JPS5797674A - Manufacture of mos semiconductor device - Google Patents

Manufacture of mos semiconductor device

Info

Publication number
JPS5797674A
JPS5797674A JP17425380A JP17425380A JPS5797674A JP S5797674 A JPS5797674 A JP S5797674A JP 17425380 A JP17425380 A JP 17425380A JP 17425380 A JP17425380 A JP 17425380A JP S5797674 A JPS5797674 A JP S5797674A
Authority
JP
Japan
Prior art keywords
film
layer
field
oxidized
preventing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP17425380A
Other languages
Japanese (ja)
Inventor
Kenji Taniguchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP17425380A priority Critical patent/JPS5797674A/en
Publication of JPS5797674A publication Critical patent/JPS5797674A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Element Separation (AREA)

Abstract

PURPOSE:To improve the characteristics of an MOS semiconductor element by performing the formations of a field inversion preventing impurity layer and a punch-through preventing impurity layer in the same step, thereby simplifying the steps and suppressing the lateral diffusion of the field inversion preventing impurity. CONSTITUTION:After a field oxidized film 35 and a gate oxidized film 36 are formed on a p type silicon substrate 31, boron ions are, for example, injected in the amount of 7X10<11> pieces/cm<2> at 300keV, thereby forming a p<+> impurity layer 37 under the films 35 and the element forming region. Subsequently, a gate electrode formed of polycrystalline silicon film and an n<+> source and drain region formed of polycrystalline silicon film are formed on the film 36, an oxidized silicon film is accumulated on the overall surface, a contacting hole is opened, and a lead electrode is arranged. Accordingly, the layer 37 becomes an inversion preventing layer under the field oxidized film and becomes a punch-through preventing layer under the element forming region.
JP17425380A 1980-12-10 1980-12-10 Manufacture of mos semiconductor device Pending JPS5797674A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP17425380A JPS5797674A (en) 1980-12-10 1980-12-10 Manufacture of mos semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP17425380A JPS5797674A (en) 1980-12-10 1980-12-10 Manufacture of mos semiconductor device

Publications (1)

Publication Number Publication Date
JPS5797674A true JPS5797674A (en) 1982-06-17

Family

ID=15975388

Family Applications (1)

Application Number Title Priority Date Filing Date
JP17425380A Pending JPS5797674A (en) 1980-12-10 1980-12-10 Manufacture of mos semiconductor device

Country Status (1)

Country Link
JP (1) JPS5797674A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02177561A (en) * 1988-12-28 1990-07-10 Toshiba Corp Semiconductor non-volatile memory and manufacture thereof

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02177561A (en) * 1988-12-28 1990-07-10 Toshiba Corp Semiconductor non-volatile memory and manufacture thereof

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