JPS54111792A - Semiconductor device and its manufacture - Google Patents
Semiconductor device and its manufactureInfo
- Publication number
- JPS54111792A JPS54111792A JP1844378A JP1844378A JPS54111792A JP S54111792 A JPS54111792 A JP S54111792A JP 1844378 A JP1844378 A JP 1844378A JP 1844378 A JP1844378 A JP 1844378A JP S54111792 A JPS54111792 A JP S54111792A
- Authority
- JP
- Japan
- Prior art keywords
- film
- polycrystal
- impurity
- opening
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 6
- 239000012535 impurity Substances 0.000 abstract 5
- 239000000758 substrate Substances 0.000 abstract 4
- 229910052681 coesite Inorganic materials 0.000 abstract 3
- 229910052906 cristobalite Inorganic materials 0.000 abstract 3
- 239000000377 silicon dioxide Substances 0.000 abstract 3
- 235000012239 silicon dioxide Nutrition 0.000 abstract 3
- 229910052682 stishovite Inorganic materials 0.000 abstract 3
- 229910052905 tridymite Inorganic materials 0.000 abstract 3
- 238000009792 diffusion process Methods 0.000 abstract 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/0688—Integrated circuits having a three-dimensional layout
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Semiconductor Integrated Circuits (AREA)
Abstract
PURPOSE:To make smaller the device in size while simplifying the impurity diffusion process, by performing ohmic contact for the part of resistive element on the single crystal Si substrate surface and ohmic contact on the polycrystal Si wiring having high impurity concentration than the element for other part, in forming the resistive element with polycrystal Si including impurity. CONSTITUTION:The field SiO2 film 11 is coated on the surface of the Si substrate 10, opening the opening 12 being the electrode and the opening 13 being the MOS element forming region. Further, the gate SiO2 film 14 is coated in the opening 13 and the gate electrode and wiring and further the polycrystal Si film 15 for resistive element are grown on the full surface. After that, the impurity 16 of opposite conduction type as the substrate 10 is added to the full surface of the film 15, constituting the polycrystal Si 15' and the region 17 of opposite conduction type is caused in the substrate 10 at the same time. Next, unnecessary film 15' is removed, and the SiO2 film mask 18 is placed to the resistive element forming region, high concentration impurity 19 is diffused, the source and drain regions 20 and 21 are formed, and the film 15' is made to lower resistance.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1844378A JPS54111792A (en) | 1978-02-22 | 1978-02-22 | Semiconductor device and its manufacture |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1844378A JPS54111792A (en) | 1978-02-22 | 1978-02-22 | Semiconductor device and its manufacture |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS54111792A true JPS54111792A (en) | 1979-09-01 |
Family
ID=11971768
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1844378A Pending JPS54111792A (en) | 1978-02-22 | 1978-02-22 | Semiconductor device and its manufacture |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS54111792A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS583285A (en) * | 1981-06-30 | 1983-01-10 | Fujitsu Ltd | Device for protecting semiconductor integrated circuit |
| US4792841A (en) * | 1980-08-15 | 1988-12-20 | Hitachi, Ltd. | Semiconductor devices and a process for producing the same |
| US5111253A (en) * | 1989-05-09 | 1992-05-05 | General Electric Company | Multicellular FET having a Schottky diode merged therewith |
-
1978
- 1978-02-22 JP JP1844378A patent/JPS54111792A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4792841A (en) * | 1980-08-15 | 1988-12-20 | Hitachi, Ltd. | Semiconductor devices and a process for producing the same |
| JPS583285A (en) * | 1981-06-30 | 1983-01-10 | Fujitsu Ltd | Device for protecting semiconductor integrated circuit |
| US5111253A (en) * | 1989-05-09 | 1992-05-05 | General Electric Company | Multicellular FET having a Schottky diode merged therewith |
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