JPS5721863B2 - - Google Patents

Info

Publication number
JPS5721863B2
JPS5721863B2 JP16325778A JP16325778A JPS5721863B2 JP S5721863 B2 JPS5721863 B2 JP S5721863B2 JP 16325778 A JP16325778 A JP 16325778A JP 16325778 A JP16325778 A JP 16325778A JP S5721863 B2 JPS5721863 B2 JP S5721863B2
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP16325778A
Other languages
Japanese (ja)
Other versions
JPS5595355A (en
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP16325778A priority Critical patent/JPS5595355A/en
Publication of JPS5595355A publication Critical patent/JPS5595355A/en
Publication of JPS5721863B2 publication Critical patent/JPS5721863B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/07Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
    • H01L27/0744Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common without components of the field effect type
    • H01L27/075Bipolar transistors in combination with diodes, or capacitors, or resistors, e.g. lateral bipolar transistor, and vertical bipolar transistor and resistor
    • H01L27/0755Vertical bipolar transistor in combination with diodes, or capacitors, or resistors
    • H01L27/0761Vertical bipolar transistor in combination with diodes only
    • H01L27/0766Vertical bipolar transistor in combination with diodes only with Schottky diodes only

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)
JP16325778A 1978-12-25 1978-12-25 Manufacture of semiconductor integrated circuit Granted JPS5595355A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16325778A JPS5595355A (en) 1978-12-25 1978-12-25 Manufacture of semiconductor integrated circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16325778A JPS5595355A (en) 1978-12-25 1978-12-25 Manufacture of semiconductor integrated circuit

Publications (2)

Publication Number Publication Date
JPS5595355A JPS5595355A (en) 1980-07-19
JPS5721863B2 true JPS5721863B2 (en) 1982-05-10

Family

ID=15770349

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16325778A Granted JPS5595355A (en) 1978-12-25 1978-12-25 Manufacture of semiconductor integrated circuit

Country Status (1)

Country Link
JP (1) JPS5595355A (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6110274A (en) * 1984-06-25 1986-01-17 Rohm Co Ltd Semiconductor device and manufacture thereof

Also Published As

Publication number Publication date
JPS5595355A (en) 1980-07-19

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