JPS52129288A - Production of semiconductor integrated citrcuit - Google Patents

Production of semiconductor integrated citrcuit

Info

Publication number
JPS52129288A
JPS52129288A JP4585776A JP4585776A JPS52129288A JP S52129288 A JPS52129288 A JP S52129288A JP 4585776 A JP4585776 A JP 4585776A JP 4585776 A JP4585776 A JP 4585776A JP S52129288 A JPS52129288 A JP S52129288A
Authority
JP
Japan
Prior art keywords
citrcuit
production
semiconductor integrated
strentth
diffusing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP4585776A
Other languages
Japanese (ja)
Other versions
JPS59978B2 (en
Inventor
Tadaharu Tsuyuki
Teruaki Aoki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Priority to JP4585776A priority Critical patent/JPS59978B2/en
Publication of JPS52129288A publication Critical patent/JPS52129288A/en
Publication of JPS59978B2 publication Critical patent/JPS59978B2/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
    • H01L27/0641—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region without components of the field effect type
    • H01L27/0647—Bipolar transistors in combination with diodes, or capacitors, or resistors, e.g. vertical bipolar transistor and bipolar lateral transistor and resistor
    • H01L27/0652—Vertical bipolar transistor in combination with diodes, or capacitors, or resistors
    • H01L27/0658—Vertical bipolar transistor in combination with resistors or capacitors

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Bipolar Transistors (AREA)
  • Formation Of Insulating Films (AREA)
  • Bipolar Integrated Circuits (AREA)

Abstract

PURPOSE:To achieve the improvement in dielectric strentth, the prevention of inversion phenomenon on substrate surface and the reduction in leakage current by diffusing an impurity with a poly-Si layer containing O2 as a mask and using the diffused layer as a protecting film after the diffusion.
JP4585776A 1976-04-22 1976-04-22 Manufacturing method of semiconductor integrated circuit Expired JPS59978B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4585776A JPS59978B2 (en) 1976-04-22 1976-04-22 Manufacturing method of semiconductor integrated circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4585776A JPS59978B2 (en) 1976-04-22 1976-04-22 Manufacturing method of semiconductor integrated circuit

Publications (2)

Publication Number Publication Date
JPS52129288A true JPS52129288A (en) 1977-10-29
JPS59978B2 JPS59978B2 (en) 1984-01-10

Family

ID=12730867

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4585776A Expired JPS59978B2 (en) 1976-04-22 1976-04-22 Manufacturing method of semiconductor integrated circuit

Country Status (1)

Country Link
JP (1) JPS59978B2 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59182565A (en) * 1983-03-30 1984-10-17 エヌ・ベ−・フイリツプス・フル−イランペンフアブリケン Method of producing semiconductor device and semiconductor device
JPH057868U (en) * 1991-07-18 1993-02-02 彌壽夫 本屋 Ventilation window opening / closing device for membrane structure

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59182565A (en) * 1983-03-30 1984-10-17 エヌ・ベ−・フイリツプス・フル−イランペンフアブリケン Method of producing semiconductor device and semiconductor device
JPH0523054B2 (en) * 1983-03-30 1993-03-31 Fuiritsupusu Furuuiranpenfuaburiken Nv
JPH057868U (en) * 1991-07-18 1993-02-02 彌壽夫 本屋 Ventilation window opening / closing device for membrane structure

Also Published As

Publication number Publication date
JPS59978B2 (en) 1984-01-10

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