JPS6425470A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS6425470A JPS6425470A JP18149887A JP18149887A JPS6425470A JP S6425470 A JPS6425470 A JP S6425470A JP 18149887 A JP18149887 A JP 18149887A JP 18149887 A JP18149887 A JP 18149887A JP S6425470 A JPS6425470 A JP S6425470A
- Authority
- JP
- Japan
- Prior art keywords
- film
- opening
- etched
- mask
- films
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Local Oxidation Of Silicon (AREA)
- Bipolar Transistors (AREA)
- Element Separation (AREA)
Abstract
PURPOSE:To obtain an excellent bipolar Tr having rare occurrence of crystal defect by filling a fusible insulating film in an opening. CONSTITUTION:A high concentration N<+> type buried layer 2, an N-type epitaxial layer 3 and an oxide film 4 are formed on a P-type semiconductor substrate 1. With a CVD-SiO2 film 5 as a mask a deep opening 6 is formed. The films 5, 4 between the base region and collector contact of a bipolar Tr, and on a field region are etched. Shallow openings 7a, 7b are formed on the layer 3. The films 5, 4 are removed, an oxide film 8 is formed on the whole surface to form a fusible insulating film 9. A resist film 10 is formed on the whole face, the film 10 on the Tr region is etched, and only the resist film on the opening 7b remains. With the film 10 as a mask the film 9 is etched. Accordingly, the film 9 remains only in the opening.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP18149887A JPS6425470A (en) | 1987-07-21 | 1987-07-21 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP18149887A JPS6425470A (en) | 1987-07-21 | 1987-07-21 | Manufacture of semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6425470A true JPS6425470A (en) | 1989-01-27 |
Family
ID=16101811
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP18149887A Pending JPS6425470A (en) | 1987-07-21 | 1987-07-21 | Manufacture of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6425470A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4988639A (en) * | 1988-09-28 | 1991-01-29 | Nec Corporation | Method of manufacturing semiconductor devices using trench isolation method that forms highly flat buried insulation film |
-
1987
- 1987-07-21 JP JP18149887A patent/JPS6425470A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4988639A (en) * | 1988-09-28 | 1991-01-29 | Nec Corporation | Method of manufacturing semiconductor devices using trench isolation method that forms highly flat buried insulation film |
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