JPS5796567A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS5796567A
JPS5796567A JP17352480A JP17352480A JPS5796567A JP S5796567 A JPS5796567 A JP S5796567A JP 17352480 A JP17352480 A JP 17352480A JP 17352480 A JP17352480 A JP 17352480A JP S5796567 A JPS5796567 A JP S5796567A
Authority
JP
Japan
Prior art keywords
layer
type
impurity
high concentration
polycrystal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP17352480A
Other languages
Japanese (ja)
Inventor
Masaaki Ohira
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP17352480A priority Critical patent/JPS5796567A/en
Publication of JPS5796567A publication Critical patent/JPS5796567A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/225—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Bipolar Transistors (AREA)

Abstract

PURPOSE:To remove the strain of an emitter section, and to improve reliability by diffusing predetermined N type impurity having high concentration into a polycrystal Si layer and pushing in the impurity by using a prescribed temperature and an inert gas. CONSTITUTION:An N type C layer 2, thick Si oxide films 3a, 3a', a thin Si oxide film 3b, a nondoped polycrystal Si layer 6 and an emitter opening section A are formed onto a P type Si substrate 1. An N type high concentration impurity layer 8 is shaped by diffusing the N type impurity at 10<16>-10<22>ATM/cm<2> concentration from the opening section A. A glass layer 3c is formed at the same time. The glass layer is removed through etching, and the impurity is pushed into an N type high concentration impurity layer 7 by using the inert gas and the prescribed temperature, and pushed in up to predetermined depth. Accordingly, the generation of a crystal defect in the polycrystalline Si layer is controlled, and the bipolar type transistor having high reliability is obtained.
JP17352480A 1980-12-09 1980-12-09 Manufacture of semiconductor device Pending JPS5796567A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP17352480A JPS5796567A (en) 1980-12-09 1980-12-09 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP17352480A JPS5796567A (en) 1980-12-09 1980-12-09 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS5796567A true JPS5796567A (en) 1982-06-15

Family

ID=15962114

Family Applications (1)

Application Number Title Priority Date Filing Date
JP17352480A Pending JPS5796567A (en) 1980-12-09 1980-12-09 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5796567A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5856460A (en) * 1981-09-30 1983-04-04 Fujitsu Ltd Semiconductor device
JPS5946065A (en) * 1982-09-09 1984-03-15 Toshiba Corp Manufacture of semiconductor device

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5193674A (en) * 1975-02-14 1976-08-17
JPS5339061A (en) * 1976-09-22 1978-04-10 Nec Corp Production of semiconductor device
JPS54154271A (en) * 1978-05-25 1979-12-05 Nec Corp Manufacture of semiconductor device
JPS5530807A (en) * 1978-08-25 1980-03-04 Hitachi Ltd Producing method of semiconductor device
JPS5556151A (en) * 1978-10-20 1980-04-24 Mitsubishi Chem Ind Ltd Aromatic polyester polycarbonate resin composition
JPS5586151A (en) * 1978-12-23 1980-06-28 Chiyou Lsi Gijutsu Kenkyu Kumiai Manufacture of semiconductor integrated circuit

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5193674A (en) * 1975-02-14 1976-08-17
JPS5339061A (en) * 1976-09-22 1978-04-10 Nec Corp Production of semiconductor device
JPS54154271A (en) * 1978-05-25 1979-12-05 Nec Corp Manufacture of semiconductor device
JPS5530807A (en) * 1978-08-25 1980-03-04 Hitachi Ltd Producing method of semiconductor device
JPS5556151A (en) * 1978-10-20 1980-04-24 Mitsubishi Chem Ind Ltd Aromatic polyester polycarbonate resin composition
JPS5586151A (en) * 1978-12-23 1980-06-28 Chiyou Lsi Gijutsu Kenkyu Kumiai Manufacture of semiconductor integrated circuit

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5856460A (en) * 1981-09-30 1983-04-04 Fujitsu Ltd Semiconductor device
JPH0239091B2 (en) * 1981-09-30 1990-09-04 Fujitsu Ltd
JPS5946065A (en) * 1982-09-09 1984-03-15 Toshiba Corp Manufacture of semiconductor device
JPH0465528B2 (en) * 1982-09-09 1992-10-20 Tokyo Shibaura Electric Co

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