JPS562666A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS562666A
JPS562666A JP7795179A JP7795179A JPS562666A JP S562666 A JPS562666 A JP S562666A JP 7795179 A JP7795179 A JP 7795179A JP 7795179 A JP7795179 A JP 7795179A JP S562666 A JPS562666 A JP S562666A
Authority
JP
Japan
Prior art keywords
film
giving
heat treatment
layer
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP7795179A
Other languages
Japanese (ja)
Inventor
Takeshi Matsuo
Hiroshi Iwai
Satoru Maeda
Hiroyuki Nihei
Takahiko Moriya
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CHIYOU LSI GIJUTSU KENKYU KUMIAI
CHO LSI GIJUTSU KENKYU KUMIAI
Original Assignee
CHIYOU LSI GIJUTSU KENKYU KUMIAI
CHO LSI GIJUTSU KENKYU KUMIAI
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by CHIYOU LSI GIJUTSU KENKYU KUMIAI, CHO LSI GIJUTSU KENKYU KUMIAI filed Critical CHIYOU LSI GIJUTSU KENKYU KUMIAI
Priority to JP7795179A priority Critical patent/JPS562666A/en
Publication of JPS562666A publication Critical patent/JPS562666A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

PURPOSE:To prevent deterioration of characteristics by doping an As having a sufficiently slow speed of diffusion on the first layer of polycrystalline Si electrode consisting a dynamic RAM and also by eliminating an excessive impurity diffusion on a substrate surface when forming the second gate oxidation film by giving a heat treatment. CONSTITUTION:A thick field oxidation film 12 is coated on a P-type Si substrate 11, thin gate oxidation films 131 and 132 are provided on the region surrounded by the said film 12 and on the whole surface of which a polycrystalline Si layer 14 containing an As is piled. Then an As glass film, which is used to prevent the dispertion of the As, is generated by giving a heat treatment in an oxidizing atmosphere, and oxidation speed is accelerated by diffusing an As in crystal grains. Then a capacitor electrode 141 and a gate electrode 142 of a transistor are obtained by giving a selective etching on the layer 14, and by using the said electrodes as masks, the exposed sections of films 131 and 132 are removed by etching. Then a heat treatment is given again and a thin second gate oxidation film 151 and 153 is formed on the surface of the substrate 11 and a thick first gate oxidation films 152 and 154 are formed on the electrodes 141 and 142 respectively.
JP7795179A 1979-06-20 1979-06-20 Manufacture of semiconductor device Pending JPS562666A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7795179A JPS562666A (en) 1979-06-20 1979-06-20 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7795179A JPS562666A (en) 1979-06-20 1979-06-20 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS562666A true JPS562666A (en) 1981-01-12

Family

ID=13648317

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7795179A Pending JPS562666A (en) 1979-06-20 1979-06-20 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS562666A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58156A (en) * 1981-06-25 1983-01-05 Tdk Corp Manufacture of thin-film structure for lead
JPS59183657U (en) * 1983-05-23 1984-12-06 東亜電波工業株式会社 Solution potentiometric measuring device
JPH0340558U (en) * 1989-08-31 1991-04-18

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58156A (en) * 1981-06-25 1983-01-05 Tdk Corp Manufacture of thin-film structure for lead
JPS59183657U (en) * 1983-05-23 1984-12-06 東亜電波工業株式会社 Solution potentiometric measuring device
JPH0340558U (en) * 1989-08-31 1991-04-18

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