P<+> type base contact 18, an N<+> type collector contact 19, and an N<+> type emitter region 20 are provided.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP196781A JPS57115865A (en) | 1981-01-10 | 1981-01-10 | Semiconductor integrated circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP196781A JPS57115865A (en) | 1981-01-10 | 1981-01-10 | Semiconductor integrated circuit |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS57115865A true JPS57115865A (en) | 1982-07-19 |
Family
ID=11516346
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP196781A Pending JPS57115865A (en) | 1981-01-10 | 1981-01-10 | Semiconductor integrated circuit |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57115865A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63164463A (en) * | 1986-12-26 | 1988-07-07 | Fujitsu Ltd | Manufacture of semiconductor device |
-
1981
- 1981-01-10 JP JP196781A patent/JPS57115865A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63164463A (en) * | 1986-12-26 | 1988-07-07 | Fujitsu Ltd | Manufacture of semiconductor device |
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