JPS5489477A - Production of semiconductor device - Google Patents

Production of semiconductor device

Info

Publication number
JPS5489477A
JPS5489477A JP15648577A JP15648577A JPS5489477A JP S5489477 A JPS5489477 A JP S5489477A JP 15648577 A JP15648577 A JP 15648577A JP 15648577 A JP15648577 A JP 15648577A JP S5489477 A JPS5489477 A JP S5489477A
Authority
JP
Japan
Prior art keywords
region
substrate
layer
furnace wall
type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP15648577A
Other languages
Japanese (ja)
Other versions
JPS6133262B2 (en
Inventor
Takeomi Takase
Yoichi Araki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP15648577A priority Critical patent/JPS5489477A/en
Publication of JPS5489477A publication Critical patent/JPS5489477A/en
Publication of JPS6133262B2 publication Critical patent/JPS6133262B2/ja
Granted legal-status Critical Current

Links

Abstract

PURPOSE: To obtain good non-rectifying contact by depositing an impurity metal of the same conductivity as that of electrode metal on the electrode forming regions of a semiconductor substrate, applying specified heat treatment then forming electrodes there.
CONSTITUTION: A P-type base region 3 is provided on one surface of an N- type Si substrate 1 and an N+ type collector connection region 2 on the other surface and an N+ type emitter region 4 is provided within the region 3 to provide an N+PN-N+ transistor. Next, a part of the region 4 and region 3 is exposed and other regions are covered with a SiO2 film 6, after which an Al layer 7 is evaporated over the entire surface. Next, the substrate 0 of this structure is put in a furnace 8 and vacuum of 10-4 to 10-6 Torr is formed therein, thence the substrate is heated for about 10 minutes with the furnace wall surface 81 to which the region 2 opposes being kept at 800°C and the furnace wall surface 82 to which the Al layer 7 opposes being kept at 750°C. Thereafter, the substrate 10 is turned over to interchange the faces to be opposed to the furnace wall and is heated in a similar manner. By this manner, a good non-rectifying contact layer 10 is producted on the surface layer part of the region 3 under the Al layer 7 and an Al electrode 9 is formed in the region 4.
COPYRIGHT: (C)1979,JPO&Japio
JP15648577A 1977-12-27 1977-12-27 Production of semiconductor device Granted JPS5489477A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15648577A JPS5489477A (en) 1977-12-27 1977-12-27 Production of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15648577A JPS5489477A (en) 1977-12-27 1977-12-27 Production of semiconductor device

Publications (2)

Publication Number Publication Date
JPS5489477A true JPS5489477A (en) 1979-07-16
JPS6133262B2 JPS6133262B2 (en) 1986-08-01

Family

ID=15628781

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15648577A Granted JPS5489477A (en) 1977-12-27 1977-12-27 Production of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5489477A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5753933A (en) * 1980-09-18 1982-03-31 Toshiba Corp Manufacture of semiconductor element

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5753933A (en) * 1980-09-18 1982-03-31 Toshiba Corp Manufacture of semiconductor element
JPH0214772B2 (en) * 1980-09-18 1990-04-10 Tokyo Shibaura Electric Co

Also Published As

Publication number Publication date
JPS6133262B2 (en) 1986-08-01

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