JPS5640276A - Preparation of semiconductor device - Google Patents
Preparation of semiconductor deviceInfo
- Publication number
- JPS5640276A JPS5640276A JP11646779A JP11646779A JPS5640276A JP S5640276 A JPS5640276 A JP S5640276A JP 11646779 A JP11646779 A JP 11646779A JP 11646779 A JP11646779 A JP 11646779A JP S5640276 A JPS5640276 A JP S5640276A
- Authority
- JP
- Japan
- Prior art keywords
- region
- window
- layer
- emitter
- base
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title abstract 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 8
- 229910052681 coesite Inorganic materials 0.000 abstract 4
- 229910052906 cristobalite Inorganic materials 0.000 abstract 4
- 239000000377 silicon dioxide Substances 0.000 abstract 4
- 235000012239 silicon dioxide Nutrition 0.000 abstract 4
- 229910052682 stishovite Inorganic materials 0.000 abstract 4
- 229910052905 tridymite Inorganic materials 0.000 abstract 4
- 238000009792 diffusion process Methods 0.000 abstract 3
- 239000012535 impurity Substances 0.000 abstract 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- 239000011248 coating agent Substances 0.000 abstract 1
- 238000000576 coating method Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Bipolar Transistors (AREA)
Abstract
PURPOSE:To prevent a short-circuit between the emitter and base of a semiconductor by coating the side surfaces of a polycrystalline Si layer containing impurities provided on a semiconductor substrate with a SiO2 film before forming an emitter region by using the Si layer as a diffusion source. CONSTITUTION:On an Si substrate 1, a shallow base region 2 and an annular deep graft-base region 3 surrounding the region 2 and contacting with its circumference are formed by diffusion. The whole surface is coated with an SiO2 film 4, and a window 5 for impurity diffusion is made corresponding to an emitter region 8 to be provided in the region 2. Then, in the window 5, a polycrystalline Si layer 6 containing impurities is formed covering the film 4 on the circumference of the window 5, and coated with a CVD SiO2 film 7. The whole surface including the film 7 is also coated with a CVD SiO2 film 13 to cover the side surface of the Si layer 6. At the same time, the inpurities in the Si layer 6 is diffused to produce an emitter region 8 in the region 2. A window 9 is made over the region 8, and a window 10 on the region 3. Then an emitter lead electrode 11 is provided in the window 9, and a base lead electrode 12 in the window 10.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11646779A JPS5640276A (en) | 1979-09-11 | 1979-09-11 | Preparation of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11646779A JPS5640276A (en) | 1979-09-11 | 1979-09-11 | Preparation of semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5640276A true JPS5640276A (en) | 1981-04-16 |
| JPS6346584B2 JPS6346584B2 (en) | 1988-09-16 |
Family
ID=14687818
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11646779A Granted JPS5640276A (en) | 1979-09-11 | 1979-09-11 | Preparation of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5640276A (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0455991U (en) * | 1990-09-19 | 1992-05-13 | ||
| JPH0455990U (en) * | 1990-09-19 | 1992-05-13 |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS504984A (en) * | 1973-05-16 | 1975-01-20 | ||
| JPS5010578A (en) * | 1973-05-24 | 1975-02-03 | ||
| JPS51130174A (en) * | 1975-05-06 | 1976-11-12 | Matsushita Electric Ind Co Ltd | Semiconductor device process |
| JPS5482177A (en) * | 1977-12-14 | 1979-06-30 | Nippon Telegr & Teleph Corp <Ntt> | Semiconductor device and its manufacture |
-
1979
- 1979-09-11 JP JP11646779A patent/JPS5640276A/en active Granted
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS504984A (en) * | 1973-05-16 | 1975-01-20 | ||
| JPS5010578A (en) * | 1973-05-24 | 1975-02-03 | ||
| JPS51130174A (en) * | 1975-05-06 | 1976-11-12 | Matsushita Electric Ind Co Ltd | Semiconductor device process |
| JPS5482177A (en) * | 1977-12-14 | 1979-06-30 | Nippon Telegr & Teleph Corp <Ntt> | Semiconductor device and its manufacture |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6346584B2 (en) | 1988-09-16 |
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