JPS56160065A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS56160065A JPS56160065A JP6446280A JP6446280A JPS56160065A JP S56160065 A JPS56160065 A JP S56160065A JP 6446280 A JP6446280 A JP 6446280A JP 6446280 A JP6446280 A JP 6446280A JP S56160065 A JPS56160065 A JP S56160065A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- oxide film
- base
- film layer
- emitter
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
- 239000012535 impurity Substances 0.000 abstract 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 3
- 230000015572 biosynthetic process Effects 0.000 abstract 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Bipolar Transistors (AREA)
Abstract
PURPOSE:To obtain a transistor excellent in a high harmonic wave characteristic which is shallow in the thickness of a base region, small in base resistance and high in withstand voltage by a method wherein impurities are introduced through a polycrystalline silicon. CONSTITUTION:After an oxide film layer 12 is formed on an N type single crystal silicon substrate 11 and formed a base window, P type impurities are heat-diffused through a polycrystalline layer 19 to form a base layer 13. Then, the polycrystalline silicon layer 19 at the part at which an emitter is formed is etched and a polycrystalline silicon layer 21 containing N type impurities is formed, after the formation of an oxide film layer 20. Subsequently, after the oxide film 20 is etched, the N type impurities are pressed-in and diffused to form an emitter layer 16 and an oxide film layer 22 is formed anew at the same time. Thereafter, the windows are formed at the parts where a base electrode and an emitter electrode are formed in the oxide film layer 22, and an electrode 18 is formed.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6446280A JPS56160065A (en) | 1980-05-15 | 1980-05-15 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6446280A JPS56160065A (en) | 1980-05-15 | 1980-05-15 | Manufacture of semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS56160065A true JPS56160065A (en) | 1981-12-09 |
Family
ID=13258919
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6446280A Pending JPS56160065A (en) | 1980-05-15 | 1980-05-15 | Manufacture of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS56160065A (en) |
-
1980
- 1980-05-15 JP JP6446280A patent/JPS56160065A/en active Pending
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