JPS5468174A - Manufacture for semiconductor device - Google Patents

Manufacture for semiconductor device

Info

Publication number
JPS5468174A
JPS5468174A JP13553577A JP13553577A JPS5468174A JP S5468174 A JPS5468174 A JP S5468174A JP 13553577 A JP13553577 A JP 13553577A JP 13553577 A JP13553577 A JP 13553577A JP S5468174 A JPS5468174 A JP S5468174A
Authority
JP
Japan
Prior art keywords
rear side
forming
low resistance
crystal substrate
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP13553577A
Other languages
Japanese (ja)
Other versions
JPS6040711B2 (en
Inventor
Gunji Mihashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP13553577A priority Critical patent/JPS6040711B2/en
Publication of JPS5468174A publication Critical patent/JPS5468174A/en
Publication of JPS6040711B2 publication Critical patent/JPS6040711B2/en
Expired legal-status Critical Current

Links

Landscapes

  • Bipolar Transistors (AREA)

Abstract

PURPOSE: To enable to establish the semiconductor of good yield rate and high reliability, by processing the rear side with thinner size, after forming the active region of the semiconductor device through the use of the comparatively thick semiconductor substrate.
CONSTITUTION: The base region 10 of transistor, emitter region 11, base electrode 14, and emitter electrode 13 and silicon oxide film 12 are formed on the surface of the silcon signal crystal substrate 9. Next, the rear side of the silicon signal crystal substrate 9 is removed by remaining a given thickness. After that, to improve the ohmic contact at the rear side. the impurity of the same conduction type is doped at the rear side by using ion injection method, forming the low resistance rate layer 15 with heat treatment of a low temperature. Further, the metallic film 16 is formed on the low resistance layer 15.
COPYRIGHT: (C)1979,JPO&Japio
JP13553577A 1977-11-10 1977-11-10 Manufacturing method of semiconductor device Expired JPS6040711B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13553577A JPS6040711B2 (en) 1977-11-10 1977-11-10 Manufacturing method of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13553577A JPS6040711B2 (en) 1977-11-10 1977-11-10 Manufacturing method of semiconductor device

Publications (2)

Publication Number Publication Date
JPS5468174A true JPS5468174A (en) 1979-06-01
JPS6040711B2 JPS6040711B2 (en) 1985-09-12

Family

ID=15154038

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13553577A Expired JPS6040711B2 (en) 1977-11-10 1977-11-10 Manufacturing method of semiconductor device

Country Status (1)

Country Link
JP (1) JPS6040711B2 (en)

Also Published As

Publication number Publication date
JPS6040711B2 (en) 1985-09-12

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