JPS5498581A - Manufacture of field effect transistor - Google Patents

Abstract

PURPOSE: To increase the frequency performance, by making gas phase growing the low impurity concentration layer of the same conduction type on the semiconductor substrate having high impurity concentration and of one conduction type, taking the high specific resistivity with the compensation of impurity of growing layer after forming the gate region of opposite conduction type on it, and by providing the source region here.

CONSTITUTION: The N type layer 2 is gas-phase-grown on the N² type semiconductor substrate 1 being the drain region, the P⁺ type gate region 3 is formed by diffusion by using mask, and the P tupe impurity is diffused fast in the diffusion speed by using the same mask, and the N^- type region 21 is caused in the layer 2 compensating the impurity of the layer 2. Thus, the region 21 easily extendable for the depletion layer is formed and the oxide film 5 is caoted on the entire surface. After that, open hole is placed on the film 5, the N⁺ type source region 4 is formed by diffusion, and the electrode 6 is attached at the rear side of the regions 3 and 4 and the substrate 1. Thus, without increasing the static capacitance between the gate and the drain, the resistance of the drain region can be less, the frequency performance can be made excellent and greater output can be made possible.

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