JPS57115875A - Semiconductor device and manufacture thereof - Google Patents
Semiconductor device and manufacture thereofInfo
- Publication number
- JPS57115875A JPS57115875A JP122481A JP122481A JPS57115875A JP S57115875 A JPS57115875 A JP S57115875A JP 122481 A JP122481 A JP 122481A JP 122481 A JP122481 A JP 122481A JP S57115875 A JPS57115875 A JP S57115875A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- film
- type
- region
- constitution
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title abstract 4
- 238000004519 manufacturing process Methods 0.000 title 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 230000004888 barrier function Effects 0.000 abstract 2
- 239000002184 metal Substances 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 239000013078 crystal Substances 0.000 abstract 1
- 230000003247 decreasing effect Effects 0.000 abstract 1
- 238000000151 deposition Methods 0.000 abstract 1
- 239000012535 impurity Substances 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/872—Schottky diodes
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
PURPOSE:To obtain a Schottky barrier diode having small series resistance, by forming a highly resistive semiconductor layer on the surface of a single crystal semiconductor substrate via a low resistance embedded layer, providing a low resistance region on the surface of a part thereof, epitaxially growing the highly resistive semiconductor layer on the surface of a part thereof again, and depositing a metal film thereon. CONSTITUTION:An N<-> type layer 3 is epitaxially grown on a P<-> type Si substrate 1 via an N<+> type embedded layer 2, and an SiO2 film 4 is deposited on the entire surface. Then a window is opened in a part of the film 4, and an N<+> type region 5 reaching the layer 2 is diffused and formed in the exposed layer 3. An N<-> type layer 6 is epitaxially grown only on the surface of the region 5 surrounded by the film 4. Thereafter, an Al metal film 7 is deposited on the layer 6 and edge part of the film 4, and Schottky barrier diode junction 8 is formed at the interface with the layer 6. In this constitution, each impurity concentration of the layers 6 and 5 are individually controlled, and the series resistance can be decreased without impairing the diode characteristics.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP122481A JPS57115875A (en) | 1981-01-09 | 1981-01-09 | Semiconductor device and manufacture thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP122481A JPS57115875A (en) | 1981-01-09 | 1981-01-09 | Semiconductor device and manufacture thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS57115875A true JPS57115875A (en) | 1982-07-19 |
Family
ID=11495490
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP122481A Pending JPS57115875A (en) | 1981-01-09 | 1981-01-09 | Semiconductor device and manufacture thereof |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57115875A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2014011175A (en) * | 2012-06-27 | 2014-01-20 | Canon Inc | Schottky barrier diode and device using the same |
| JP2017085184A (en) * | 2017-02-14 | 2017-05-18 | キヤノン株式会社 | Schottky barrier diode and device using the same |
-
1981
- 1981-01-09 JP JP122481A patent/JPS57115875A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2014011175A (en) * | 2012-06-27 | 2014-01-20 | Canon Inc | Schottky barrier diode and device using the same |
| US9553211B2 (en) | 2012-06-27 | 2017-01-24 | Canon Kabushiki Kaisha | Schottky barrier diode and apparatus using the same |
| JP2017085184A (en) * | 2017-02-14 | 2017-05-18 | キヤノン株式会社 | Schottky barrier diode and device using the same |
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