JPS5586170A - Semiconductor light-receiving element - Google Patents
Semiconductor light-receiving elementInfo
- Publication number
- JPS5586170A JPS5586170A JP15848378A JP15848378A JPS5586170A JP S5586170 A JPS5586170 A JP S5586170A JP 15848378 A JP15848378 A JP 15848378A JP 15848378 A JP15848378 A JP 15848378A JP S5586170 A JPS5586170 A JP S5586170A
- Authority
- JP
- Japan
- Prior art keywords
- type
- grown
- substrate
- mesa type
- junction
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Light Receiving Elements (AREA)
Abstract
PURPOSE: To obtain an element easily without using diffusion by the method wherein an oxide film is fitted on a semiconductor substrate, a mesa type, inverted mesa type or rectangular type window is opened here, inside this is grown laminated epitaxial layers of conduction types same as and opposite to that of the substrate, and a pn-junction is produced.
CONSTITUTION: SiO2 film 4 is coated on n+-substrate 1 by the CDV method, and here is formed by photoetching a mesa type, inverted mesa type or rectangular type window. This can be easily accomplished if an etching solution and etching conditions are properly selected. Next, inside this is grown n-type layer 2 in liquid phase or gaseous phase epitaxial growth method, and on top of this is grown p+- type layer 3; and pn-junction is formed on the boundary of layers 2 and 3. By this, it is possible to obtain a planer element without operating selective diffusion, and further the occurrence of edge breakdown without curdling is prevented.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15848378A JPS5586170A (en) | 1978-12-25 | 1978-12-25 | Semiconductor light-receiving element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15848378A JPS5586170A (en) | 1978-12-25 | 1978-12-25 | Semiconductor light-receiving element |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5586170A true JPS5586170A (en) | 1980-06-28 |
Family
ID=15672716
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP15848378A Pending JPS5586170A (en) | 1978-12-25 | 1978-12-25 | Semiconductor light-receiving element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5586170A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58197782A (en) * | 1982-05-13 | 1983-11-17 | Fujitsu Ltd | Semiconductor light-receiving device |
| JPS6376383A (en) * | 1986-09-13 | 1988-04-06 | アルカテル・エヌ・ブイ | Avalanche photodiode |
| JPH01226174A (en) * | 1988-03-07 | 1989-09-08 | Nec Corp | Optoelectric integrated circuit |
| US5255225A (en) * | 1989-04-05 | 1993-10-19 | Hitachi, Ltd. | Semiconductor integrated circuit device and memory consisting of semiconductor integrated circuit |
| JP2007292226A (en) * | 2006-04-26 | 2007-11-08 | Aisan Ind Co Ltd | Fluid pressure restricting apparatus |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS49111593A (en) * | 1973-02-21 | 1974-10-24 |
-
1978
- 1978-12-25 JP JP15848378A patent/JPS5586170A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS49111593A (en) * | 1973-02-21 | 1974-10-24 |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58197782A (en) * | 1982-05-13 | 1983-11-17 | Fujitsu Ltd | Semiconductor light-receiving device |
| JPH0159747B2 (en) * | 1982-05-13 | 1989-12-19 | Fujitsu Ltd | |
| JPS6376383A (en) * | 1986-09-13 | 1988-04-06 | アルカテル・エヌ・ブイ | Avalanche photodiode |
| JPH01226174A (en) * | 1988-03-07 | 1989-09-08 | Nec Corp | Optoelectric integrated circuit |
| US5255225A (en) * | 1989-04-05 | 1993-10-19 | Hitachi, Ltd. | Semiconductor integrated circuit device and memory consisting of semiconductor integrated circuit |
| JP2007292226A (en) * | 2006-04-26 | 2007-11-08 | Aisan Ind Co Ltd | Fluid pressure restricting apparatus |
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