JPS5619679A - Schottky barrier type semiconductor device and manufacture thereof - Google Patents
Schottky barrier type semiconductor device and manufacture thereofInfo
- Publication number
- JPS5619679A JPS5619679A JP9422379A JP9422379A JPS5619679A JP S5619679 A JPS5619679 A JP S5619679A JP 9422379 A JP9422379 A JP 9422379A JP 9422379 A JP9422379 A JP 9422379A JP S5619679 A JPS5619679 A JP S5619679A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- film
- window
- platinum silicide
- deposited
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title abstract 3
- 230000004888 barrier function Effects 0.000 title abstract 2
- 238000004519 manufacturing process Methods 0.000 title 1
- ZXEYZECDXFPJRJ-UHFFFAOYSA-N $l^{3}-silane;platinum Chemical compound [SiH3].[Pt] ZXEYZECDXFPJRJ-UHFFFAOYSA-N 0.000 abstract 4
- 229910021339 platinum silicide Inorganic materials 0.000 abstract 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- QZPSXPBJTPJTSZ-UHFFFAOYSA-N aqua regia Chemical compound Cl.O[N+]([O-])=O QZPSXPBJTPJTSZ-UHFFFAOYSA-N 0.000 abstract 1
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 239000012535 impurity Substances 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 238000001259 photo etching Methods 0.000 abstract 1
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Substances [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 238000005245 sintering Methods 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/872—Schottky diodes
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
PURPOSE:To avoid the exposure of a semiconductor layer and to obtain the desired hight of the barrier by providing platinum silicide not only in a window but also on the insulating film around the window in the case the insulating film is deposited on the semiconductor layer, a window is opened, and a Schottky junction comprising a platinum silicide film is formed. CONSTITUTION:An N-type layer 12 is epitaxially grown on an N<+>-type Si substrate 11, and all the surface is covered by an SiO2 film 13. A window is opened and the layer 12 is exposed. Then, an Si layer 14 is grown on the surface including the window. Thereafter, said layer 14 is removed by photoetching, with only the side wall and the bottom of the wondow and the vicinity of the window being remained; and a Pt film 15 is deposited on all the surfaces. Then, sintering treatment is performed and the film 15 is reacted with the layer 14 with the layer 12 underneath said layer 14, and transformed into a platinum silicide film 16. Non- reacted film 15 is removed by using aqua regia. At this time, since a thin impurity layer 17 is formed on the film 16, the film 16 is not encroached. Then, an electrode 18 is deposited on all of the surface. In this method, the layer 12 is not exposed and the excellent Schottky junction of platinum silicide and Si can be obtained.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9422379A JPS5619679A (en) | 1979-07-26 | 1979-07-26 | Schottky barrier type semiconductor device and manufacture thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9422379A JPS5619679A (en) | 1979-07-26 | 1979-07-26 | Schottky barrier type semiconductor device and manufacture thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5619679A true JPS5619679A (en) | 1981-02-24 |
Family
ID=14104308
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP9422379A Pending JPS5619679A (en) | 1979-07-26 | 1979-07-26 | Schottky barrier type semiconductor device and manufacture thereof |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5619679A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5821382A (en) * | 1981-07-29 | 1983-02-08 | Toshiba Corp | Manufacture of schottky barrier diode |
-
1979
- 1979-07-26 JP JP9422379A patent/JPS5619679A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5821382A (en) * | 1981-07-29 | 1983-02-08 | Toshiba Corp | Manufacture of schottky barrier diode |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPS6410644A (en) | Manufacture of semiconductor device | |
| JPS5669844A (en) | Manufacture of semiconductor device | |
| JPS5619679A (en) | Schottky barrier type semiconductor device and manufacture thereof | |
| JPS55105344A (en) | Semiconductor device | |
| JPS5470776A (en) | Semiconductor device and its manufacture | |
| JPS5559759A (en) | Semiconductor device | |
| JPS54107279A (en) | Semiconductor device | |
| JPS572519A (en) | Manufacture of semiconductor device | |
| JPS5466780A (en) | Manufacture for semiconductor device | |
| JPS54139490A (en) | Semiconductor memory unit | |
| JPS54111792A (en) | Semiconductor device and its manufacture | |
| JPS57115875A (en) | Semiconductor device and manufacture thereof | |
| JPS55125626A (en) | Production of semiconductor device | |
| JPS55102269A (en) | Method of fabricating semiconductor device | |
| JPS5596669A (en) | Semiconductor device and method of fabricating the same | |
| JPS52138876A (en) | Production of semiconductor device | |
| JPS5749222A (en) | Manufacture of semiconductor device | |
| JPS6433964A (en) | Semiconductor device | |
| JPS55111129A (en) | Manufacturing method of semiconductor device | |
| JPS57201063A (en) | Manufacture of semiconductor device | |
| JPS5780776A (en) | Mos field effect semiconductor device and manufacture thereof | |
| JPS5478680A (en) | Semicondcutor device | |
| JPS57141967A (en) | Manufacture of semiconductor device | |
| JPS5561072A (en) | Manufacture of diffusion matching type mis ic device | |
| JPS5491185A (en) | Semiconductor divece |