JPS57162460A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS57162460A
JPS57162460A JP4747181A JP4747181A JPS57162460A JP S57162460 A JPS57162460 A JP S57162460A JP 4747181 A JP4747181 A JP 4747181A JP 4747181 A JP4747181 A JP 4747181A JP S57162460 A JPS57162460 A JP S57162460A
Authority
JP
Japan
Prior art keywords
region
film
layer
type
emitter
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP4747181A
Other languages
Japanese (ja)
Other versions
JPH0420256B2 (en
Inventor
Katsuyuki Inayoshi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP4747181A priority Critical patent/JPS57162460A/en
Publication of JPS57162460A publication Critical patent/JPS57162460A/en
Publication of JPH0420256B2 publication Critical patent/JPH0420256B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals

Abstract

PURPOSE:To prevent surely short-circuit between an emitter and a base when the emitter region of a bipolar semiconductor device is to be formed by a method wherein after impurity ions are implanted from windows for emitter electrode through a thin insulating film, the thin film is removed by etching having the orientating property. CONSTITUTION:An n<+> type buried layer 8 is formed by diffusion in a p type Si substrate 7, an n type layer 1 to be made as the collector region is made to grow epitaxially on the whole surface containing the buried layer thereof, and the layer 1 is made to form an island type containing the layer 8 by the isolation region. Then a p<+> type base region 2 is formed by diffusion in the layer 1 formed in the island type, and an SiO2 film 6 is adhered on the whole surface containing the base region. After then, respective windows 10-12 for electrodes of emitter, collector contact, and base are formed in the film 6, and heat treatment is performed to make thin SiO2 films 5 to be generated in the windows thereof. Then the upper part of the window 12 is covered with a resist film 13, ions are implanted in the windows 10, 11 through the film 5 to provide the n<+> type emitter region 3 and the collector contact region 4 respectively in the region 2 and in the layer 1, and the film 5 made to be unnecessitated is removed in the etching device provided with the orientating property.
JP4747181A 1981-03-31 1981-03-31 Manufacture of semiconductor device Granted JPS57162460A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4747181A JPS57162460A (en) 1981-03-31 1981-03-31 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4747181A JPS57162460A (en) 1981-03-31 1981-03-31 Manufacture of semiconductor device

Publications (2)

Publication Number Publication Date
JPS57162460A true JPS57162460A (en) 1982-10-06
JPH0420256B2 JPH0420256B2 (en) 1992-04-02

Family

ID=12776052

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4747181A Granted JPS57162460A (en) 1981-03-31 1981-03-31 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS57162460A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS609163A (en) * 1983-06-29 1985-01-18 Fujitsu Ltd Manufacture of semiconductor device
JPS60119775A (en) * 1983-12-02 1985-06-27 Hitachi Ltd Manufacture of semiconductor device

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52117554A (en) * 1976-03-30 1977-10-03 Toshiba Corp Manufacturing method of semiconductor device
JPS54144176A (en) * 1978-05-01 1979-11-10 Ibm Method of forming semiconductor junction
JPS564268A (en) * 1979-06-22 1981-01-17 Ibm Method of forming semiconductor device
JPS56146274A (en) * 1980-03-24 1981-11-13 Ibm Method of manufacturing bipolar transistor

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52117554A (en) * 1976-03-30 1977-10-03 Toshiba Corp Manufacturing method of semiconductor device
JPS54144176A (en) * 1978-05-01 1979-11-10 Ibm Method of forming semiconductor junction
JPS564268A (en) * 1979-06-22 1981-01-17 Ibm Method of forming semiconductor device
JPS56146274A (en) * 1980-03-24 1981-11-13 Ibm Method of manufacturing bipolar transistor

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS609163A (en) * 1983-06-29 1985-01-18 Fujitsu Ltd Manufacture of semiconductor device
JPS60119775A (en) * 1983-12-02 1985-06-27 Hitachi Ltd Manufacture of semiconductor device
JPH0580818B2 (en) * 1983-12-02 1993-11-10 Hitachi Ltd

Also Published As

Publication number Publication date
JPH0420256B2 (en) 1992-04-02

Similar Documents

Publication Publication Date Title
JPS56115525A (en) Manufacture of semiconductor device
JPS5758356A (en) Manufacture of semiconductor device
KR890005884A (en) Manufacturing method of bipolar transistor
JPS57162460A (en) Manufacture of semiconductor device
JPS54154967A (en) Semiconductor electronic device
JPS5642367A (en) Manufacture of bipolar integrated circuit
JPS55107229A (en) Method of manufacturing semiconductor device
JPS57133626A (en) Manufacture of semiconductor thin film
RU845678C (en) Method of manufacturing hf p- &amp;&amp;&amp; -p transistors
JPS5856460A (en) Semiconductor device
KR890005885A (en) Manufacturing method of bipolar transistor
JPS5693315A (en) Manufacture of semiconductor device
JPS57180144A (en) Manufacture of semiconductor device
JPS57192073A (en) Semiconductor device
JPS55133556A (en) Planar semiconductor device and method of fabricating the same
JPS56142650A (en) Semiconductor device and manufacture thereof
JPS6449270A (en) Manufacture of semiconductor device
JPS57136359A (en) Manufacture of semiconductor integrated circuit
JPS57173956A (en) Manufacture of semiconductor device
JPS57133672A (en) Semiconductor device
JPS57126170A (en) Semiconductor constant voltage device
JPS5796567A (en) Manufacture of semiconductor device
JPS5954222A (en) Manufacture of semiconductor device
JPS57103328A (en) Semiconductor and manufacture thereof
JPS645066A (en) Manufacture of field effect transistor