JPS57112063A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS57112063A JPS57112063A JP18726580A JP18726580A JPS57112063A JP S57112063 A JPS57112063 A JP S57112063A JP 18726580 A JP18726580 A JP 18726580A JP 18726580 A JP18726580 A JP 18726580A JP S57112063 A JPS57112063 A JP S57112063A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- region
- forming
- oxide film
- base
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
- 230000015572 biosynthetic process Effects 0.000 abstract 2
- 238000005468 ion implantation Methods 0.000 abstract 1
- 150000004767 nitrides Chemical class 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Element Separation (AREA)
- Bipolar Transistors (AREA)
Abstract
PURPOSE:To reduce collector resistance and enhance a bipolar circuit in speed, by providing a protection film in a base region, forming a thick oxide film, removing the oxide film after forming a base layer, and forming a collector contact layer and an emitter layer at the same time. CONSTITUTION:An n<+>-buried layer is diffused on a p-substrate 1. A transistor formation region is established by growing an n-epitaxial layer 3 (1.5mum thick or so) and forming a p<+>-separated layer 4. Next, a protection layer 10 of nitride is provided on a base region. A selective oxide film 11 is thickly formed (1mum thick or so), and the protection layer 10 is removed. A p-base layer 7 is formed by ion implantation. Next, the oxide layer 11 in a collector contact formation region is removed. A resist mask is provided. An n<+> layer (0.3mum deep or so) is formed in a contact region 12 and an emitter region 8. This makes a high resistance region thinner by inroads of the oxide film 11 into the epitaxial layer 3. The decrease in collector resistance enhances the finely divided bipolar IC in speed.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18726580A JPS57112063A (en) | 1980-12-29 | 1980-12-29 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18726580A JPS57112063A (en) | 1980-12-29 | 1980-12-29 | Manufacture of semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS57112063A true JPS57112063A (en) | 1982-07-12 |
Family
ID=16202947
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP18726580A Pending JPS57112063A (en) | 1980-12-29 | 1980-12-29 | Manufacture of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57112063A (en) |
-
1980
- 1980-12-29 JP JP18726580A patent/JPS57112063A/en active Pending
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