JPS5595355A - Manufacture of semiconductor integrated circuit - Google Patents

Manufacture of semiconductor integrated circuit

Info

Publication number
JPS5595355A
JPS5595355A JP16325778A JP16325778A JPS5595355A JP S5595355 A JPS5595355 A JP S5595355A JP 16325778 A JP16325778 A JP 16325778A JP 16325778 A JP16325778 A JP 16325778A JP S5595355 A JPS5595355 A JP S5595355A
Authority
JP
Japan
Prior art keywords
film
collector
emitter
window
polycrystalline
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP16325778A
Other languages
Japanese (ja)
Other versions
JPS5721863B2 (en
Inventor
Yunosuke Kawabe
Yoshinobu Monma
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP16325778A priority Critical patent/JPS5595355A/en
Publication of JPS5595355A publication Critical patent/JPS5595355A/en
Publication of JPS5721863B2 publication Critical patent/JPS5721863B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/07—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
    • H01L27/0744—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common without components of the field effect type
    • H01L27/075—Bipolar transistors in combination with diodes, or capacitors, or resistors, e.g. lateral bipolar transistor, and vertical bipolar transistor and resistor
    • H01L27/0755—Vertical bipolar transistor in combination with diodes, or capacitors, or resistors
    • H01L27/0761—Vertical bipolar transistor in combination with diodes only
    • H01L27/0766—Vertical bipolar transistor in combination with diodes only with Schottky diodes only

Abstract

PURPOSE:To make loose pattern precision and positioning accuracy and simplify fabrication, by utilizing selective oxidization of polycrystalline Si film when a semiconductor integrated circuit, containing a Schottky barrier diode, is formed. CONSTITUTION:Base region 2 is formed by diffusion on Si substrate 1. By covering the entire surface with oxide film 3 and operating etching, collector window 4 and emitter window 6 are opened. Film 3 is made thin for base contact part 31 and Schottky barrier diode part 32. Next, polycrystalline Si film 33 is grown on the entire surface, and a nitride film is formed on the surface, and patterning is operated in accordance with collector part 12, emitter window part 14 and the Al wiring to be provided later. Subsequently, by heat treatment, only the exposed part of film 33 is converted into oxide film 34, and patterned nitride films 12 and 14 are peeled off, and film 33 is retained in accordance with collector electrode part 35, emitter electrode part 36 and inter-element wiring. Next, PSG film is fitted, and unneeded parts are removed; and by diffusing impurities in the film, collector and emitter regions 39 and 40 are formed.
JP16325778A 1978-12-25 1978-12-25 Manufacture of semiconductor integrated circuit Granted JPS5595355A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16325778A JPS5595355A (en) 1978-12-25 1978-12-25 Manufacture of semiconductor integrated circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16325778A JPS5595355A (en) 1978-12-25 1978-12-25 Manufacture of semiconductor integrated circuit

Publications (2)

Publication Number Publication Date
JPS5595355A true JPS5595355A (en) 1980-07-19
JPS5721863B2 JPS5721863B2 (en) 1982-05-10

Family

ID=15770349

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16325778A Granted JPS5595355A (en) 1978-12-25 1978-12-25 Manufacture of semiconductor integrated circuit

Country Status (1)

Country Link
JP (1) JPS5595355A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6110274A (en) * 1984-06-25 1986-01-17 Rohm Co Ltd Semiconductor device and manufacture thereof

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6110274A (en) * 1984-06-25 1986-01-17 Rohm Co Ltd Semiconductor device and manufacture thereof

Also Published As

Publication number Publication date
JPS5721863B2 (en) 1982-05-10

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